Advance Technical Information XPTTM 650V IGBT GenX3TM IXYK200N65B3 IXYX200N65B3 VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 200A 1.70V 157ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 410 160 200 1100 A A A A IA EAS TC = 25°C TC = 25°C 100 1 A J G SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 0 Clamped Inductive Load ICM = 200 @VCE VCES A G = Gate C = Collector tsc (SCSOA) VGE = 15V, VCE = 400V, TJ = 150°C RG = 10, Non Repetitive 8 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1560 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 650 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC PLUS247 (IXYX) © 2015 IXYS CORPORATION, All Rights Reserved C E Tab E = Emitter Tab = Collector 6.0 V 25 μA 2 mA 1.40 1.56 International Standard Packages Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages = 100A, VGE = 15V, Note 1 TJ = 150°C G High Power Density Low Gate Drive Requirement Applications V TJ = 150°C IGES Tab Features TJ TJM Tstg TL TSOLD G C E ±100 nA 1.70 V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100697(12/15) IXYK200N65B3 IXYX200N65B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 60A, VCE = 10V, Note 1 46 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz RGi Gate Input Resistance Qg(on) Qge Qgc IC = 200A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 0 Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 0 Note 2 RthJC RthCS TO-264 Outline 78 S 10.9 554 173 nF pF pF 7 340 84 136 nC nC nC 60 108 5.00 370 157 4.00 ns ns mJ ns ns mJ 60 110 6.36 470 230 5.60 ns ns mJ ns ns mJ 0.15 0.096 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK200N65B3 IXYX200N65B3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 350 VGE = 15V 12V 11V 250 10V 9V I C - Amperes I C - Amperes 10V 250 9V 200 VGE = 15V 11V 300 150 8V 100 200 150 8V 100 50 7V 7V 50 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 300 1.8 VGE = 15V 13V 11V 10V 7 8 9 10 125 150 175 VGE = 15V 1.6 I C = 300A V CE(sat) - Normalized 9V 200 I C - Amperes 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 250 5 VCE - Volts VCE - Volts 150 8V 100 1.4 1.2 I C = 200A 1.0 7V 0.8 50 I C = 100A 6V 0 0 0.5 1 1.5 2 2.5 3 0.6 3.5 -50 4 -25 0 25 50 75 100 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6.0 250 TJ = 25ºC 5.5 5.0 200 I C - Amperes VCE - Volts 4.5 4.0 3.5 I C = 300A 3.0 150 TJ = 150ºC 25ºC - 40ºC 100 2.5 200A 2.0 50 1.5 100A 1.0 0 7 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXYK200N65B3 IXYX200N65B3 Fig. 7. Transconductance Fig. 8. Gate Charge 180 16 TJ = - 40ºC 160 14 VCE = 325V 12 I G = 10mA I C = 200A 25ºC 120 150ºC V GE - Volts g f s - Siemens 140 100 80 60 10 8 6 4 40 2 20 0 0 0 40 80 120 160 200 240 0 280 50 100 150 200 250 300 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 350 100,000 200 160 Cies 10,000 I C - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 120 80 Coes TJ = 150ºC 40 RG = 0Ω dv / dt < 10V / ns Cres 0 100 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE - Volts VCE - Volts 1 Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Trasient Thermal Impedance 10000 aaa 0.3 0.1 VCE(sat) Limit 1000 100µs 10 1ms TJ = 175ºC 1 Z(th)JC - K / W I D - Amperes 25µs 100 TC = 25ºC Single Pulse 0.001 10ms 0.1 1 0.01 10 100 1000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYK200N65B3 IXYX200N65B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Eoff 6 11 --- Eoff TJ = 150ºC , VGE = 15V 9 5 9 VCE = 400V 7 5 5 3 I C = 50A 1 10 15 20 25 4 5 TJ = 25ºC 3 3 1 2 50 30 55 60 65 70 RG - Ohms ---- VCE = 400V I C = 100A 420 7 380 6 340 5 4 4 I C = 50A 3 1 75 100 125 tfi tfi 1600 td(off) - - - - 1400 VCE = 400V 1200 300 1000 I C = 50A 260 800 I C = 100A 600 2 180 400 1 150 140 200 0 5 10 15 20 25 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 340 580 tfi 540 300 30 460 220 420 180 380 t f i - Nanoseconds TJ = 150ºC 260 500 I C = 50A 220 460 180 420 I C = 100A TJ = 25ºC 140 100 50 55 60 65 70 75 80 85 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 90 95 340 140 300 100 100 380 25 50 75 100 TJ - Degrees Centigrade 125 340 150 t d(off) - Nanoseconds 500 540 VCE = 400V t d(off) - Nanoseconds 300 580 td(off) - - - - RG = 0Ω , VGE = 15V VCE = 400V t f i - Nanoseconds 1 100 TJ = 150ºC, VGE = 15V td(off) - - - - RG = 0Ω , VGE = 15V 260 95 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 340 90 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance TJ - Degrees Centigrade 380 85 220 3 2 50 Eon - MilliJoules 5 25 80 t d(off) - Nanoseconds 6 E off - MilliJoules Eon RG = 0Ω , VGE = 15V 8 t f i - Nanoseconds Eoff 7 75 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 8 4 2 0 1 5 6 Eon - MilliJoules 7 0 ---- RG = 0Ω , VGE = 15V I C = 100A 3 Eon 7 TJ = 150ºC VCE = 400V Eon - MilliJoules Eoff - MilliJoules Eon - E off - MilliJoules 11 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYK200N65B3 IXYX200N65B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri 180 120 220 I C = 100A VCE = 400V 180 160 I C = 50A 100 140 80 120 60 100 40 80 20 60 0 40 5 10 15 20 25 80 58 TJ = 150ºC 70 56 60 54 50 52 50 55 60 65 70 75 80 85 90 95 50 100 70 66 VCE = 400V I C = 100A 100 62 80 58 I C = 50A 60 t d(on) - Nanoseconds t r i - Nanoseconds 60 TJ = 25ºC td(on) - - - - RG = 0Ω , VGE = 15V 120 90 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 62 VCE = 400V 40 30 RG - Ohms 140 64 t d(on) - Nanoseconds 120 td(on) - - - - 66 RG = 0Ω , VGE = 15V 100 140 0 tri 110 200 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 160 240 t r i - Nanoseconds 200 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 54 40 25 50 75 100 125 50 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_200N65B3(81) 12-21-15