Renesas NP88N055MHE-S18-AYNote1 Switching n-channel power mos fet Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N055EHE, NP88N055KHE
NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP88N055EHE-E1-AY
Note1, 2
NP88N055EHE-E2-AY
Note1, 2
NP88N055KHE-E1-AY
Note1
NP88N055KHE-E2-AY
Note1
NP88N055CHE-S12-AZ
Note1, 2
NP88N055DHE-S12-AY
Note1, 2
NP88N055MHE-S18-AY
Note1
NP88N055NHE-S18-AY
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
Pure Sn (Tin)
TO-220 (MP-25) typ. 1.9 g
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
(TO-262)
Ciss = 7600 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14148EJ8V0DS00 (8th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±88
A
ID(pulse)
±352
A
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse)
Note1
Note2
Total Power Dissipation (TA = 25°C)
PT1
1.8
W
Total Power Dissipation (TC = 25°C)
PT2
288
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Single Avalanche Current
Note3
IAS
65/88
A
Single Avalanche Energy
Note3
EAS
422/15
mJ
Storage Temperature
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.52
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D14148EJ8V0DS
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
30
60
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 44 A
Input Capacitance
Ciss
Coss
Output Capacitance
S
4.2
5.3
mΩ
VDS = 25 V,
7600
11400
pF
VGS = 0 V,
1100
1700
pF
480
870
pF
f = 1 MHz
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 44 A,
42
93
ns
tr
VGS = 10 V,
26
66
ns
120
240
ns
32
81
ns
VDD = 44 V,
130
200
nC
VGS = 10 V,
31
nC
49
nC
IF = 88 A, VGS = 0 V
1.0
V
Rise Time
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
RG = 1 Ω
ID = 88 A
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
IF = 88 A, VGS = 0 V,
62
ns
Qrr
di/dt = 100 A/μs
120
nC
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D14148EJ8V0DS
3
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
350
100
80
60
40
20
0
0
25
50
75
250
200
150
100
50
0
100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
d
ite
im V)
) L 0
on
1
(
S
ID(DC)
RD GS =
(V
PW
ID(pulse)
s
0μ
s
ms
Po
Lim wer DC
ite Dis
d
sip
a
=1
0μ
10
1m
10
Single Pulse Avalanche Energy - mJ
TC - Case Temperature - °C
1000
ID - Drain Current - A
300
s
tio
n
10
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
800
700
600
500
422 mJ
400
IAS = 65 A
88 A
300
200
100
15 mJ
0
25
100
50
75
100
125
150
175
Starting Tch - Starting Channel Temperature - °C
VDS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 0.52°C/W
0.1
0.01
10 μ
Single Pulse
TC = 25°C
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
4
Data Sheet D14148EJ8V0DS
10
100
1 000
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
ID - Drain Current - A
ID - Drain Current - A
500
TA = −25°C
25°C
75°C
150°C
175°C
1
0.1
400
300
VGS = 10 V
200
100
0.01
2
3
4
Pulsed
VDS = 10 V
6
7
5
0
10
TA = 175°C
75°C
25°C
−25°C
0.1
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
15
10
5
0
VGS = 10 V
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
0.01
0.01
2.0
1.5
VDS - Drain to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Source Voltage - V
1
1.0
0.5
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
ID = 44 A
0
0
2
4
6
8
10
12
16
18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
ID = 250 μA
4.0
3.0
2.0
1.0
0
−50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
Data Sheet D14148EJ8V0DS
5
8
7
6
VGS = 10 V
5
4
3
2
1
1000
VGS = 10 V
100
0V
10
1
50
0
100
0.1
0
150
Tch - Channel Temperature - °C
1000
Ciss
Coss
1000
Crss
1
10
100
tf
td(off)
100
td(on)
tr
10
VDD = 28 V
VGS = 10 V
RG = 1 Ω
1
0.1
VDS - Drain to Source Voltage - V
10
1.0
10
100
100
10
VGS
80
8
60
6
VDD = 44 V
4
40
20
2
VDS
0
IF - Diode Forward Current - A
6
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/μs
VGS = 0 V
100
1
0.1
10
1
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1.5
Figure15. SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
1.0
0.5
VF(S-D) - Source to Drain Voltage - V
20
40
60
80
ID = 88 A 0
100 120 140 160
QG - Gate Charge - nC
Data Sheet D14148EJ8V0DS
VGS - Gate to Source Voltage - V
−50
100
0.1
Pulsed
ID = 44 A
0
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
PACKAGE DRAWINGS (Unit: mm)
