ETC1 HY23V16202D 1mx16/2mx8 bit cmos mask rom Datasheet

1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Description
The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit (byte mode) or
as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery
operation.
The large size of 16M bit memory density is ideal for character generator, data or program
memory in micro-processor application. The HY23V16202 is packaged 42pin DIP , 44 pin SOP, 44 pin
TSOP-II or 48 pin TSOP-I.
Pin Description
Key features
• Switchable Organization
Byte Mode : 2,097,152 X 8 bit
Word Mode : 1,048,576 X 16 bit
• Single 3.3V power supply operation
• Access Time : 100/120ns (Max)
• Standby Current : 50 (Max)
• Operating Current : 35 (Max)
• TTL compatible inputs and outputs
• 3-State outputs for wired-OR expansion
• Word or Byte switchable by BHE pin
• Fully static operation
• Package
HY23V16202D
: 42pin Plastic DIP(600 mil)
HY23V16202S
: 44pin Plastic SOP(500mil)
HY23V16202T
: 44pin Plastic TSOP-II(400mil)
HY23V16202M
: 48pin Plastic TSOP-I(12x20mm)
HY23V16202F
: 48pin Plastic TSOP-I(12x20mm)
Pin
A0~A19
Address inputs
Q0~Q14
Data Outputs
Q15/A-1
Output Q15(Word Mode)/
LSB Address(Byte Mode)
BHE
Byte High Enable input
(Word/Byte selection)
CEB*
Chip Enable input
OEB*
Output Enable input
VCC
Power supply
VSS
Ground
NC
No Connection
* User selectable polarity
Pin Configuration
A18
1
42
A19
A17
2
3
41
40
A8
4
5
6
39
38
37
A9
A10
A11
A12
7
36
A13
A7
A6
A5
A4
A3
A2
8
35
A14
A1
A0
CEB
9
10
34
33
A15
A16
BHE
VSS
OEB
Q0
11
12
42DIP
13
14
32
31
30
VSS
Q15/A-1
29
Q7
Q8
15
28
Q14
Q1
Q9
16
17
27
26
Q6
Q13
Q2
Q10
Q3
Q11
18
19
25
24
20
23
21
22
HY23V16202D
Rev0 Page 1 of 8
Function
Q5
Q12
Q4
VCC
NC
A18
1
44
2
3
4
43
42
41
5
6
40
39
A3
7
8
38
37
A2
9
36
A14
A1
A0
CEB
10
35
A15
A16
BHE
A17
A7
A6
A5
A4
VSS
OEB
11
12
44SOP
13
34
33
32
Q0
14
15
31
30
Q8
16
29
NC
A19
A8
A9
A10
A11
A12
A13
VSS
Q15/A-1
Q7
Q14
Q1
Q9
17
18
28
27
Q6
Q13
Q2
19
26
Q5
Q10
Q3
Q11
20
21
25
24
22
23
Q12
Q4
VCC
HY23V16202S
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CEB
VSS
OEB
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
34
11
12
44TSOP
33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
HY23V16202T
NC
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
BHE
A16
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CEB
1
48
2
47
3
46
4
45
5
44
6
43
7
42
8
41
9
40
10
39
11
38
12
13
48TSOP-I
(ROM TYPE)
37
36
14
35
15
34
16
33
17
32
18
31
19
30
20
29
21
28
22
27
23
26
24
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
VSS
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
VCC
NC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OEB
VSS
VSS
HY23V16202M
1
48
2
47
3
46
4
45
5
44
6
43
7
42
8
41
9
40
10
39
11
12
13
38
48TSOP-I
(FLASH TYPE)
37
36
14
35
15
34
16
33
17
32
18
31
19
30
20
29
21
28
22
27
23
26
24
25
A16
BHE
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OEB
VSS
CEB
A0
HY23V16202F
Block Diagram
A0~A19
X-PREDEC
Y-PREDEC
X-DECODER
ADDRESS
BUFFER
MEMORY ARRAY
16MBIT ROM CELL
Y-DECODER
SENSE AMP
CEB
OEB
BHE
CONTROL
CIRCUIT
OUTPUT CIRCUIT
Q0~Q15/A-1
Rev0 Page 2 of 8
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
TA
Ambient Operating Temperature
-10 ~ 80
O
C
TSTG
Storage Temperature
-55 ~ 150
O
C
VCC
Supply Voltage to Ground Potential
-0.3 ~ 4.5
V
VOUT
Output Voltage
-0.3~Vcc+0.3
V
VIN
Input Voltage
-0.3~Vcc+0.3
V
Stress above those listed under “absolute maximum ratings” may cause permanent damage to the
