AP4804MT
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
CH-1
G1
Converter Application
▼ RoHS Compliant & Halogen-Free
D2/S1
CH-2
G2
Description
S2
AP4804 series are from Advanced Power
innovated design and silicon process technology to
achieve the lowest possible on-resistance and fast
switching performance. It provides the designer
with an extreme efficient device for use in a wide
range of power applications.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
BVDSS
40V
RDS(ON)
12.5mΩ
ID
BVDSS
RDS(ON)
ID
36A
40V
8mΩ
55A
G2
S2
S2
S2
G1
D1
D1
D1
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
.
Symbol
Parameter
Units
Rating
CH-1
CH-2
VDS
Drain-Source Voltage
40
40
V
VGS
Gate-Source Voltage
+20
+20
V
ID@TC=25℃
Drain Current (Chip Limited)
ID@TA=25℃
ID@TA=70℃
36
55
A
Drain Current, VGS @ 10V
3
11.8
16.9
A
Drain Current, VGS @ 10V
3
7
10
A
30
40
A
3.13
3.9
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rating
Parameter
CH-1
CH-2
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.2
3
℃/W
Rthj-a
3
40
32
℃/W
4
70
60
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-ambient
1
201710162
AP4804MT
o
CH-1 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=10A
-
-
12.5
mΩ
VGS=4.5V, ID=6A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
8
12.8
nC
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
4.5
-
ns
tr
Rise Time
ID=1A
-
19
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=15V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.1
4.2
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
nC
2
AP4804MT
o
CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=12A
-
-
8
mΩ
VGS=4.5V, ID=8A
-
-
10.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=8A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=20V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
7
-
ns
tr
Rise Time
ID=1A
-
19
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
26
-
ns
tf
Fall Time
VGS=10V
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
1065 1700
pF
Coss
Output Capacitance
VDS=15V
Crss
Rg
-
300
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
155
-
pF
Gate Resistance
f=1.0MHz
-
1
2
Ω
Min.
Typ.
IS=12A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=12A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec.
2
4.Surface mounted on 1 in copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4804MT
Channel-1
30
30
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
V G = 4.0V
20
10V
7.0V
6.0V
5.0V
o
T A =150 C
ID , Drain Current (A)
o
T A =25 C
10
0
V G =4.0V
20
10
0
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
16
I D =10A
V G =10V
I D =6A
RDS(ON) (mΩ)
14
.
Normalized RDS(ON)
T A =25 o C
1.6
1.2
12
0.8
0.4
10
2
4
6
8
-100
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
8
1.6
Normalized VGS(th)
I D =250uA
6
IS(A)
T j =150 o C
T j =25 o C
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4804MT
Channel-1
8
f=1.0MHz
800
6
600
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =6A
V DS =20V
4
2
400
200
C oss
C rss
0
0
0
2
4
6
8
10
12
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
41
45
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
ID (A)
10
100us
1
1ms
10ms
100ms
1s
DC
0.1
T A =25 o C
Single Pulse
.
Normalized Thermal Response (Rthja)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=70 oC/W
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
VG
ID , Drain Current (A)
40
QG
4.5V
30
QGS
QGD
T j =150 o C
20
o
T j =25 C
10
Charge
T j = -55 o C
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4804MT
Channel-2
40
30
10V
7.0V
6.0V
5.0V
V G =4.0V
30
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
20
20
10
10
0
0
0
1
2
3
4
0
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
10
I D =12A
V G =10V
I D =8A
8
.
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
0.4
6
2
4
6
8
-100
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
2.0
I D =250uA
10
Normalized VGS(th)
1.6
IS(A)
8
T j =150 o C
T j =25 o C
6
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4804MT
Channel-2
8
f=1.0MHz
1600
6
1200
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =8A
V DS =20V
4
800
400
2
C oss
C rss
0
0
0
4
8
12
16
20
1
24
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
41
45
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
ID (A)
10
100us
1
1ms
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
.
Normalized Thermal Response (Rthja)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=60 oC/W
Single Pulse
DC
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
V DS =5V
VG
ID , Drain Current (A)
50
QG
40
4.5V
30
QGS
QGD
o
T j =150 C
20
o
T j =25 C
10
Charge
T j = -55 o C
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7
AP4804MT
MARKING INFORMATION
Part Number
4804MT
YWWSSS
Package Code : MT
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
8