IRF IRAM136-0760A2 5a, 600v with open emitter pin Datasheet

PD-97333 RevA
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
IRAM136-0760A
Series
5A, 600V
with Open Emitter Pins
Description
International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins
for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator
Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark
3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A
built-in high precision temperature monitor and over-current protection feature, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation. Using a Single in line package (SIP05) with full transfer mold structure and CTI>600 minimizes
PCB space and resolves isolation problems to heatsink.
Features
x
x
x
x
x
x
x
x
x
x
x
Integrated gate drivers and bootstrap diodes
Temperature monitor
Protection shutdown pin
Low VCE (on) Trench IGBT technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.1~0.5kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
Absolute Maximum Ratings
VCES / VRRM
+
IGBT/ FW Diode Blocking Voltage
600
Positive Bus Input Voltage
450
V
V
Io @ TC=25°C
RMS Phase Current (Note 1)
5
Io @ TC=100°C
RMS Phase Current (Note 1)
3.5
Ipk
Maximum Peak Phase Current (Note 2)
5.5
Fp
Maximum PWM Carrier Frequency
20
Pd
Maximum Power dissipation per IGBT @ TC =25°C
18
W
VISO
Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
TC
Operating Case Temperature Range
-20 to +100
TSTG
Storage Temperature Range
-40 to +125
T
Mounting torque Range (M3 screw)
A
kHz
+150
0.8 to 1.0
°C
Nm
Note 1: Sinusoidal Modulation at V+=320V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms, TC=25°C, FPWM=16kHz.
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1
IRAM136-0760A
Internal Electrical Schematic – IRAM136-0760A
V+ (13)
Q1
D1
Q2
D2
Q3
D3
Q4
D4
Q5
D5
Q6
D6
VRU (17)
VRV (19)
VRW (21)
R1
VB1 (9)
C1
R2
R3
U, VS1 (10)
VB2 (5)
C2
V, VS2 (6)
VB3 (1)
C3
R4
R5
R6
W, VS3 (2)
D7
D8
D9
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
24 HO1
R9
25 VB1
LO2 15
1 VCC
HIN1 (20)
2 HIN1
HIN2 (22)
3 HIN2
HIN3 (23)
4 HIN3
LIN1 (24)
Driver IC
LO3 14
LIN1 LIN2 LIN3
6
7
5
F ITRIP EN RCIN VSS
8
9
10 11 12
COM 13
LIN2 (25)
LIN3 (26)
ITRIP (16)
FLT/EN (18)
R7
R8
VTH (27)
VCC (28)
C5
C4
VSS (29)
2
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IRAM136-0760A
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
PBR Peak
Units Conditions
Bootstrap Resistor Peak Power
(Single Pulse)
---
15.0
W
VS1,2,3
High side floating supply offset
voltage
VB1,2,3 - 20
VB1,2,3 +0.3
V
VB1,2,3
High side floating supply voltage
-0.3
600
V
VCC
Low Side and logic fixed supply
voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, ITrip
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
tP=100μs, TC =100°C
ESR / ERJ series
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
Typ
Max
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
V(BR)CES / T
Temperature Coeff. Of
Breakdown Voltage
---
0.3
---
V/°C
VCE(ON)
Collector-to-Emitter Saturation
Voltage
ICES
Zero Gate Voltage Collector
Current
VFM
Diode Forward Voltage Drop
VBDFM
---
1.7
2.0
---
2.1
---
---
5
80
---
80
---
Units Conditions
V
A
VIN=0V, IC=250μA
VIN=0V, IC=250μA
(25°C - 150°C)
IC=3.5A
TJ=25°C, VCC=15V
IC=3.5A
VIN=0V, V+=600V, TJ=150°C
IF=3.5A
--
1.6
2.3
---
1.4
---
Bootstrap Diode Forward Voltage
Drop
--
1.2
---
V
IF=1A
RBR
Bootstrap Resistor Value
---
22
---
TJ=25°C
RBR/RBR
Bootstrap Resistor Tolerance
---
---
±5
%
TJ=25°C
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V
TJ=150°C
VIN=0V, V+=600V
IF=3.5A, TJ=150°C
3
IRAM136-0760A
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
Min
Typ
Max
---
210
340
Units Conditions
EON
Turn-On Switching Loss
EOFF
Turn-Off Switching Loss
---
20
30
ETOT
Total Switching Loss
---
245
370
EREC
Diode Reverse Recovery energy
---
15
25
tRR
Diode Reverse Recovery time
---
135
---
EON
Turn-on Switching Loss
---
300
---
EOFF
Turn-off Switching Loss
---
50
---
ETOT
Total Switching Loss
---
350
---
EREC
Diode Reverse Recovery energy
---
30
---
tRR
Diode Reverse Recovery time
---
170
---
ns
QG
Turn-On IGBT Gate Charge
---
9
13
nC
RBSOA
Reverse Bias Safe Operating Area
μJ
IC=3.5A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
μJ
IC=3.5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=4A, V+=400V, VCC=15V
