INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP147N12N3，IIPP147N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤14.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pulsed 224 A PD Total Dissipation @TC=25℃ 107 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.4 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP147N12N3，IIPP147N12N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=61μA RDS(on) Drain-Source On-Resistance IGSS MIN TYP MAX 120 V 4 V VGS=10V; ID=56A 14.7 mΩ Gate-Source Leakage Current VGS= 20V;VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V 1 μA VSD Diode forward voltage IF=56A; VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 2 UNIT isc & iscsemi is registered trademark