Note
1.3 ± 0.2
10.0 ± 0.3
No plating
7.88 MIN.
4
2
3
1.4 ± 0.2
0.7 ± 0.2
2.54 TYP.
9.15 ± 0.3
8.0 TYP.
8.5 ± 0.2
1
5.7 ± 0.4
1.0 ± 0.5
4
4.45 ± 0.2
0.025 to
0.25
P.
.5R
0
TY
R
0.8
2.54 TYP.
P.
TY
0.5 ± 0.2
0.75 ± 0.2
0.5 ±
2.8 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
1.Gate
2.Drain
2.5
3.Source
15.5 MAX.
5.9 MIN.
4
1
0.75 ± 0.1
2.54 TYP.
1.3 ± 0.2
12.7 MIN.
6.0 MAX.
1 2 3
0.5 ± 0.2
2.8 ± 0.2
0.75 ± 0.3
2.54 TYP.
2
3
1.0 ± 0.5
10 TYP.
Note
4.8 MAX.
1.3 ± 0.2
8.5 ± 0.2
1.3 ± 0.2
4.Fin (Drain)
12.7 MIN.
4.8 MAX.
φ 3.6 ± 0.2
10.0 TYP.
1.3 ± 0.2
3
4)TO-262 (MP-25 Fin Cut)
4
8ο
0.25
Note
10.6 MAX.
0.2
0 to
2.54
3)TO-220 (MP-25)
1.3 ± 0.2
2.54 ± 0.25
4.8 MAX.
10 TYP.
1.35 ± 0.3
2)TO-263 (MP-25ZK)
15.25 ± 0.5
1)TO-263 (MP-25ZJ)
3.0 ± 0.3
<R>
0.5 ± 0.2
2.8 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
Data Sheet D14148EJ8V0DS
7
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
6)TO-262 (MP-25SK)
1 2 3
0.8 ± 0.1
0.5 ± 0.2
2.5 ± 0.2
1.3 ± 0.2
1.27 ± 0.2
3.1 ± 0.3
4
4.45 ± 0.2
10.1 ± 0.3
15.9 MAX.
1.27 ± 0.2
2.54 TYP.
10.0 ± 0.2
13.7 ± 0.3
3
13.7 ± 0.3
1 2
4.45 ± 0.2
1.3 ± 0.2
3.1 ± 0.2
4
φ 3.8 ± 0.2
6.3 ± 0.3
2.8 ± 0.3
10.0 ± 0.2
8.9 ± 0.2 1.2 ± 0.3
5)TO-220 (MP-25K)
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.5 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Remark
Body
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14148EJ8V0DS
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
<R>
Reel side
MARKING INFORMATION
NEC
88N055
HE
<R>
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
MP-25ZJ, MP-25ZK
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Recommended
Condition Symbol
IR60-00-3
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
MP-25, MP-25K, MP-25SK,
Time: 10 seconds or less
MP-25 Fin Cut
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
MP-25ZJ, MP-25ZK,
Time (per side of the device): 3 seconds or less
MP-25K, MP-25SK
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 300°C or below
MP-25, MP-25 Fin Cut
Time (per side of the device): 3 seconds or less
THDWS
P350
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D14148EJ8V0DS
9
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
• The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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