IRF7401PbF-1
HEXFET® Power MOSFET
VDS
20
RDS(on) max
(@VGS = 4.5V)
Qg
ID
(@TA = 25°C)
V
0.022
Ω
48
nC
8.7
A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7401PbF-1
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7401PbF-1
IRF7401TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
10
8.7
7.0
35
2.5
0.02
± 12
5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
1
Maximum Junction-to-Ambient
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Typ.
Max.
Units
50
°C/W
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November 18, 2013
IRF7401PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
20
0.70
11
Typ.
0.044
13
72
65
92
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
2.5
LS
Internal Source Inductance
4.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600
690
310
V(BR)DSS
IGSS
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.022
VGS = 4.5V, ID = 4.1A
Ω
0.030
VGS = 2.7V, ID = 3.5A
V
VDS = VGS, ID = 250µA
S
VDS = 15V, ID = 4.1A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, T J = 125 °C
100
VGS = 12V
nA
-100
VGS = -12V
48
ID = 4.1A
5.1
nC VDS = 16V
20
VGS = 4.5V, See Fig. 6 and 12
VDD = 10V
ID = 4.1A
ns
RG = 6.0Ω
RD = 2.4Ω, See Fig. 10
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = 15V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
IS
I SM
VSD
t rr
Qrr
ton
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
3.1
showing the
A
G
integral reverse
35
p-n junction diode.
S
1.0
V
TJ = 25°C, IS = 2.0A, VGS = 0V
39
59
ns
TJ = 25°C, IF = 4.1A
42
63
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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November 18, 2013
IRF7401PbF-1
1000
1000
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
10
1.5V
1
0.1
20μs PULSE WIDTH
TA = 25°C
A
1
10
100
10
1.5V
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 150°C
10
V DS = 15V
20μs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
Fig 3. Typical Transfer Characteristics
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A
5.0
VGS , Gate-to-Source Voltage (V)
3
10
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1.5
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
TOP
I D = 6.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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A
80 100 120 140 160
November 18, 2013
IRF7401PbF-1
3000
V GS , Gate-to-Source Voltage (V)
2500
C, Capacitance (pF)
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
2000
1500
Coss
1000
Crss
500
0
1
10
100
I D = 4.1A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
10
30
40
50
A
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25°C
TJ = 150°C
10
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
20
1
VGS = 0V
0.1
0.0
1.0
2.0
3.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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A
4.0
100us
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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November 18, 2013
100
IRF7401PbF-1
10.0
VDS
V GS
ID , Drain Current (A)
8.0
D.U.T.
RG
6.0
RD
+
- V DD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 18, 2013
IRF7401PbF-1
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2μF
12V
.3μF
4.5V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
6
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ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
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November 18, 2013
IRF7401PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For N-Channel HEXFETS
7
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November 18, 2013
IRF7401PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
MILLIMETERS
MIN
A
E
INCHES
DIM
B
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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November 18, 2013
IRF7401PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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November 18, 2013