Microsemi MV32006 Gaas varactor diodes hyperabrupt Datasheet

GaAs Varactor Diodes
Hyperabrupt
®
TM
MV30011 – MV34010
Features
●
High Q Values for Higher Frequency Performance
●
Large Tuning Ratios
●
Low Reverse Current
●
Gamma Values to 1.5
●
Available as Bondable Chips and as
Packaged Diodes
●
Available in Chip-on-Board Packaging
●
Custom Designs Available
Applications
Description
●
VCOs
●
Phase-Locked Oscillators
●
High Q Tunable Filters
●
Phase Shifters
●
Pre-Selectors
Microsemi’s GaAs hyperabrupt junction varactor
diodes are fabricated from epitaxial layers grown
at Microsemi by the Chemical Vapor Deposition
technique. The layers are processed at using
proprietary techniques resulting in varactors with
constant gamma, high Q factor and repeatable
tuning curves. These varactors are available in a
variety of microwave ceramic packages or
bondable chips for operation from UHF to
millimeter wave frequencies.
Maximum Ratings
Reverse Voltage
Breakdown Voltage
Forward Current
50 mA @ 25°C
Incident Power
+20 dBm @ 25°C
Operating Temperature
-55°C to +175°C
Storage Temperature
-55°C to +200°C
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
1
The MS3000 Series of products are
supplied with a RoHS complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright  2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs Varactor Diodes
Hyperabrupt
®
TM
MV30011 – MV34010
High Q Constant Gamma Tuning Varactors (Specifications @ 25°C)
Gamma = 1.25
Gamma = 0.75
Part
Number
CT @ 4 V
± 10%
(pF)1, 3, 4
Typ.
CT @2V /
CT @20V5
Min.
VBR @
10 A (V)
Typ.
Q @ -4 V2
Part
Number
MV32001
0.6
2.8
22
4000
MV31001
MV32002
1.0
3.1
22
3000
MV32003
1.2
3.2
22
3000
MV32004
1.5
3.3
22
MV32005
1.8
3.4
MV32006
2.2
MV32007
2.5
MV32008
Typ.
CT @2V /
CT @12V5
Min.
VBR @
10 A (V)
Typ.
Q @ -4 V2
0.6
4.2
15
4000
MV31002
1.0
5.1
15
3000
MV31003
1.2
5.4
15
3000
3000
MV31004
1.5
5.7
15
3000
22
3000
MV31005
1.8
5.9
15
3000
3.5
22
3000
MV31006
2.2
6.2
15
3000
3.6
22
2500
MV31007
2.5
6.3
15
2000
3.0
3.6
22
2500
MV31008
3.0
6.5
15
2000
MV32009
3.6
3.7
22
2000
MV31009
3.6
6.7
15
2000
MV32010
4.5
3.8
22
1500
MV31010
4.5
6.8
15
1500
Typ.
CT @2V /
CT @20V5
Min.
VBR @
10 A (V)
Typ.
Q @ -4V2
Part
Number
Gamma = 1.00
Part
Number
MV30001
CT @4 V
± 10%
(pF)1, 3, 4
0.6
Typ.
CT @2V /
CT @12V5
Min.
VBR @
10 A (V)
Typ.
Q @ -4V2
3.2
15
4000
CT @4V
± 10%
(pF)1, 3, 4
CT @4 V
± 10%
(pF)1, 3, 4
MV31011
0.5
5.5
22
4000
MV31012
0.7
6.5
22
4000
MV31013
1.0
7.7
22
3000
1.2
8.3
22
3000
MV30002
1.0
3.7
15
3000
MV31014
MV30003
1.2
3.8
15
3000
MV31015
1.5
9.1
22
3000
MV30004
1.5
4.0
15
3000
MV31016
1.8
9.6
22
3000
MV30005
1.8
4.1
15
3000
MV31017
2.0
9.9
22
3000
MV30006
2.2
4.2
15
3000
MV31018
2.2
10.2
22
3000
MV30007
2.5
4.3
15
2500
MV30008
3.0
4.4
15
2500
MV31019
2.7
10.8
22
2000
MV30009
3.6
4.5
15
2000
MV31020
3.3
11.3
22
2000
MV30010
4.5
4.5
15
1500
MV31021
3.7
11.5
22
2000
MV31022
4.7
12.0
22
1500
Typ.
CT @2V /
CT @20V5
Min.
VBR @
10 A (V)
MV31023
5.6
12.3
22
1500
Typ.
Q @ -4V2
MV31024
6.8
12.6
22
1500
MV31025
8.2
12.9
22
1500
MV31026
10.0
13.1
22
1500
Part
Number
CT @4 V
± 10%
(pF)1, 3, 4
MV30011
0.6
3.9
22
4000
MV30012
1.0
4.6
22
3000
MV30013
1.2
4.9
22
3000
MV30014
1.5
5.2
22
3000
MV30015
1.8
5.4
22
3000
MV30016
2.2
5.6
22
3000
MV30017
2.5
5.8
22
2500
MV30018
3.0
6.0
22
2500
MV30019
3.6
6.1
22
2000
MV30020
4.5
6.3
22
1500
Copyright  2008
Rev: 2009-05-11
Capacitance is specified at 1 MHz.
Measured by DeLoach Technique and referenced to 50 MHz.
Tightened tolerances available upon request.
4
Package capacitance is 0.15 pF is included in the above specification.
5
The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary
depending upon package selection.
1
2
3
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
GaAs Varactor Diodes
Hyperabrupt
®
TM
MV30011 – MV34010
High Q Constant Gamma Tuning Varactors (Specifications @ 25°)
Gamma = 1.50
Part
Number
CT @ 4 V
± 10%
(pF)1, 3, 4
Typ.
CT @ 2 V
CT @ 12V5
Min.
VBR @
10 A (V)
Typ.
Q @ -4 V2
MV34001
0.5
4.5
15
3000
MV34002
1.0
5.9
15
2500
MV34003
1.8
7.1
15
2500
MV34004
2.8
7.3
15
2500
MV34005
2.2
7.4
15
1800
MV34006
2.5
7.6
15
1800
MV34007
3.0
7.9
15
1800
MV34008
3.8
8.1
15
1800
MV34009
4.5
8.3
15
1200
MV34010
10.0
8.9
15
1200
Capacitance is specified at 1 MHz.
Measured by DeLoach Technique and referenced to 50 MHz.
Tightened tolerances available upon request.
4
Package capacitance is 0.15 pF is included in the above specification.
5
The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary
depending upon package selection.
1
2
3
Copyright  2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
GaAs Varactor Diodes
Hyperabrupt
TM
Copyright  2008
Rev: 2009-05-11
®
MV30011 – MV34010
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
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