NSM4002MR6 Dual NPN Transistors for Driving LEDs NSM4002MR6 contains a single two NPN transistors. The base of the Q2 NPN transistor is internally connected to the collector of the Q1 NPN transistor. This device is designed to replace a discrete solution that is common for providing a constant current by integrating these two components into a single device. NSM4002MR6 is housed in a SC−74 package which is ideal for surface mount applications in space constrained applications. www.onsemi.com Dual NPN Transistors for Driving LEDs Features • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications 6 5 4 6, 5 Q2 Q2 Q1 • LED Lighting • Driver Circuits 4 1 Q1 2 1 3 2 3 MAXIMUM RATINGS Q1 (TA = 25°C) Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current − Continuous 4 6 5 1 2 3 SC−74 CASE 318F MAXIMUM RATINGS Q2 (TA = 25°C) Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 50 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 500 mAdc Rating Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Max Unit 260 2.08 mW mW/°C 480 °C/W 300 2.4 mW mW/°C RqJA (Note 2) 416 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM 1AM MG G 1AM M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSM4002MR6T1G SC−74 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. FR− 4, 100 mm2, 2 oz. Cu. 2. FR− 4, 500 mm2, 2 oz. Cu. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 1 1 Publication Order Number: NSM4002MR6/D NSM4002MR6 Table 1. ELECTRICAL CHARACTERISTICS Q1 (TA = 25°C, unless otherwise noted) Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc ICEX − 50 nAdc IBL − 50 nAdc 40 70 100 60 30 − − 300 − − − − 0.20 0.30 0.65 − 0.85 0.95 fT 300 − MHz Output Capacitance (VCB = 5.0 V, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cobo − 8.0 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VEB(OFF) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(OFF) = 3.0 Vdc) ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 100 mA, VCE = 1.0 V) (IC = 1.0 mA, VCE = 1.0 V) (IC = 10 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) (IC = 100 mA, VCE = 1.0 V) Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 50 mA, IB = 5.0 mA) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 50 mA, IB = 5.0 mA) VBE(sat) Cutoff Frequency (IC = 10 mA, VCE = 20 V, f = 100 MHz) V V Table 2. ELECTRICAL CHARACTERISTICS Q2 (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 45 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Emitter−Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc ICBO − − 0.1 mAdc 250 40 − − 600 − − − 0.7 − − 1.2 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) Collector *Emitter Saturation Voltage (Note 3) (IC = 500 mA, IB = 50 mA) VCE(sat) Base*Emitter Turn−on Voltage (Note 3) (IC = 500 mA, VCE = 1.0 V) VBE(on) Cutoff Frequency (IC = 10 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz V V fT 100 − − MHz Cobo − 10 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. www.onsemi.com 2 NSM4002MR6 Application Section Introduction based on the biasing current. To determine the Rset value simply divide the VBE voltage by the desired driving current. The NSM4002MR6 is designed to be used as a constant current driver for LEDs. The two resistors in Figure 1 are external from the NSM4002MR6 to allow for customization. Rset controls the current through the load, and R1 controls the bias current. Selecting R1 The R1 resistor is used to set the biasing current. The biasing current is split between the base of Q2 and the collector of Q1. When desiring the lowest overhead voltage R1 should be set as high as possible. It is important to ensure it is not set too high so that Q2 falls out of saturation. However, a lower R1 value will drive more current through Q1. This will reduce the change in the driving current as temperature is increased. It will also allow a higher driving current to be achieved while maintaining good current regulation. The side affect of a lower R1 value is that it reduces the overall efficiency because more power is being used in the driving circuit. Input Votlage, Vs The maximum input voltage, Vs, is determined by the load. No more than 45 V can be applied across Q2. This leads to: V s(max) + V Load ) 45 V (eq. 1) Figure 1. Typical Application Schematic Overhead Voltage Selecting Rset The overhead voltage of this device to reach full current regulation is the combination of the VBE voltages of the two transistors. Under typical conditions this overhead voltage will typically be 1.4 V. The Rset resistor is used to set the driving current of the load. It is connected across the Base−Emitter junction of Q1. This VBE voltage is what sets up the constant voltage across the Rset resistor. Figure 5 gives the typical values of VBE www.onsemi.com 3 NSM4002MR6 TYPICAL CHARACTERISTICS − Q1 1000 h FE, DC CURRENT GAIN TJ = +150°C VCE = 1.0 V +25°C 100 -55°C 10 1 0.1 1.0 100 10 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region www.onsemi.com 4 2.0 3.0 5.0 7.0 10 NSM4002MR6 TYPICAL CHARACTERISTICS − Q1 0.7 1.4 IC/IB = 10 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.8 150°C 0.6 25°C 0.5 −55°C 0.4 0.3 0.2 0.1 0.01 0.1 −55°C 0.8 25°C 0.6 150°C 0.4 0.0001 1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs. Collector Current 1.4 1.0 VCE = 1 V +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) 0.001 1.0 0.8 1.0 0.2 0 1.2 1.2 −55°C 25°C 0.6 qVC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C 0.4 150°C 0.2 0.0001 qVB FOR VBE(sat) -1.5 0.001 0.01 0.1 -2.0 1 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 6. Base Emitter Voltage vs. Collector Current Figure 7. Temperature Coefficients www.onsemi.com 5 180 200 NSM4002MR6 TYPICAL CHARACTERISTICS − Q2 300 1 hFE, DC CURRENT GAIN 200 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C 25°C −55°C 100 150°C 25°C −55°C 0.1 0.01 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Voltage vs. Collector Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 Figure 12. Saturation Region www.onsemi.com 6 100 1 NSM4002MR6 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N D 6 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. E HE 1 DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 L A1 0° 10° 0° 10° SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSM4002MR6/D