CYStech Electronics Corp. Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 1/6 High –speed multi-chip diode DAN217S6R Description The DAN217S6R consists of two set of high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-363 plastic SMD package. Equivalent Circuit DAN217S6R Outline SOT-363 1：Anode 2：Cathode Features • Small plastic SMD package • • • • • • High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 450mA. Very low leakage current Pb-free package Applications • High-speed switching in thick and thin-film circuits. DAN217S6R CYStek Product Specification Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings, per diode @TA=25℃ Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge Symbol VRRM VR IF t=1μs t=10ms t=1s Total power dissipation (Note 1) Total power dissipation (Note 2) Junction Temperature Storage Temperature IFSM Ptot Ptot Tj Tstg Min - Max 85 85 160 Unit V V mA - 4 1 0.5 200 300 150 +150 A A A mW mW °C °C -65 Electrical Characteristics, per diode @ Tj=25℃ unless otherwise specified Parameters Symbol Reverse breakdown voltage V(BR)R Forward voltage VF Reverse current Diode capacitance IR CD Reverse recovery time trr Conditions IR=100μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA Min Typ. Max Unit 85 - - - - 2 0.9 1 1.1 1.25 5 - V V V V V nA pF - - 4 ns Thermal Characteristics Symbol Parameter Conditions Value Rth,j-a Rth,j-a thermal resistance from junction to ambient thermal resistance from junction to ambient Note 1 625 417 Note 2 Note : 1. Device mounted on a FR-4 PCB with copper area of 1 inch × 0.82 inch and thickness 0.062 inch . 2. Device mounted on a Alumina PCB with area of 0.4 inch × 0.3 inch and thickness 0.024 inch . Unit ℃/W ℃/W Ordering Information Device DAN217S6R DAN217S6R Package SOT-363 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel K52 CYStek Product Specification Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Forward Current vs Forward Voltage Power Derating Curve 1000 250 200 Forward Current---I F(mA) Power Dissipation---PD(mW) Per element See Note 1 on page 1 150 100 100 T a=8 5℃ 10 T a= 2 5℃ 1 T a=- 40℃ 50 Per package 0.1 0 0 25 50 75 100 125 0.2 150 0.4 0.8 1 1.2 Forward Voltage---VF(V) Ambient Temperature---TA(℃) Reverse Leakage Current vs Reverse Voltage Capacitance vs Reverse Voltage 0.68 100 Per element T a= 125 ℃ 1 Ta=85℃ 0.1 Per element 0.64 T a= 150℃ 10 Diode Capacitance ---C D(pF) Reverse Leakage Current---IR( μA) 0.6 Ta=55℃ 0.01 f=1MHz Ta=25℃ 0.6 0.56 0.52 0.48 0.44 T a= 25℃ 0.001 0 10 20 30 Reverse Voltage---VR(V) DAN217S6R 0.4 40 50 0 2 4 6 8 10 12 14 16 Reverse Voltage---VR (V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 4/6 Reel Dimension Carrier Tape Dimension DAN217S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DAN217S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 6/6 SOT-363 Dimension Marking: K52 Device Code 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Anode1 (A1) Pin 2. Cathode1 (C1) Pin 3. Anode/Cathode 2 (AC2) Pin 4. Anode2 (A2) Pin 5. Cathode2 (C2) Pin 6. Anode/Cathode 1 (AC1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DAN217S6R CYStek Product Specification