TJ=150°C, IC=3.5A, VP=600V
V+= 450V
VCC=+15V to 0V
FULL SQUARE
See CT3
TJ=25°C, VP=600V,
SCSOA
ICSC
Short Circuit Safe Operating Area
Short Circuit Collector Current
5
---
---
30
---
---
μs
A
V+= 360V,
VCC=+15V to 0V
See CT2
TJ=25°C, V+= 400V, VCC=15V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential (Note 3)
Symbol
Definition
Min
Typ
Max
VB1,2,3
High side floating supply voltage
VS+12
VS+15
VS+20
VS1,2,3
High side floating supply offset voltage
Note 4
---
450
VCC
Low side and logic fixed supply voltage
12
15
20
VITRIP
ITRIP input voltage
VSS
---
VSS+5
VIN
Logic input voltage LIN, HIN, FLT/EN
VSS
---
VSS+5
HIN
High side PWM pulse width
1
---
---
Deadtime
External dead time between HIN and LIN
1
----Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
Units
V
V
V
μs
μs
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IRAM136-0760A
Static Electrical Characteristics Driver Function @ TJ= 25°C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
Definition
Min
Typ
Max
Units
VIN,th+
Positive going input threshold for LIN, HIN, FLT/EN
2.5
---
---
V
VIN,th-
Negative going input threshold for LIN, HIN, FLT/EN
---
---
0.8
V
VCCUV+, VBSUV+
VCC and VBS supply undervoltage, Positive going threshold
10.6
11.1
11.6
V
VCCUV-, VBSUV-
VCC and VBS supply undervoltage, Negative going threshold
10.4
10.9
11.4
V
VCCUVH, VBSUVH
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
IQBS
Quiescent VBS supply current
---
---
120
μA
IQCC
Quiescent VCC supply current
---
---
4
mA
ILK
Offset Supply Leakage Current
---
---
50
μA
IIN+
Input bias current VIN=3.3V for LIN, HIN, FLT/EN
---
100
195
μA
IIN-
Input bias current VIN=0V for LIN, HIN, FLT/EN
-1
--
---
μA
ITRIP+
ITRIP bias current VT/ITRIP=3.3V
---
3.3
6
μA
ITRIP-
ITRIP bias current VT/ITRIP=0V
-1
---
---
μA
V(ITRIP)
ITRIP threshold Voltage
0.44
0.49
0.54
V
V(ITrip, HYS)
ITRIP Input Hysteresis
---
0.07
---
V
Ron_FLT
Fault low on resistance
---
50
100
Dynamic Electrical Characteristics @ TJ= 25°C
Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
TON
Units Conditions
Input to Output propagation turnon delay time (see fig.11)
---
0.7
---
TOFF
Input to Output propagation turnoff delay time (see fig. 11)
---
0.7
---
μs
μs
IC=3.5A, V+=300V
TFILIN
Input filter time (HIN,LIN,FLT/EN)
100
200
---
ns
VIN=0 or VIN=5V
TEN
EN to output propagation delay
300
450
600
ns
VIN=0 or VIN=5V, VEN=0
TFLT
ITRIP to Fault propagation delay
400
600
800
ns
VIN=0 or VIN=5V, VITRIP=5V
TBLT-ITRIP
ITRIP Blanking Time
100
150
---
ns
VIN=0 or VIN=5V, VITRIP=5V
TITRIP
ITRIP to six switch turn-off
propagation delay (see fig. 2)
---
---
1.75
μs
IC=3.5A, V+=300V
DT
Dead Time
220
290
360
ns
VIN=0 or VIN=5V
MT
Matching Propagation Delay Time
(On & Off) all channels
---
40
75
ns
External dead time> 400ns
TFLT-CLR
FAULT clear time (see fig. 2)
---
1.7
---
ms
TC = 25°C
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5
IRAM136-0760A
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Thermal resistance, per IGBT
---
6.4
7.0
Rth(J-C)
Thermal resistance, per Diode
---
9.0
9.9
---
Units Conditions
Inverter Operating Condition
Flat, greased surface. Heatsink
°C/W
compound thermal conductivity
1W/mK
Rth(C-S)
Thermal resistance, C-S
---
0.1
CD
Creepage Distance, from pins to
backside of module
3.2
---
---
mm
CTI
Comparative Tracking Index
600
---
---
V
See outline Drawings
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max
Units Conditions
R25
Resistance
97
100
103
k
R125
Resistance
2.25
2.52
2.80
k
B
B-constant (25-50°C)
4165
4250
4335
k
125
°C
Temperature Range
-40
Typ. Dissipation constant
---
1
TC = 25°C
TC = 125°C
R2 = R1e [B(1/T2 - 1/T1)]
mW/°C TC = 25°C
---
Input-Output Logic Level Table
6
FLT/EN
ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
1
0
1
0
V+
1
0
0
1
0
1
0
0
0
Off
1
0
1
1
Off
1
1
X
X
Off
0
X
X
X
Off
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IRAM136-0760A
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
T ITRIP
T FLT-CLR
Figure 2. ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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7
IRAM136-0760A
Module Pin-Out Description
8
Pin
Name
1
VB3
2
W,VS3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
3
na
none
4
na
none
5
VB2
6
V,VS2
