MCC MCU20N06 N-channel enhancement mode field effect transistor Datasheet

MCC
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Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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MCU20N06
Features
•
•
•
•
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Halogen free available upon request by adding suffix "-HF"
Excellent package for good heat dissipation
•
Special process technology for high ESD capability
•
Epoxy meets UL 94 V-0 flammability rating
•
Moisture Sensitivity Level 1
N-Channel
Enhancement Mode
Field Effect Transistor
DPAK
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
EAS
J
Parameter
Drain-source Voltage
Drain Current-Continuous
Single Pulsed Avalanche Energy(note1)
Rating
60
20
VGS
Gate-source Voltage
f20
V
IDM
Pulsed Drain Current
60
A
Thermal Resistance Junction to Ambient
100
к/W
R©JA
72
Operating Junction Temperature
-55 to +150
к
TSTG
Storage Temperature
-55 to +150
к
TL
Maximum lead temperure for soldering
purposes,1/8" from case for 5 seconds
TJ
260
H
Unit
V
A
mJ
1
C
O
2
F
4
E
I
3
M
V
K
к
G
Internal Block Diagram
Q
A
D
L
D
B
1.GATE
2.DRAIN
3.SOURCE
DIMENSIONS
G
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
S
INCHES
MIN
MAX
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.023
0.256
0.264
0.201
0.215
0.190
0.236
0.244
0.086
0.094
0.386
0.409
0.114
0.055
0.067
0.063
0.043
0.051
0.000
0.012
0.211
MM
MIN
2.20
0.00
0.66
0.46
6.50
5.10
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
4.83
6.00
2.18
9.80
6.20
2.39
10.40
2.90
1.40
1.70
1.60
1.10
1.30
0.00
0.30
5.35
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Micro Commercial Components
Electrical characteristics (Ta=25
unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS=60V, VGS =0V
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =20A
60
V
1
µA
±100
nA
2.0
3.0
V
0.037
0.045
Ω
On characteristics (note2)
1.0
Dynamic characteristics (note 3)
500
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
25
td(on)
5
VDS =30V,VGS =0V,f =1MHz
60
pF
Switching characteristics (note 3)
Turn-on delay time
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
VDD=30V, RG=3Ω, ID =2A,
2.6
VGS =10V
16.1
2.3
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
ns
VDS =48V,VGS =10V,ID =15A
12
nC
4.1
nC
4.5
nC
Drain-Source Diode Characteristics
Drain-source diode forward voltage (note2)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS=0V,IS=20A
1.2
V
IS
20
A
ISM
60
A
Notes :
1.
TJ=25°C, VDD=30V, L=0.5mH,RG=25Ω,Starting TJ=25℃.
2.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
Guaranteed by design, not subject to production
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MCC
Typical Characteristics
Micro Commercial Components
Transfer Characteristics
Output Characteristics
20
20
VGS=6V,8V,10V,12V
Ta=25℃
VDS=3V
Pulsed
Pulsed
ID
VGS=4V
12
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
16
(A)
16
8
12
8
VGS= 3.5V
4
Ta=25℃
Ta=100℃
4
0
0
0
1
2
3
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
4
VDS
5
0
2
(V)
4
6
GATE TO SOURCE VOLTAGE
VGS
RDS(ON)—— VGS
ID
70
140
Ta=25℃
Pulsed
Pulsed
ID=20A
(m)
120
RDS(ON)
50
VGS=10V
40
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
60
30
20
10
100
80
Ta=100℃
60
40
Ta=25℃
20
0
0
4
8
12
16
DRAIN CURRENT
ID
20
3
(A)
4
5
9
10
(V)
Threshold Voltage
(V)
Pulsed
VTH
1
Ta=100℃
THRESHOLD VOLTAGE
IS (A)
8
VGS
3
20
10
7
GATE TO SOURCE VOLTAGE
IS —— VSD
SOURCE CURRENT
8
(V)
Ta=25℃
0.1
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
1.2
2
ID=250uA
1
0
25
1.4
VSD (V)
50
75
JUNCTION TEMPERATURE
100
TJ
125
( ℃)
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Revision: A
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2016/05/05
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Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel:2.5Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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Revision: A
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2016/05/05
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