ON MCH6541-TL-E Bipolar transistor (-)30v, (-)3a, low vce(sat) complementary dual mcph6 Datasheet

Ordering number : EN8949A
MCH6541
Bipolar Transistor
http://onsemi.com
(–)30V, (–)3A, Low VCE(sat) Complementary Dual MCPH6
Applicaitons
•
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers
Features
•
•
Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density
mounting
Ultrasmall package permitting applied sets to be small and slim
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Total Power Dissipation
Ratings
Unit
(--30)40
V
(--)30
V
VEBO
IC
(--)5
ICP
PC
Collector Dissipation
Conditions
VCBO
VCEO
Junction Temperature
PT
Tj
Storage Temperature
Tstg
(--)700
When mounted on ceramic substrate (600mm2×0.8mm) 1unit
When mounted on ceramic substrate (600mm2×0.8mm)
V
mA
(--)3
A
0.5
W
0.55
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-012
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
0 to 0.02
1
2
EP
TL
3
0.65
Marking
LOT No.
0.3
Electrical Connection
0.85
0.25
Packing Type : TL
4
LOT No.
0.07
MCH6541-TL-E
0.15
2.1
1.6
0.25
2.0
1
2
3
1 : Emitter1 (PNP TR)
2 : Base1 (PNP TR)
3 : Collector2 (NPN TR)
4 : Emitter2 (NPN TR)
5 : Base2 (NPN TR)
6 : Collector1 (PNP TR)
6
5
4
MCPH6
Semiconductor Components Industries, LLC, 2013
September, 2013
6
5
4
1
2
3
92612 TKIM/22008EA TIIM TC-00001087 No.8949-1/8
MCH6541
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
Ratings
min
typ
max
ICBO
IEBO
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
hFE
fT
VCE=(--)2V, IC=(--10)50mA
Gain-Bandwidth Product
VCE=(--)2V, IC=(--)50mA
(520)540
Output Capacitance
Cob
(4.7)3.3
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=(--)10V, f=1MHz
IC=(--)200mA, IB=(--)10mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
(200)300
IC=(--)200mA, IB=(--)10mA
V(BR)CBO
V(BR)CEO
IC=(--)10μA, IE=0A
V(BR)EBO
ton
tstg
tf
See specified Test Circuit.
Unit
(--)100
nA
(--)100
nA
(500)800
MHz
pF
(--110)85
(--220)190
(--)0.9
(--)1.2
mV
V
(--30)40
V
IC=(--)1mA, RBE=∞
(--)30
V
IE=(--)10μA, IC=0A
(--)5
V
35
ns
(125)255
ns
(25)40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=12V
IC=20IB1= --20IB2=300mA
For PNP, the polarity is reversed.
Ordering Information
Device
MCH6541-TL-E
Package
Shipping
memo
MCPH6
3,000pcs./reel
Pb Free
No.8949-2/8
MCH6541
[PNP]
--400
--1mA
--200
--500μA
[NPN]
7mA
A
5mA
3mA
30m
500
10m
15m
A 20mA
600
--3mA
--2mA
--300
IC -- VCE
700
A
A
--20m
A
--15m
A
--10m
A
--7m
--5mA
2mA
400
1mA
A
0
--3
mA
--25
Collector Current, IC -- mA
-mA 40mA
--500
--50
Collector Current, IC -- mA
--600
mA
300
50m
IC -- VCE
--700
400μA
200
200μA
100
--100
0
0
IB=0μA
0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV
IC -- VBE
--800
IB=0μA
100
200
300
400
500
600
700
Collector-to-Emitter Voltage, VCE -- mV
IT05049
[PNP]
IC -- VBE
800
[NPN]
--500
--400
--300
--200
600
500
400
--25°C
--600
Ta=7
5°C
25°C
Collector Current, IC -- mA
700
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- mA
--700
1000
IT05082
VCE=2V
VCE= --2V
300
200
100
--100
