MA1114-1 MA1114-1 For PCS - 30W Power Amplifier DESCRIPTION 2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω) OUTLINE DRAWING The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power monitoring circuit. No. 3 mm 142 mm 1 Frequency 2 Output Power 3 Output RF modulation spectrum ; from the carrier 100 KHz 200 KHz 250 KHz 400 KHz 600 KHz to < 1200 KHz 1200 KHz to < 1800 KHz 1800 KHz to < 6000 KHz > 6000 KHz = MA1114-1 FEATURES 77 mm 3 mm 4 HOLES φ 3.5 mm Vg(–6V:PIN#12) Vdet(PIN#13) (out) GND(PIN#11) 40 mm APPLICATION Symbol Condition 148 mm 71 mm ■Specified +25/+10 Volt Chracteristics • RF Output Power : +45 dBm (typ.) • Harmonics : –65 dBc typ. ■Small Size : 77 × 148 × 40 mm3 ■50 Ohm Input/Output Impedances Items (Pin control) Vd(+10V:PIN#24) Symbol Condition ––– 1990 MHz +45 ––– ––– dBm ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– +0.5 –30 –33 –60 –70 dB dB dB dB dB ––– ––– –73 dB ––– ––– –75 dB ––– ––– –80 dB ––– ––– ––– ––– –36 –30 dBm dBm 5 Harmonics 2fo 3fo 4fo Pout = +45 dBm ––– ––– ––– –60 –65 –70 ––– ––– ––– dBc dBc dBc 6 Quiescent current Icq Pin = 0mW ––– ––– 1.5 A Vc(+25V:PIN#25) Standard Unit TC –40 ~ +70 °C Tstg –40 ~ +80 °C 1 Case temperature 2 Storage temperature 3 Collector Voltage VC +26.0 V 4 Drain Voltage Vd Vg = –6V +11.5 V 5 Gate Voltage Vg Vd = +10V –10.0 V 6 RF Input Power Pin –9.0 dBm – 98 – 1930 Spurious ; in-band out-band 1. Maximum Ratings Items Max Pout = +45 dBm Amplifier Specifications (MA1114-1) No. Type RF OUT 10 mm ■PCS (1930 ~ 1990 MHz) Base station Pout ––– Unit Min 4 25 PINs D-SUB RF IN f Standard – 99 –