Formosa EGFM105-MH1 Chip efficient fast rectifier Datasheet

Chip Efficient Fast Rectifier
Formosa
MS
EGFM101-MH1 THRU EGFM105-MH1
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
Chip Efficient Fast Rectifier
Formosa
MS
EGFM101-MH1 THRU EGFM105-MH1
1.0A Sufrace Mount
Efficient Fast Rectifiers-50-600V
Features
Package outline
• Batch process design, excellent power dissipation offers
•
•
•
•
•
•
SOD-123H1
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current & surge capability.
Low forward dropdown voltage
Glass passivated chip junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. EGFM101-MΗ1-H.
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
0.012(0.3) Typ.
0.004(0.1) Typ.
Mechanical data
•
•
•
Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H1
Terminals :Plated terminals, solderable per MIL-STD-750,
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•
•
•
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.0103 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
SYMBOLS EGFM101-MH1 EGFM102-MH1 EGFM103-MH1 EGFM104-MH1 EGFM105-MH1
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
140
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forward rectified current
IO
1.0
A
Peak forward surge current 8.3ms
single half sine-wave(JEDEC method)
IFSM
20
A
Maximum forward voltage at I F =1.0A
VF
Maximum DC reverse current T J =25 ° C
at rated DC blocking voltage T J =125 ° C
IR
5.0
100
uA
uA
Typical junction capacitance (Note 2)
CJ
15
pF
Maximum reverse recovery time (Note 1)
trr
25
ns
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
0.875
1.25
1.75
V
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
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TEL:886-2-22696661
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Page 2
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
Rating and characteristic curves (EGFM101-MH1 THRU EGFM105-MH1)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
10
1
EGFM104-MH1
TJ=25°C
1.0
0.8
0.6
P.C.B. Mounted on
0.2 " x 0.2 " (5 mm x 5 mm)
Copper Pad Areas
0.4
0.2
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
0.1
EGFM105-MH1
pulse width =300μs
1% duty cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
EGFM101-MH1 - EGFM103-MH1
1.2
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
8.3ms Single Half
TJ=25 C
JEDEC method
10
0
1
5
(+)
1W
NONINDUCTIVE
Sine Wave
20
50
10
100
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
TJ=25 C
f=1.0MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE,(pF)
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
30
25
20
15
10
5
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
Chip Efficient Fast Rectifier
Formosa
MS
EGFM101-MH1 THRU EGFM105-MH1
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
EGFM101-MH1
EGFM102-MH1
EGFM103-MH1
EGFM104-MH1
EGFM105-MH1
E1
E2
E3
E4
E5
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
PACKAGE
A
B
C
SOD-123H1
0.071 (1.80)
0.051 (1.30)
0.067 (1.70)
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
Chip Efficient Fast Rectifier
Formosa
MS
EGFM101-MH1 THRU EGFM105-MH1
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOD-123H1
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
Chip Efficient Fast Rectifier
Formosa
MS
EGFM101-MH1 THRU EGFM105-MH1
Reel packing
PACKAGE
REEL SIZE
SOD-123H1
7"
COMPONENT
SPACING
REEL
(pcs)
(m/m)
4.0
3,000
BOX
(pcs)
30,000
INNER
BOX
REEL
DIA,
CARTON
SIZE
CARTON
APPROX.
GROSS WEIGHT
(m/m)
(m/m)
(m/m)
(pcs)
(kg)
183*183*123
178
382*262*387
240,000
8.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
Chip Efficient Fast Rectifier
Formosa
MS
EGFM101-MH1 THRU EGFM105-MH1
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=150 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
MIL-STD-750D
METHOD-1031
O
Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121539
2014/01/20
2015/01/21
B
7
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