CYSTEKEC MTB20A04Q8-0-T3-G Dual n-channel enhancement mode power mosfet Datasheet

Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB20A04Q8
BVDSS
ID@ VGS=10V, TC=25°C
ID@ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=8A
RDSON@VGS=4.5V, ID=4A
40V
13.4A
8.4A
16mΩ(typ)
18mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & halogen-free package
Equivalent Circuit
Outline
SOP-8
MTB20A04Q8
D2
D2
D1
D1
G:Gate
S:Source D:Drain
Pin 1
S1
G1
S2
G2
Ordering Information
Device
MTB20A04Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A04Q8
CYStek Product Specification
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
VDS
VGS
ID
IDM
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Tj, Tstg
Limits
Unit
40
±20
13.4
9.5
8.4 (Note 2)
7.0 (Note 2)
54 (Note 1)
3
2.4 (Note 2)
1.2 (Note 3)
-55~+175
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
RθJC
Thermal Resistance, Junction-to-ambient, max
RθJA
Value
25
62.5 (Note 2)
125 (Note 3)
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3. Surface mounted on minimum copper pad, pulse width≤10s.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
BVDSS
VGS(th)
GFS
IGSS
40
1.0
-
7.6
16
18
2.5
±100
1
25
20
25
-
19.5
2.7
3.9
8.2
17.4
36.6
6
-
Unit
Test Conditions
Static
*1
IDSS
RDS(ON)
*1
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VDS =10V, ID=5A
VGS=±20V, VDS=0V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125°C
VGS =10V, ID=8A
VGS =4.5V, ID=4A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTB20A04Q8
nC
VDS=20V, ID=8A, VGS=10V
ns
VDS=20V, ID=8A, VGS=10V,
RG=3Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
797
69
55
-
-
0.75
9.4
5.7
8
24
1
-
pF
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 3/9
VGS=0V, VDS=20V, f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
IF=8A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB20A04Q8
CYStek Product Specification
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4V
ID, Drain Current (A)
25
20
VGS=3V
15
10
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
5
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
100
VSD, Source-Drain Voltage(V)
RDS(on) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
2.8
ID=8A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
2
80
60
40
20
2.4
VGS=10V, ID=8A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 16mΩ
0.4
0
0
0
MTB20A04Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0
5
10
15
20
25
VDS, Drain-Source Voltage(V)
-75 -50 -25
30
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25 50 75 100 125 150 175 200
Gate Charge Characteristics
10
VDS=15V
0.1
Ta=25°C
Pulsed
8
6
4
2
VDS=20V
ID=8A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
1ms
10ms
TA=25°C, Tj=175°C
VGS=10V, RθJA=62.5°C/W
Single Pulse
1s
DC
8
7
6
5
4
3
TA=25°C, VGS=10V,
RθJA=62.5°C/W
2
1
0
0.01
MTB20A04Q8
ID, Maximum Drain Current(A)
100μs
100ms
0.01
20
9
RDSON
Limited
1
0.1
8
12
16
Qg, Total Gate Charge(nC)
10
100
10
4
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
300
30
20
Power (W)
ID, Drain Current(A)
250
VDS=10V
25
15
200
150
10
100
5
50
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
TJ(MAX) =175°C
TA=25°C
RθJA=62.5°C/W
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB20A04Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB20A04Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB20A04Q8
CYStek Product Specification
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Date Code
B20
A04
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : prodcution serial number, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB20A04Q8
CYStek Product Specification
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