Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV High Voltage Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode = 3000V = 1.00A 50 TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 3000 V VDGR TJ = 25C to 150C, RGS = 1M 3000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.00 A ID110 TC = 110C 0.65 A IDM TC = 25C, Pulse Width Limited by TJM 2.60 A PD TC = 25C 195 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 4.0 6.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247HV TO-247HV (IXTH) G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features High Blocking Voltage High Voltage Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 3000 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5A, Note 1 V 4.0 Applications V 100 nA TJ = 125C © 2014 IXYS CORPORATION, All Rights Reserved 25 A 250 A 50 Easy to Mount Space Savings High Power Density High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems DS100590A(6/14) IXTT1N300P3HV IXTH1N300P3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 0.4 VDS = 50V, ID = 0.5A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs RthJC RthCS 0.7 S 895 pF 48 pF pF 22 ns 35 ns 78 ns 60 ns 30.6 nC VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 20 (External) VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd E 17 Resistive Switching Times Qg(on) TO-268HV Outline 4.0 nC 15.7 nC 0.21 0.64 C/W C/W TO-247HV L2 3 E1 D 1 H 2 3 2 C e D1 D2 A1 L4 e A C2 D3 1 b L3 A2 L Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1.0 A ISM Repetitive, Pulse Width Limited by TJM 4.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1A, -di/dt = 100A/μs, VR = 100V 1.8 TO-247HV Outline E R 0P A A2 E1 0P1 Q S μs D1 D 4 D2 1 2 3 L1 D3 L Note: A3 2X A1 E2 E3 4X 1. Pulse test, t 300s, duty cycle, d 2%. e e1 b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 3X PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTT1N300P3HV IXTH1N300P3HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 1.0 1.4 VGS = 10V 7V 1.2 0.8 6V 1.0 0.7 I D - Amperes I D - Amperes VGS = 10V 6V 0.9 0.8 5.5V 0.6 0.4 0.6 5V 0.5 0.4 0.3 5V 0.2 0.2 0.1 4V 4V 0.0 0.0 0 3.0 10 20 30 40 50 60 70 80 90 0 100 40 60 80 100 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 3.0 VGS = 10V VGS = 10V 2.6 2.6 I D = 1A 2.2 1.8 RDS(on) - Normalized RDS(on) - Normalized 20 VDS - Volts I D = 0.5A 1.4 1.0 TJ = 125ºC 2.2 1.8 1.4 1.0 0.6 TJ = 25ºC 0.6 0.2 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 1.2 1.4 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 0.8 1.2 0.7 1.0 0.6 I D - Amperes I D - Amperes 0.8 0.6 0.5 TJ = 125ºC 25ºC 0.4 - 40ºC 0.3 0.4 0.2 0.2 0.1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2014 IXYS CORPORATION, All Rights Reserved 100 125 150 2.5 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 IXTT1N300P3HV IXTH1N300P3HV Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 3.0 1.2 TJ = - 40ºC 1.0 2.5 2.0 I S - Amperes g f s - Siemens 25ºC 0.8 125ºC 0.6 0.4 1.5 TJ = 125ºC 1.0 TJ = 25ºC 0.2 0.5 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.3 0.4 0.5 0.6 0.8 0.9 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 10 VDS = 1000V 8 I D = 0.5A f = 1 MHz Capacitance - PicoFarads 9 I G = 10mA 7 VGS - Volts 0.7 VSD - Volts I D - Amperes 6 5 4 3 Ciss 1,000 100 Coss 2 1 Crss 0 10 0 4 8 12 16 20 24 28 32 0 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXTT1N300P3HV IXTH1N300P3HV Fig. 12. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC 10 @ TC = 75ºC 10 RDS(on) Limit RDS(on) Limit 100µs 100µs I D - Amperes 1 I D - Amperes 1 1ms 10ms 0.1 1ms 0.1 DC 10ms 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 0.01 100ms 0.01 100 1,000 VDS - Volts © 2014 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_1N300P3(M4) 6-02-14-A