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
7
na
none
8
na
none
9
VB1
10
U,VS1
11
na
none
12
na
none
13
V
+
14
na
15
na
16
ITRIP
Current Protection Pin
17
VRU
Low Side Emitter Connection - Phase 1
18
FLT/EN
19
VRV
Low Side Emitter Connection - Phase 2
20
HIN1
Logic Input High Side Gate Driver - Phase 1
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
Positive Bus Input Voltage
none
none
Fault Output and Enable Pin
21
VRW
Low Side Emitter Connection - Phase 3
22
HIN2
Logic Input High Side Gate Driver - Phase 2
23
HIN3
Logic Input High Side Gate Driver - Phase 3
24
LIN1
Logic Input Low Side Gate Driver - Phase 1
25
LIN2
Logic Input Low Side Gate Driver - Phase 2
26
LIN3
Logic Input Low Side Gate Driver - Phase 3
27
VTH
Temperature Feedback
28
VCC
+15V Main Supply
29
VSS
Negative Main Supply
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IRAM136-0760A
Typical Application Connection IRAM136-0760A
1
VB3 (1)
W, VS3 (2)
W
3-Phase AC
MOTOR
VB2 (5)
V, VS2 (6)
V
VB1 (9)
U, VS1 (10)
U
V+
V+ (13)
DC BUS
CAPACITORS
ITRIP (16)
VRU (17)
PHASE LEG
CURRENT
SENSE
FLT/EN (18)
VRV (19)
HIN1 (20)
VRW (21)
HIN2 (22)
HIN3 (23)
LIN1 (24)
CONTROLLER
IRAM136-0760A
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
BOOT-STRAP
CAPACITORS
LIN2 (25)
LIN3 (26)
VTH (27)
VDD (28)
100nF
10m
0.1m
29
Enable
VSS (29)
15 V
5V
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings
Table on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
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9
IRAM136-0760A
Maximum Output Phase RMS Current - A
8
7
6
5
4
TC = 80ºC
TC = 90ºC
TC = 100ºC
3
2
1
0
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
Maximum Output Phase RMS Current - A
4
3
2
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
1
0
1
10
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
10
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IRAM136-0760A
60
Total Power Loss- W
50
40
30
20
IOUT = 4.0A
IOUT = 3.5A
IOUT = 3.0A
10
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
80
70
Total Power Loss - W
60
50
40
30
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
20
10
0
0
1
2
3
4
5
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
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11
IRAM136-0760A
Max Allowable Case Temperature - ºC
160
140
120
100
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
80
60
40
0
1
2
3
4
5
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
IGBT Junction Temperature - °C
TJ avg = 1.2 x TTherm + 21
150
140
130
120
110
100
105
90
65
70
75
80
85
90
95
100
105
110
115
Internal Therm istor Tem perature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM136-0760A
5.0
Thermistor Pin Read-Out Voltage - V
4.5
4.0
3.5
3.0
2.5
2.0
Max
Avg.
Min
1.5
1.0
0.5
0.0
-40 -30 -20 -10
0
10
20 30 40 50 60 70 80
Therm istor Tem perature - °C
90 100 110 120 130
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
Recommended Bootstrap Capacitor - F
11.0
10F
10.0
9.0
8.0
6.8F
7.0
6.0
4.7F
5.0
4.0
3.3F
3.0
2.2F
2.0
1.5F
1.0
0.0
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAM136-0760A
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN /LIN
90% IC
50%
VCE
HIN /LIN
HIN /LIN
50%
HIN /LIN
50%
VCE
10% IC
10% IC
tr
tf
TON
TOFF
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery.
14
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IRAM136-0760A
V+
5V
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
IO
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
1k
VCC
10k
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
5VZD
U,V,W
Lo
IN
IO
Io
Figure CT2. S.C.SOA Circuit
V+
1k
VCC
10k
IC
Driver
5VZD
IN
Ho
Hin1,2,3
Lin1,2,3
IN
U,V,W
Lo
IO
Io
Figure CT3. R.B.SOA Circuit
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15
IRAM136-0760A
Package Outline IRAM136-0760A
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-0760A
P
note4
note2
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
16
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IRAM136-0760A
Package Outline IRAM136-0760A2
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-0760A2
P
note4
note2
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2008-07-29
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17
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