DSK HER540B High efficiency rectifier Datasheet

HER510B--- HER560B
Diode Semiconductor Korea
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 5.0 A
HIGH EFFICIENCY RECTIFIERS
FEATURES
D2PAK
High current capability
4.5± 0.2
1.3± 0.2
Low cost
Low leakage
Low forward voltage drop
10.2± 0.2
1.4± 0.2
PIN
1
2
3
0.1± 0.1
1.3± 0.1
MECHANICAL DATA
0.8± 0.1
Case:JEDEC D2PAK,molded plastic body
Terminals: Solderable per MIL-STD-750,
Method 2026
0.5± 0.2
8.9± 0.3
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
13.2± 0.5
4
0.4± 0.1
5.0± 0.5
1
Polarity: As marked
2
3
Weight: 0.087 ounces,2.2 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
510B
HER
520B
HER
540B
HER
560B
UNITS
Maximum recurrent peak reverse voltage
V RRM
100
200
400
600
V
Maximum RMS voltage
VRMS
70
140
280
420
V
Maximum DC blocking voltage
VDC
100
200
400
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@TC=75
IF(AV)
5.0
A
IFSM
100
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 5.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
VF
IR
1.0
1.3
10
(Note1)
trr
Typical junction capacitance
(Note2)
CJ
40
Typical thermal resistance
(Note3)
RθJC
20
Storage temperature range
A
100
- 55 ---- + 150
TSTG
- 55 ---- + 150
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
50
TJ
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
V
150
Maximum reverse recovery time
Operating junction temperature range
1.7
ns
pF
/W
www.diode.kr
Diode Semiconductor Korea
HER510B --- HER560B
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t rr
50
N 1.
10
N 1.
+0.5A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/45 ns/cm
FIG.3 -- FORWARD DERATING CURVE
4 00V
T J =25
Pulse W idth=300 µ S
10
1 00 \2 00V
6 00 V
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
4.0
3.0
AMPERES
AVERAGE FORWARD CURRENT
100
2.0
1.0
0
25
50
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
400
200
100
40
TJ=25
f=1MHz
20
10
.1
.2
.4
1.0
2 4
10 20
REVERSE VOLTAGE,VOLTS
40
100
125
150
100
75
AMPERES
600
100
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
1000
75
CASE TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
z
5.0
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
TJ=125℃
8.3ms Single Half
Sine-Wave
50
25
0
1
2
4
8
10 20
40
60 100
NUMBER OF CYCLES AT 60Hz
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