0
0
--0.2
0
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
0
--1.2
[PNP]
DC Current Gain, hFE
--25°C
2
100
0.8
1.0
IT05083
[NPN]
VCE=2V
Ta=75°C
7
3
0.6
hFE -- IC
1000
Ta=75°C
25°C
5
0.4
Base-to-Emitter Voltage, VBE -- V
VCE= --2V
7
0.2
IT05050
hFE -- IC
1000
DC Current Gain, hFE
900
800
25°C
5
--25°C
3
2
7
5
3
--1.0
2
3
5 7 --10
3
2
5 7 --100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
--100
7
5°C
7
Ta=
5°C
--2
5°C
3
2
2
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05054
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
[PNP]
IC / IB=20
7
5
100
1.0
5 7--1000
IT05051
VCE(sat) -- IC
1000
7
5
5 7 1000
IT05084
[NPN]
IC / IB=20
3
2
100
7
5
°C
75
5°C
3
2
2
Ta=
5
--2
°C
10
7
5
3
2
1.0
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05085
No.8949-3/8
MCH6541
VCE(sat) -- IC
3
[PNP]
--1000
7
5
3
2
5°C
--100
7
7
Ta=
5°C
--2
5
3
C
25°
2
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
VBE(sat) -- IC
--10
[PNP]
2
Ta= --25°C
75°C
5
25°C
3
2
--0.1
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Cob -- VCB
10
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
3
2
5
7
--10
2
2
3
5 7 100
2
IT05053
f T -- IC
[PNP]
[NPN]
IC / IB=20
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
2
5 7 10
3
2
3
5 7 100
2
[NPN]
f=1MHz
7
5
3
2
2
3
5
7
10
2
3
2
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05052
3
Collector-to-Base Voltage, VCB -- V
5
IT05088
fT -- IC
1000
Gain-Bandwidth Product, fT -- MHz
Gain-Bandwidth Product, f T -- MHz
5
5 7 1000
IT05087
3
Cob -- VCB
[NPN]
VCE=10V
VCE= --10V
7
5 7 1000
3
IT05086
VBE(sat) -- IC
1.0
1.0
5
3
Collector-to-Base Voltage, VCB -- V
1000
5 7 10
3
10
5
3
2
[PNP]
7
2
3
Collector Current, IC -- mA
f=1MHz
0.1
--1.0
°C
25
5°C
--2
=
Ta
2
0.1
1.0
5 7--1000
IT05056
Collector Current, IC -- mA
°C
7
5
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
7
75
100
7
5
--1.0
3
2
Collector Current, IC -- mA
IC / IB=20
7
5
10
1.0
5 7--1000
IT05055
Collector Current, IC -- mA
[NPN]
IC / IB=50
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
VCE(sat) -- IC
1000
IC / IB=50
7
5
3
2
100
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05089
No.8949-4/8
MCH6541
Ron -- IB
100
7
5
f=1MHz
7
OUT
1kΩ
2
IB
10
7
5
3
2
1.0
7
5
3
[NPN]
1kΩ
f=1MHz
OUT
IN
1kΩ
5
ON Resistance, Ron -- Ω
ON Resistance, Ron -- Ω
10
IN
3
Ron -- IB
[PNP]
1kΩ
3
IB
2
1.0
7
5
3
2
2
0.1
--0.1
2
3
5
7
2
--1.0
3
Base Current, IB -- mA
PD -- Ta
Allowable Power Dissipation, PD -- W
0.6
5
7
--10
IT06403
0.1
0.1
2
3
5
7
1.0
2
Base Current, IB -- mA
3
5
7
10
IT06793
[PNP/NPN]
When mounted on ceramic substrate
(600mm2✕0.8mm)
0.55
0.5
0.4
To
t
0.3
1u
al
ni
di
t
ss
ip
at
io
n
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10744
No.8949-5/8
MCH6541
Embossed Taping Specification
MCH6541-TL-E
No.8949-6/8
MCH6541
Outline Drawing
MCH6541-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.8949-7/8
MCH6541
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PS No.8949-8/8
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