Marktech EZ600 Gen ii led Datasheet

Cree® EZ600™ Gen II LED
Data Sheet
CxxxEZ600-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These
vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are
tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
APPLICATIONS
•
•
EZBright Power Chip LED RF Performance
General Illumination
–
450 & 460 nm - 200 mW min.
–
Automobile
–
527 nm - 60 mW min.
–
Aircraft
•
Lambertian Radiation
–
Decorative Lighting
•
Conductive Epoxy, Solder Paste or Preforms, or
–
Task Lighting
Flux Eutectic Attach
–
Outdoor Illumination
•
Low Forward Voltage – 3.5 V Typical at 350 mA
•
White LEDs
•
Single Wire Bond Structure
•
Crosswalk Signals
•
Maximum DC Forward Current - 400 mA
•
Backlighting
•
Dielectric Passivation Across Epi Surface
CxxxEZ600-Sxx000-2 Chip Diagram
A
CPR3EE Rev
Data Sheet:
Top View
Die Cross Section
Bottom View
EZBright LED Chip
580 x 580 μm2
Backside
Metallization
Gold Bond Pad
130 x 130 μm2
Cathode (-)
t = 170 μm
Anode (+);
3 μm AuSn
Dielectric Passivation
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Note 1
CxxxEZ600-Sxx000-2
DC Forward Current
400 mA
Peak Forward Current
600 mA
LED Junction Temperature
Note 3
145°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +120°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Forward Voltage (Vf, V)
Note 2
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ600-Sxx00-2
3.1
3.5
4.1
2
20
C460EZ600-Sxx00-2
3.1
3.5
4.1
2
21
C527EZ600-Sxx00-2
3.1
3.5
4.1
2
35
Mechanical Specifications
Description
CxxxEZ600-Sxx000-2
Dimension
Tolerance
P-N Junction Area (μm)
550 x 550
±40
Chip Area (μm)
580 x 580
±40
170
±25
Chip Thickness (μm)
Top Au Bond Pad (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
130 x 130
±15
3.0
±1.0
580 x 580
±40
3.0
±1.0
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C.
Specifications are subject to change without notice.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc.
2
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxEZ600-Sxx000-2
Radiant Flux (mW)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ600-Sxx000-2) orders may be filled with any or all bins (CxxxEZ600-0xxx-2)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ600-S20000-2
C450EZ600-0209-2
C450EZ600-0210-2
C450EZ600-0211-2
C450EZ600-0212-2
C450EZ600-0205-2
C450EZ600-0206-2
C450EZ600-0207-2
C450EZ600-0208-2
C450EZ600-0201-2
C450EZ600-0202-2
C450EZ600-0203-2
C450EZ600-0204-2
280
240
200
445
447.5
450
452.5
455
Radiant Flux (mW)
Dominant Wavelength (nm)
C460EZ600-S20000-2
C460EZ600-0209-2
C460EZ600-0210-2
C460EZ600-0211-2
C460EZ600-0212-2
C460EZ600-0205-2
C460EZ600-0206-2
C460EZ600-0207-2
C460EZ600-0208-2
C460EZ600-0201-2
C460EZ600-0202-2
C460EZ600-0203-2
C460EZ600-0204-2
280
240
200
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Radiant Flux (mW)
C527EZ600-S06000-2
C527EZ600-0017-2
C527EZ600-0018-2
C527EZ600-0019-2
C527EZ600-0014-2
C527EZ600-0015-2
C527EZ600-0016-2
C527EZ600-0011-2
C527EZ600-0012-2
C527EZ600-0013-2
C527EZ600-0008-2
C527EZ600-0009-2
C527EZ600-0010-2
C527EZ600-0005-2
C527EZ600-0006-2
C527EZ600-0007-2
140
120
100
80
60
520
525
530
535
Dominant Wavelength (nm)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc.
3
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Dominant Wavelength S
Characteristic Curves
4
3
2
1
0
-1
-2
25
50
75
100
125
150
These are representative measurements for the EZ600 LED product. Actual curves
will Temperature
vary slightly
Junction
(°C) for the various
radiant flux and dominant wavelength bins.
Relative Light Intensity Vs Junction Temperature
Forward Current vs. Forward Voltage
110%
350
105%
Relative Light Intensity
400
300
If (mA)
250
200
150
100
50
100%
95%
90%
85%
80%
75%
70%
65%
0
0
1
2
3
4
25
5
50
Vf (V)
Relative Intensity vs. Forward Current
Dominant Wavelength Shift (nm)
Relative
Relative Intensity
Intensity
75%
75%
50%
50%
25%
25%
50
50
100
100
150
150
200
200
250
250
300
300
350
350
5
4
3
2
1
0
-1
-2
25
400
400
50
100
125
150
Relative
Light Shift
Intensity
Vs Junction
Temperature
Voltage
Vs Junction
Temperature
20
20
110%
0.100
16
16
105%
0.000
100%
VoltageLight
ShiftIntensity
(V)
Relative
DW
DW Shift
Shift (nm)
(nm)
75
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
12
12
8
8
4
4
0
0
-4
-4
-0.100
95%
90%
-0.200
85%
-0.300
80%
-0.400
75%
70%
-0.500
0
0
50
50
100
100
150
150
200
200
If (mA)
250
250
300
300
350
350
400
400
65%
-0.600
25
25
50
50
75
75
CPR3EE Rev. A
100
100
125
125
150
150
Junction Temperature (°C)
Junction Temperature (°C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc.
4
150
6
If (mA)
-8
-8
125
Dominant Wavelength Shift Vs Junction Temperature
100%
100%
0
0
100
Junction Temperature (°C)
125%
125%
0%
0%
75
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc.
5
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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