Cypress CY27H010-35PC 128k x 8 high-speed cmos eprom Datasheet

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1CY 27H0 10
CY27H010
128K x 8 High-Speed CMOS EPROM
Features
try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I
packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available
in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.
• CMOS for optimum speed/power
• High speed
— tAA = 25 ns max. (commercial)
— tAA = 35 ns max. (military)
• Low power
— 275 mW max.
•
•
•
•
•
— Less than 85 mW when deselected
Byte-wide memory organization
100% reprogrammable in thewindowed package
EPROM technology
Capable of withstanding >2001V static discharge
Available in
— 32-pin PLCC
— 32-pin TSOP-I
— 32-pin, 600-mil plastic or hermetic DIP
— 32-pin hermetic LCC
The CY27H010 is equipped with a power-down chip enable
(CE) input and output enable (OE). When CE is deasserted,
the device powers down to a low-power stand-by mode. The
OE pin three-states the outputs without putting the device into
stand-by mode. While CE offers lower power, OE provides a
more rapid transition to and from three-stated outputs.
The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The
EPROM cell requires only 12.75 V for the supervoltage and
low programming current allows for gang programming. The
device allows for each memory location to be tested 100%,
because each location is written to, erased, and repeatedly
exercised prior to encapsulation. Each device is also tested
for AC performance to guarantee that the product will meet DC
and AC specification limits after customer programming.
The CY27H010 is read by asserting both the CE and the OE
inputs. The contents of the memory location selected by the
address on inputs A16–A0 will appear at the outputs O7–O0.
Functional Description
The CY27H010 is a high-performance, 1-megabit CMOS
EPROM organized in 128 Kbytes. It is available in indus-
Logic Block Diagram
Pin Configurations
DIP
Top View
A0
O0
A1
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
A2
O1
A3
PROGRAMMABLE
ARRAY
A4
O2
A5
O3
A6
A7
A8
MULTIPLEXER
ADDRESS
DECODER
O4
A9
O5
A10
A11
A12
O6
POWER DOWN
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3
H010–2
LCC/PLCC
Top View
O7
A14
A15
A16
A7
A6
A5
A4
A3
A2
A1
A0
O0
CE
OE
OUTPUT ENABLE
DECODER
H010–1
4 3 2 1 32 31 30
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
14151617 181920
A14
A13
A8
A9
A11
OE
A10
CE
O7
H010–3
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
• CA 95134 •
408-943-2600
August 1994 – Revised March 1997
CY27H010
Pin Configurations (continued)
TSOP
Top View
A11
A9
A8
A13
A14
NC
PGM
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
1
2
32
31
30
3
4
5
6
7
29
28
27
26
25
24
23
22
21
20
19
18
17
8
9
10
11
12
13
14
15
16
OE/VFY
A10
CE
O7
O6
O5
O4
O3
GND
O2
O1
O0
A0
A1
A2
A3
H010–4
Selection Guide
27H010–25
27H010–30
27H010–35
25
30
35
30
30
40
Maximum Access Time (ns)
CE Access Time (ns)
Com’l
CE Access Time (ns)
Mil
OE Access Time (ns)
Com’l
OE Access Time (ns)
Mil
ICC[1] (mA)
Power Supply Current
Com’l
ISB[2] (mA)
Stand-by Current
Com’l
40
12
20
20
20
75
75
15
15
Mil
50
85
Mil
15
25
Maximum Ratings
UV Erasure................................................... 7258 Wsec/cm 2
(Above which the useful life may be impaired. For user guidelines, not tested.)
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Latch-Up Current ..................................................... >200 mA
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
Operating Range
DC Voltage Applied to Outputs
in High Z State ............................................... –0.5V to +5.5V
Range
Ambient
Temperature
VCC
DC Input Voltage............................................ –3.0V to +7.0V
Commercial
0°C to +70°C
5V ± 10%
Transient Input Voltage ................................–3.0V for <20 ns
Industrial[3]
–40°C to +85°C
5V ± 10%
DC Program Voltage .....................................................13.0V
Military[4]
–55°C to +125°C
5V ± 10%
Note:
1. VCC = Max., IOUT = 0 mA, f=10 MHz.
2. VCC = Max., CE = VIH.
3. Contact a Cypress representative for industrial temperature range specification.
4. TA is the “instant on” case temperature.
2
CY27H010
Electrical Characteristics Over the Operating Range[5, 6]
27H010–25
27H010–30
Parameter
Description
Test Conditions
Min.
Max.
VOH
Output HIGH
Voltage
VCC = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VIH
Input HIGH Level
VCC = Min., IOL = 12.0 mA
Guaranteed Input Logical HIGH
Voltage for All Inputs
VIL
Input LOW Level
Guaranteed Input Logical LOW
Voltage for All Inputs
IIX
Input Leakage
Current
GND < VIN < VCC
–10
+10
IOZ
Output Leakage
Current
GND < VOUT < VCC,
Output Disable
–10
+10
ICC
Power Supply Current
VCC=Max.,
IOUT=0 mA,
f=10 MHz
Com’l
VCC=Max.,
CE = VIH
Com’l
ISB
Stand-By Current
27H010–35
Min.
2.4
0.45
2.0
Max.
