DMP10H400SE 100V P-CHANNEL ENHANCEMENT MODE MOSFET INFORMATION ADVANCE PRODUCT NEW Product Summary RDS(ON) Max ID TA = +25C 250m @ VGS = -10V -2.3A 300m @ VGS = -4.5V -2.1A BVDSS -100V Features and Benefits Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control DC-DC Converters Power Management Functions Uninterrupted Power Supply Low Gate Drive Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMP10H400SEQ) Mechanical Data Applications Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP10H400SE-13 Notes: Case SOT223 Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW P400SE DMP10H400SE Document Number DS37841 Rev. 3 - 2 = Manufacturer’s Marking P400SE = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 5 = 2015) WW = Week (01 to 53) 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE Maximum Ratings (@TA = +25°C, unless otherwise specified.) INFORMATION ADVANCE PRODUCT NEW Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = -10V (Note 5) Steady State TC = +25°C TA = +25°C Value -100 ±20 -6.0 -2.3 -1.9 -10 ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) IS IDM Unit V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range PD RθJA PD RθJC TJ, TSTG TC = +25°C Value Unit 2.0 1.3 62 13.7 9.1 -55 to +150 W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -100 1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD -2.2 203 241 -0.9 -3.0 250 300 -1.2 V Static Drain-Source On-Resistance -1.0 V VDS = VGS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID =-5A VGS = 0V, IS = -5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 1239 42 28 13 8.4 17.5 2.8 3.2 9.1 14.9 57.4 34.4 25.2 24.5 pF VDS = -25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -60V, ID = -5A ns VDD = -50V, RG = 9.1, ID = -5A ns nC VGS = 0V, IS = -5A, di/dt = 100A/μs VGS = 0V, IS = -5A, di/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: m Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMP10H400SE Document Number DS37841 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE 8 10.0 VGS=-10V VDS=-5V VGS=-4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=-4.0V VGS=-5.0V 6.0 4.0 VGS=-3.5V 2.0 6 4 125℃ 85℃ 2 25℃ 150℃ -55℃ VGS=-3.2V 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 4.5 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 5 0.35 0.3 VGS=-4.5V 0.25 0.2 VGS=-10V 0.15 0.45 0.4 0.35 0.3 0.25 ID=-5.0A 0.2 0.15 0.1 0 0 2 4 6 8 10 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.1 VGS=-10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE PRODUCT NEW 8.0 150℃ 125℃ 0.4 85℃ 0.3 25℃ 0.2 -55℃ 0.1 1.9 VGS=-10V, ID=-5.0A 1.7 1.5 1.3 VGS=-4.5V, ID=-5.0A 1.1 0.9 0.7 0.5 0 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMP10H400SE Document Number DS37841 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature November 2015 © Diodes Incorporated 2.6 0.45 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 0.4 0.35 VGS=-4.5V, ID=-5.0A 0.3 0.25 VGS=-10V, ID=-5.0A 0.2 0.15 0.1 2.4 ID=-1mA 2.2 2 1.6 1.4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 8 VGS=0V, TJ=85℃ 6 VGS=0V, TJ=125℃ 4 VGS=0V, TJ=150℃ VGS=0V, TJ=25℃ 2 CT, JUNCTION CAPACITANCE (pF) 10000 10 IS, SOURCE CURRENT (A) ID=-250μA 1.8 -50 f=1MHz Ciss 1000 100 Coss VGS=0V, TJ=-55℃ Crss 10 0 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 100 ID, DRAIN CURRENT (A) RDS(ON) Limited 8 VGS (V) INFORMATION ADVANCE PRODUCT NEW DMP10H400SE 6 VDS=-60V, ID=-5A 4 2 10 PW =10ms 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMP10H400SE Document Number DS37841 Rev. 3 - 2 16 18 4 of 7 www.diodes.com PW =100ms PW =1s 0.1 0.001 0 PW =100μs 1 0.01 0 PW =1ms TJ(MAX)=150℃ PW =10s TC=25℃ DC Single Pulse DUT on 1*MRP board VGS= -10V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 November 2015 © Diodes Incorporated DMP10H400SE INFORMATION ADVANCE PRODUCT NEW r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=98℃ /W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) 100 1000 Figure 13. Transient Thermal Resistance DMP10H400SE Document Number DS37841 Rev. 3 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE Package Outline Dimensions INFORMATION ADVANCE PRODUCT NEW Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT223 D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 L b 0° e A A1 0° -1 7° 7° Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT223 X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X DMP10H400SE Document Number DS37841 Rev. 3 - 2 C 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE INFORMATION ADVANCE PRODUCT NEW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMP10H400SE Document Number DS37841 Rev. 3 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated