Advance Technical Information IXFP14N85XM X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 850V = 14A 550m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 14 A IDM TC = 25C, Pulse Width Limited by TJM 35 A IA TC = 25C 7 A EAS TC = 25C 500 mJ dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 38 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G DS G = Gate S = Source D = Drain Features International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 7A, Note 1 V 5.5 V 100 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 1 mA 550 m DS100771(1/17) IXFP14N85XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 7A, Note 1 4.6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 7.7 S 1 1043 pF 1110 pF 17 pF 55 177 pF pF 16 ns 30 ns 36 ns 13 ns 30 nC 7 nC 17 nC Crss OVERMOLDED TO-220 (IXFP...M) 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 7A RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 7A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.30 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 14 A ISM Repetitive, pulse Width Limited by TJM 56 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 7A, -di/dt = 100A/μs 116 0.9 15.5 VR = 100V ns μC A Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP14N85XM Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 14 VGS = 10V VGS = 10V 24 12 9V 20 9V I D - Amperes I D - Amperes 10 8V 8 6 4 16 12 8V 8 7V 7V 4 2 6V 6V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 14 4.2 VGS = 10V 9V 12 20 VDS - Volts 3.8 VGS = 10V 3.4 I D - Amperes RDS(on) - Normalized 8V 10 8 7V 6 4 3.0 I D = 14A 2.6 2.2 1.8 I D = 7A 1.4 1.0 6V 2 0.6 5V 0.2 0 0 4.0 4 8 12 16 20 -50 24 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 3.5 BV DSS / V GS(th) - Normalized 1.1 R DS(on) - Normalized TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 4 8 12 16 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 20 24 28 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP14N85XM Fig. 7. Input Admittance Fig. 8. Transconductance 14 14 12 12 10 TJ = 125ºC 25ºC - 40ºC 8 25ºC g f s - Siemens I D - Amperes 10 TJ = - 40ºC 6 8 125ºC 6 4 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 2 4 6 VGS - Volts 8 10 12 14 16 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 45 10 VDS = 425V 40 I D = 7A 8 35 I G = 10mA 6 VGS - Volts I S - Amperes 30 25 20 15 4 TJ = 125ºC 10 2 TJ = 25ºC 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 5 10 VSD - Volts 20 25 30 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 25μs RDS(on) Limit 1000 10 Ciss I D - Amperes Capacitance - PicoFarads 15 QG - NanoCoulombs 100 Coss 10 100μs 1 1ms 0.1 TJ = 150ºC 1 f = 1 MHz TC = 25ºC Single Pulse Crss 0.1 DC 10ms 100ms 1s 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFP14N85XM Fig. 13. Output Capacitance Stored Energy Fig. 14. Maximum Transient Thermal Impedance 20 10 18 1 14 Z (th)JC - K / W E OSS - MicroJoules 16 12 10 8 0.1 6 0.01 4 2 0 0 100 200 300 400 500 600 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 700 800 900 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_14N85X(S4-D901) 1-10-17-A