Diodes DMN2300UFL4-7 Ultra-small surface mount package Datasheet

DMN2300UFL4
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID max
TA = +25°C
•
Footprint of Just 1.3 mm2
•
Ultra Low Profile Package - 0.4mm Profile
(Note 6)
•
On Resistance <200mΩ
195mΩ @ VGS = 4.5V
2.11A
•
Low Gate Threshold Voltage
260mΩ @ VGS = 2.5V
1.83A
•
Fast Switching Speed
•
Ultra-Small Surface Mount Package
380mΩ @ VGS = 1.8V
1.51A
•
ESD Protected Gate 2KV
520mΩ @ VGS = 1.5V
1.29A
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
•
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Max RDS(on)
20V
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
•
Case: X2-DFN1310-6
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish – NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
ideal for high efficiency power management applications.
•
Load switch
D1
D2
G1
G2
Gate
Protection
Diode
S1
Gate
Protection
Diode
S2
Device Symbol
ESD PROTECTED TO 2kV
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
DMN2300UFL4-7
Notes:
Marking
23N
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
23N
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
23N = Product Type Marking Code
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DMN2300UFL4
Maximum Ratings @TA = +25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 6)
TA = +25°C
TA = +85°C
Unit
V
V
Value
0.53
1.39
238
90
-55 to +150
Unit
ID
Pulsed Drain Current (Note 7)
IDM
Thermal Characteristics
A
A
@TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Power Dissipation
Thermal Resistance, Junction to Ambient
PD
RθJA
Operating and Storage Temperature Range
Notes:
Value
20
±8
2.11
1.19
6.0
TJ, TSTG
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
P(PK), PEAK TRANSIENT POIWER (W)
100
90
Single Pulse
RθJA = 230°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * Rθ JA(t)
80
70
60
50
40
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 230°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transient Thermal Resistance
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10
100
1,000
September 2014
© Diodes Incorporated
DMN2300UFL4
Electrical Characteristics @TA = +25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1
10
V
µA
µA
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
RDS (ON)
-
-
-
|Yfs|
VSD
40
-
0.7
0.95
195
260
380
520
1.2
V
Static Drain-Source On-Resistance
0.45
-
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 300mA
VGS = 2.5V, ID = 250mA
VGS = 1.8V, ID = 100mA
VGS = 1.5V, ID = 50mA
VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
128.6
12.2
9.0
140
3.2
0.4
0.4
10
10
60
25
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Note:
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V,
ID = 1A
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
8. Short duration pulse test used to minimize self-heating effect.
2.0
2.0
VGS = 4.5V
VDS = 5V
VGS = 2.5V
VGS = 1.8V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.0V
1.5
VGS = 1.5V
1.0
0.5
1.5
1.0
TA = 150°C
0.5
TA = 125°C
VGS = 1.2V
TA = 85°C
TA = 25°C
TA = -55°C
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristic
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
5
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0
0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
3
September 2014
© Diodes Incorporated
DMN2300UFL4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.4
0.3
0.2
VGS = 2.5V
VGS = 4.5V
0.1
0
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
VGS = 2.5V
ID = 500mA
1.2
1.0
0.8
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 On-Resistance Variation with Temperature
TA = 125°C
TA = 150°C
0.2
TA = 85°C
TA = 25°C
TA = -55°C
0
0.25
0.5 0.75 1
1.25 1.5 1.75
ID, DRAIN CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
2
0.8
0.6
0.4
VGS = 2.5V
ID = 500mA
0.2
VGS = 4.5V
ID = 1.0A
0
-50
2.0
1.2
1.0
1.6
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.4
50
75 100 125 150
0
25
-25
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
-25
ID = 1mA
0.8
0.6
0.6
0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 1.0A
0.6
-50
VGS = 4.5V
2
1.6
1.4
0.8
ID = 250µA
0.4
0
0
25
50
75 100 125 150
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
Datasheet Number: DS35946 Rev. 2 - 2
TA = 25°C
0.8
0.4
0.2
DMN2300UFL4
1.2
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0
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Diode Forward Voltage vs. Current
September 2014
© Diodes Incorporated
DMN2300UFL4
1,000
100,000
IGSS, LEAKAGE CURRENT (nA)
IDSS, LEAKAGE CURRENT (nA)
TA = 125°C
100
TA = 85°C
10
TA = 25°C
TA = -55°C
1
10,000
TA = 150°C
TA = 125°C
1,000
TA = 85°C
TA = -55°C
10
1
2
4
6
8
10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current
vs. Drain-Source Voltage
20
TA = 25°C
100
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = 15V
ID = 1A
6
4
2
0
0
0.5
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 13 Gate-Charge Characteristics
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
3
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DMN2300UFL4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
X2-DFN1310-6
Dim Min Max Typ
A
0.40


A1
0
0.05 0.02
A3
0.13


b
0.10 0.20 0.15
D
1.25 1.38 1.30
d
0.25


D2
0.30 0.50 0.40
E
0.95 1.075 1.00
e
0.35


E2
0.30 0.50 0.40
f
0.10


L
0.20 0.30 0.25
Z
0.05


All Dimensions in mm
A1
A
A3
Z
R0
B
D2
.15
0
E2
E
d
L
e
d
f
z
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G2
X2
Y2
G1
b
Y1
G3
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
a
X1
Dimensions
G1
G2
G3
X1
X2
Y1
Y2
a
b
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Value (in mm)
0.16
0.17
0.15
0.52
0.20
0.52
0.375
0.09
0.06
September 2014
© Diodes Incorporated
DMN2300UFL4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
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