NJ5N65 POWER MOSFET 5.0A 650V N-CHANNEL POWER MOSFET DESCRIPTION The NJ5N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES 1 TO-220 1 * VDS = 650V * ID = 5.0A * RDS(ON) =2.5Ω@VGS = 10V. * Ultra Low gate charge (typical 15nC) * Low reverse transfer capacitance (CRSS = typical 6.5 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220F 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ5N65-LI NJ5N65-BL NJ5N65F-LI NJ5N65A-LI NJ5N65D-TR NJ5N65D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ5N65 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25̓˖ unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 TO-220F Power Dissipation SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD RATINGS 650 ±30 4.5 4.5 18 210 10 4.5 100 36 UNIT V V A A A mJ V/ns W TO-251 / TO-252 54 ̓˖ Junction Temperature TJ +150 ̓˖ Operation Temperature TOPR -55 ~ +150 ̓˖ Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 ȍ, Starting TJ = 25̓˖ 4. ISD 4.5A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ = 25̓˖ THERMAL DATA JunctionʳtoʳAmbient JunctionʳtoʳCase PARAMETER TO-220 TO-220F TO-251 / TO-252 TO-220 TO-220F TO-251 / TO-252 SYMBOL șJA șJC RATINGS 62.5 62.5 160 1.25 3.47 2.3 UNIT °C/W °C/W NJ5N65 POWER MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS =0V, ID = 250ȝA VDS =650V, VGS = 0V VGS =30V, VDS = 0V VGS =-30V, VDS = 0V Breakdown Voltage Temperature ϦBVDSS/ƸTJ ID =250ȝA, Referenced to 25к Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250ȝA Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.25A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 325V, ID =4.5 A, Turn-On Rise Time tR RG = 25ȍ (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS = 520 V, ID = 4.5A, Gate-Source Charge QGS VGS = 10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/ȝs (Note 1) Reverse Recovery Charge QRR Note 1. Pulse Test: Pulse width 300ȝs, Duty cycle 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 650 1 100 -100 nA V/̓˖ 0.6 2.0 V ȝA 2.0 4.0 2.5 V ȍ 515 55 6.5 670 72 8.5 pF pF pF 10 42 38 46 15 2.5 6.6 30 90 85 100 19 ns ns ns ns nC nC nC 1.4 V 4.5 A 18 A 300 2.2 ns ȝC NJ5N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ5N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Switching Waveforms ʳ ʳ ʳ Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD VDD ID(t) VDS(t) VDD 10V D.U.T. tp tp Time ʳ ʳ ʳ ʳ Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Unclamped Inductive Switching Waveforms NJ5N65 POWER MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Region Characteristics VGS Top: 5.0V 101 Bottorm:4.5V 101 Drain Current, ID (A) Drain Current, ID (A) 5V 100 -1 10 4.5V 10-2 -1 10 *Notes: 1. 250μs Pulse Test 2. TC=25ć 25ć 100 *Notes: 1. VDS=40V 2. 250μs Pulse Test 10-1 2 100 101 Drain-Source Voltage, VDS (V) 4 6 8 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (¡) 10 0m s 10