, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D41K Series -30 - (-50) VOLTS -2 AMP, 10 WATTS VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) COMPLEMENTARY TO THE D40K SERIES 036M<1Q Applications: • • • • • • • • • Driver Regulator Touch Switch l.C. Driver Capacitor Multiplier Audio Output Relay Substitute Oscillator Servo-Amplifier TVPt TERM 1 TERM 2 TES*. 3 TAB TO-202 EMITTER BASE COUECTOR COILECTOP maximum ratings O~A = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peak*1' Base Current — Continuous Total Power Dissipation @ TA = 25° C @T C = 25°C Operating and Storage Junction Temperature Range D41K1.3 -30 -13 -30 -2 -3 .2 -1.67 -10 D41K2.4 -50 -13 -50 -2 -3 .2 -1.67 -10 UNITS Volts Volts Volts A A A Watts -55to+150 -55 to +150 °C RflJC 75 12.5 75 12.5 °c/w TL 260 260 °c SYMBOL VCEO VCES VEBO »c 'CM IB F'D TJ. TSTG thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: Vfc" from Case for 5 Seconds RWA °C/W (1) Pulse Test: Pulse Width = 300ms. Duty Cycle < 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors electrical Characteristics (Tc = 25° C) (unless otherwise specified) SYMBOL MIN TYP MAX VCEO -30 -50 — — Collector Cut-off Current (VCE = Rated VCES) ICES — — -.5 MA Emitter Cutoff Current (VEB = -13V) IEBO — — -0.1 /«A hFE 10K — — — hFE 1K 1K — — — — — 1.5 1.5 Volts V — — 2.5 2.5 Volts CCBO — 9 15 pF h — 100 — MHz CHARACTERISTIC UNIT off characteristics*1' Collector-Emitter Voltage l c =10mA) D41K1.3 D41K2.4 Volts on characteristics DC Current Gain (ic = -200mA, VCE = -5V) (IC = -1 .5A, VCE = -5V) (|C = -1A, VCE = -5V) Collector-Emitter Saturation Voltage (IC = -1.5A, IB = -3mA) (lc = -1 -OA, 1 B = -2mA) Base-Emitter Saturation Voltage (IC = -1 .5A, IB = -3mA) (lc = -1A,lB = -2mA) D41 K1 ,2 D41K3.4 D41K1.2 VcE(sat) D41 K3,4 D41 K1 ,2 D41K3.4 VBE(sat) dynamic characteristics Collector Capacitance (VCE = -10V, f=1MHz) Current-Gain — Bandwidth Product (lc = -20mA, VCE = -5V) (1) Pulse Test: PW < 300ms Duty Cycle < 2%. Q4IK It COLLCCTOH CUftftCNT IAMC3I FIG. 2 TYPICAL CcBO vs. VOLTAGE FIG. 1 TYPICAL hFE vs. IC -• -O -10 -40 Ve, COLLCCTON-I«»C VOLTAflC - VOLTS -<0