device. These are stress ratings only. Functional operation of this device at these or any other
conditions above those indicated in the operational sections of this specification is not implied and
exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions(VCC=3.3·0.3V, TA=0~70O C )
Symbol
Parameter
Min
Typ
Max
Unit
Vcc
Supply Voltage
3.0
3.3
3.6
V
Vss
Supply Voltage
0
0
0
V
VIH
Input High Voltage
2.2
Vcc+0.3
V
VIL
Input Low Voltage
-0.3
0.8
V
DC Electrical Characteristics(VCC=3.3·0.3V, TA=0~70 O C )
Symbol
Parameter
Condition
VOH
Output High Voltage
IOH=-0.4mA
VOL
Output Low Voltage
IOL=2.1mA
IIL
Input Leakage Current
VIN=0V to VCC
IOL
Output Leakage Current
VOUT=0V to VCC
ICC
Operating Supply Current
CEB=OEB=VIL
All Output Open
(tRC=100ns)
Min
Typ
Max
2.4
Unit
V
0.4
V
10
uA
10
uA
35
mA
ISB1
Standby Current(TTL)
CEB=VIH, all Output Open
500
uA
ISB2
Standby Current(CMOS)
CEB=VCC, all Output Open
50
uA
Rev0 Page 3 of 8
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Capacitance(TA=25O C , f=1.0MHz)
Symbol
Parameter
Condition
Min
Max
Unit
CI
Input Capacitance
VIN = 0V
10
pF
CO
Output Capacitance
VOUT = 0V
10
pF
Capacitance is periodically sampled and not 100% tested
Function Table
MODE
CEB/CE
Standby
OEB/OE
BHE
X
X
High-Z
H
Data Out
H/L
16bit
Operating
L/H
Q8 ~ Q14
Q15 ~A-1
L
L
High-Z
Active
Data output
(upper 8bit)
Output
Disable
H/L
POWER
Standby
Data output
(lower 8bit)
L/H
8bit
Operating
Q0 ~ Q7
X
H
High-Z
X
AC Characteristics(VCC=3.3·0.3V, TA=0~70 O C )
100ns
Symbol
120ns
Parameter
Unit
Min
Max
Min
Max
tRC
Read cycle time
tACE
Chip enable access time
100
120
ns
tAA
Address access time
100
120
ns
tAOE
Output enable access time
50
60
ns
tOH
Output hold time from address change
tHZ
Output or chip disable to output High-Z
tLZ
Output or chip Enable to output Low-Z
100
AC Test Condition
• Input pulse level
• Input rise and fall time
• Input and output timing level
• Output load
Rev0 Page 4 of 8
0.4V to 2.4V
10ns
1.5V
1 TTL gate and CL=100pF
0
ns
0
20
10
ns
120
20
10
ns
ns
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Timing Waveforms
Word Mode(BHE=VIH)
tRC
ADD
A0~A19
ADD1
ADD2
tHZ
tACE
CEB:ACTIVE LOW
CE/CEB
CE:ACTIVE HIGH
tAOE
tAA
OEB:ACTIVE LOW
OE/OEB
OE:ACTIVE HIGH
tLZ
tLZ
Q0~Q15
tOH
VALID
Byte Mode(BHE=VIL)
VALID
tRC
ADD
A0~A19
A-1
ADD1
ADD2
tHZ
tACE
CEB:ACTIVE LOW
CE/CEB
CE:ACTIVE HIGH
tAOE
tAA
OEB:ACTIVE LOW
OE/OEB
OE:ACTIVE HIGH
tLZ
Q0~Q7
Q8~Q15
Rev0 Page 5 of 8
tLZ
tOH
VALID
HIGH-Z
VALID
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Package Dimension
Unit : mm
44SOP
O
0~10
0.730 MIN
1.030 MAX
16.050
BSC
12.800 MAX
12.400 MIN
28.000 MIN
28.550 MAX
0.090 MIN
0.250 MAX
2.500 MIN
2.900 MAX
0.250 MIN
1.270
0.450 MAX
BSC
3.100 MAX
42DIP
O
0~15
50.292 MIN
15.875 MAX
15.240 MIN
14.732 MAX
12.319 MIN
53.213 MAX
0.762 MIN
1.778 MAX
0.203 MIN
0.381 MAX
0.381 MIN
5.080 MAX
0.356 MIN
0.559 MAX
Rev0 Page 6 of 8
2.540
BSC
2.540 MIN
4.572 MAX
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Unit : mm
44TSOP-II
O
0~8
#1
0.950 MIN
1.050 MAX
1.200 MAX
0.260 MIN
0.450 MAX
Rev0 Page 7 of 8
0.800
BSC
0.400 MIN
0.600 MAX
0.050 MIN
0.150 MAX
BASIC
BASIC
10.160
#44
11.760
18.410
BASIC
0.120 MIN
0.210 MAX
1MX16/2MX8 BIT
CMOS MASK ROM
HY23V16202
Unit : mm
48TSOP-I
0~8
0.170 MIN
0.100 MIN
1.050 MAX
0.050 MIN
0.150 MAX
1.200 MAX
0.950 MIN
0.200 MAX
11.910 MIN
12.120 MAX
0.700 MAX
0.400 MIN
18.300 MIN
18.500 MAX
0.270 MAX
20.150 MAX
19.850 MIN
0.500
BSC
Rev0 Page 8 of 8
O
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