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FDB9406L_F085 N-Channel Logic Level PowerTrench® MOSFET 40 V, 110 A, 1.5 m Features Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current package drawing, please refer to the Fairchild website at https://www.fairchildsemi.com/package-drawings/TO/ TO263A02.pdf Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 217 mJ Power Dissipation 176 W Derate Above 25oC 1.18 W/oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.85 oC/W 43 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 60μH , IAS = 85A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDB9406L Device FDB9406L_F085 Semiconductor Components Industries, LLC, 2017 March, 2017, Rev. 1.0 Package D-PAK(TO-263) 1 Reel Size 330mm Tape Width 24mm Quantity 800units Publication Order Number: FDB9406L_F085 FDB9406L_F085 N-Channel Logic Level PowerTrench® MOSFET www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250A, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 A TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V - - 1 mA - - ±100 nA On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A 1.0 1.8 3.0 V ID = 80A, VGS= 4.5V - 1.7 2.2 m ID = 80A, VGS= 10V - 1.2 1.5 m - 2.1 2.6 m TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge VDS = 20V, VGS = 0V, f = 1MHz VDD = 32V ID = 80A - 8600 - pF - 2500 - pF - 107 - pF - 2.1 - - 121 170 nC - 15 - nC - 26 - nC - 18 - nC ns Switching Characteristics ton Turn-On Time - - 90 td(on) Turn-On Delay - 20 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay - 67 - ns tf Fall Time - 23 - ns toff Turn-Off Time - - 145 ns V VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6 Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/s VDD = 32V - 90 120 ns - 125 164 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDB9406L_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. CURRENT LIMITED BY SILICON 270 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 300 1.2 0.8 0.6 0.4 0.2 0.0 210 VGS = 10V CURRENT LIMITED BY PACKAGE 180 150 120 90 60 30 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 175 25 2 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZJC 240 DUTY CYCLE - DESCENDING ORDER 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 -5 10 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDB9406L_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 300 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms 0.1 0.1 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) 300 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 100 TJ = -55oC 50 TJ = 175oC 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 10 100 1000 VGS = 0 V TJ = 175 oC 10 TJ = 25 oC 1 0.2 0.4 0.6 0.8 1.0 1.2 300 ID, DRAIN CURRENT (A) 10V Top 6V 5V 4.5V 4V 3.5V 3V Bottom 150 1 Figure 8. Forward Diode Characteristics VGS 200 0.1 VSD, BODY DIODE FORWARD VOLTAGE (V) 250s PULSE WIDTH Tj=25oC 250 0.01 100 0.1 0.0 5 Figure 7. Transfer Characteristics 300 1 0.001 300 TJ = 25oC 1 STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability 200 0 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX VDD = 5V 250 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 50 0 250s PULSE WIDTH Tj=175oC 250 VGS 10V Top 6V 5V 4.5V 4V 3.5V 3V Bottom 200 150 100 50 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDB9406L_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 50 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX ID = 80A 40 30 o TJ = 25 C 20 TJ = 175oC 10 0 1 2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.3 1.2 1.0 ID = 80A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 5mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 0.9 0.8 1.00 0.7 0.6 0.95 0.5 0.4 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 10000 Ciss Coss 1000 100 Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) 1.4 1.05 1.0 10 0.1 1.6 1.10 1.1 0.3 -80 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250A 1.2 1.8 100 Figure 15. Capacitance vs. Drain to Source Voltage 10 ID = 80A 8 VDD = 20V VDD = 24V 6 VDD =16V 4 2 0 0 10 20 30 40 50 60 70 80 90 100110120130 Qg, GATE CHARGE(nC) Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDB9406L_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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