DMTH10H010SPS Green 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features RDS(ON) Max ID TC = +25°C 8.8mΩ @ VGS = 10V 123A 11.5mΩ @ VGS = 6V 108A BVDSS 100V Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures more reliable and robust end application Low RDS(ON) – Minimizes On-State Losses Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.097 grams (Approximate) performance. This device is ideal for use in notebook battery power management and load switch. Applications ® Motor Control DC-DC Converters Power Management D PowerDI5060-8 Pin1 G S D S D S D G D S Top View Top View Pin Configuration Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMTH10H010SPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information D D D D TH10H010S YY WW S S S = Manufacturer’s Marking TH10H010S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) G PowerDI is a registered trademark of Diodes Incorporated. DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 1 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +100°C TC = +25°C TC = +100°C Continuous Drain Current, VGS = 10V (Note 5) Continuous Drain Current, VGS = 10V (Note 6) ID Unit V V A 123 87 250 100 33.7 170 14.3 307 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current Avalanche Current, L = 0.3mH Avalanche Energy, L = 0.3mH Avalanche Current (Note 7), L = 3mH Avalanche Energy (Note 7), L = 3mH Value 100 ±20 11.8 8.3 IDM IS IAS EAS IAS EAS A A A A mJ A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJC TJ, TSTG TA = +25°C TC = +25°C Value 1.5 99 166 0.9 -55 to +175 Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD — 6.6 8.5 0.8 4 8.8 11.5 1.3 V Static Drain-Source On-Resistance 2 — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 13A VGS = 6V, ID = 13A VGS = 0V, IS = 13A CISS COSS CRSS RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 4,468 746 32 0.91 56.4 15.4 14 18.6 22.5 44.8 29.5 54.5 106.4 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 13A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω ns nC IF = 13A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 2 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010SPS 30.0 30 VGS = 5.0V 25 VGS = 4.5V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 6.0V 25.0 VGS = 10.0V 15.0 10.0 VGS = 4.0V 5.0 VGS = 3.4V 15 125℃ 10 85℃ 175℃ 5 VGS = 3.8V VGS = 3.5V 20 25℃ 150℃ -55℃ 0.0 0 0.5 1 1.5 2 2.5 3 1 8 7 6 VGS = 10V 5 4 3 0 5 10 15 20 45 40 35 30 25 20 15 ID = 13A 10 5 0 VGS = 10V 16 175℃ 150℃ 12 10 125℃ 8 85℃ 6 25℃ -55℃ 2 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 20 6 50 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 VGS, GATE-SOURCE VOLTAGE (V) VGS = 6V 4 4 Figure 2. Typical Transfer Characteristic 9 14 3 VDS, DRAIN-SOURCE VOLTAGE (V) 10 18 2 Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 0 3 of 7 www.diodes.com 2.5 2.3 2.1 VGS = 10V, ID = 13A 1.9 1.7 1.5 1.3 1.1 VGS = 6.0V, ID = 13A 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature August 2017 © Diodes Incorporated 0.018 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMTH10H010SPS 0.015 VGS = 6.0V, ID = 13A 0.012 0.009 0.006 VGS = 10V, ID = 13A 0.003 0 -50 -25 0 25 50 75 4 3.5 3 ID = 1mA 2.5 2 ID = 250μA 1.5 1 0.5 0 100 125 150 175 -50 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 30 10000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) -25 20 15 TJ = 85oC 10 TJ = 175oC TJ = 25oC TJ = 150oC 5 TJ = 125oC Ciss 1000 Coss 100 Crss 10 TJ = -55oC 1 0 0 0.3 0.6 0.9 1.2 0 1.5 10 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 20 30 40 50 60 70 90 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 1000 RDS(ON) Limited 8 PW = 1µs 100 ID, DRAIN CURRENT (A) VGS (V) 80 6 4 VDS = 50V, ID = 13A 2 10 0 10 20 30 40 50 60 Qg (nC) Figure 11. Gate Charge DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 PW = 100µs PW = 1ms PW = 10ms 1 PW = 100ms 0.1 0.01 0 PW = 10µs TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 0.1 1 10 PW = 1s 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010SPS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC = 1.2℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 5 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010SPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 August 2017 © Diodes Incorporated DMTH10H010SPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMTH10H010SPS Document number: DS39423 Rev. 2 - 2 7 of 7 www.diodes.com August 2017 © Diodes Incorporated