Unit
2.4
VCC+0.5
V
0.45
V
VCC+0.5
V
0.8
V
–10
+10
µA
–10
+10
µA
50
mA
85
mA
15
mA
25
mA
2.0
0.8
75
Mil
15
Mil
Capacitance[6]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
Unit
10
pF
12
pF
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Notes:
5. See the last page of this specification for Group A subgroup testing information.
6. See Introduction to CMOS PROMs in this Data Book for general information on testing.
AC Test Loads and Waveforms
R1 318 Ω
R1 318 Ω
5V
ALL INPUT PULSES
5V
OUTPUT
R2
197Ω
30 pF
INCLUDING
JIG AND
SCOPE
3.0V
90%
OUTPUT
R2
197Ω
5 pF
Equivalent to:
OUTPUT
GND
10%
≤ 3 ns
INCLUDING
JIG AND
SCOPE
(a)
90%
10%
(b)
≤ 3 ns
H010–5
H010–6
THÉVENIN EQUIVALENT
121Ω
1.91V
Switching Characteristics Over the Operating Range
27H010–25
Parameter
Description
Min.
Max.
27H010–30
Min.
Max.
27H010–35
Min.
Max.
Unit
tAA
Address to Output Valid
25
30
35
ns
tOE
OE Active to Output Valid
12
20
20
ns
tHZOE
OE Inactive to High Z
12
20
20
ns
3
CY27H010
Switching Characteristics Over the Operating Range (continued)
27H010–25
Parameter
Description
Min.
Max.
27H010–30
Min.
27H010–35
Max.
Min.
Max.
Unit
tCE
CE Active to Output Valid
30
30
40
ns
tHZCE
CE Inactive to High Z
12
20
20
ns
tPU
CE Active to Power-Up
tPD
CE Inactive to Power-Down
tOH
Output Data Hold
0
0
0
30
0
ns
35
40
0
ns
0
ns
Switching Waveform
ICC
tPD
tPU
CE
OE
ADDR A
A0 – A16
tAA
ADDR B
tAA
tHZOE
tCE
O0 – O7
tOE
tOH
DATA A
DATA B
tHZCE
DATA B
H010–7
Erasure Characteristics
nent damage may result if the EPROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm2
is the recommended maximum dosage.
Wavelengths of light less than 4000 Angstroms begin to erase
the CY27H010 in the windowed package. For this reason, an
opaque label should be placed over the window if the EPROM
is exposed to sunlight or fluorescent lighting for extended periods of time.
Programming Modes
Programming support is available from Cypress as well as
from a number of third-party software vendors. For detailed
programming information, including a listing of software packages, please see the PROM Programming Information located
at the end of this section. Programming algorithms can be obtained from any Cypress representative.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Angstroms for a minimum dose (UV intensity multiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mW/cm2 power rating, the exposure
time would be approximately 35 minutes. The CY27H010
needs to be within 1 inch of the lamp during erasure. Perma-
4
CY27H010
Table 1. Programming Electrical Characteristics
Parameter
Description
Min.
Max.
Unit
12.5
13
V
50
mA
Programming Input Voltage HIGH
3.0
VCC
V
VILP
Programming Input Voltage LOW
–0.5
0.4
V
VCCP
Programming VCC
6.0
6.5
V
VPP
Programming Power Supply
IPP
Programming Supply Current
VIHP
Table 2. Mode Selection
Pin Function[7]
Mode
CE
OE
PGM
VPP
A0
A9
Data
VIL
VIL
X
X
A0
A9
Dout
X
VIH
X
X
X
X
High Z
Stand-by
VIH
X
X
X
X
X
High Z
Program
VILP
VIHP
VILP
VPP
A0
A9
Din
Program Verify
VILP
VILP
VIHP
VPP
A0
A9
Dout
VIHP
X
X
VPP
X
X
High Z
Read
Output Disable
Program Inhibit
Signature Read
(MFG)[9]
Signature Read
(DEV)[9]
VIL
VIL
VIL
X
VIL
X
Notes:
7. X can be V IL or VIH.
8. VHV=12V±0.5V
9. A1 − A8 and A10 − A16 = V IL
5
VIH
VIH
VIL
VIH
[8]
34H
[8]
1DH
VHV
VHV
CY27H010
Typical DC and AC Characteristics
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.1
1.0
0.9
VCC =5.5V
TA =25°C
0.8
0.7
0.6
0.5
0.0
1.25
50 100
150 200
CLOCK PERIOD (ns)
OUTPUT SOURCE CURRENT
vs. OUTPUT VOLTAGE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE
NORMALIZED SUPPLY CURRENT
vs. CYCLE PERIOD
1.25
1.15
1.1
f = 10 MHz
TA =25°C
1.05
1.0
0.95
0.9
4
250
4.5
5
5.5
6
0.85
0.8
–100
–50
0
50
100
150
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
NORMALIZED ACCESS TIME
vs. AMBIENT TEMPERATURE
NORMALIZED ACCESS TIME
vs. SUPPLY VOLTAGE
VCC =5.5V
f = 10 MHz
1.2
OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE
120
1.4
1.2
100
1.3
1.15
1.1
TA = 25°C
VCC =4.5V
1.2
1.05
80
1.1
60
1.0
40
0.9
20
VCC =5.0V
TA =25°C
1.0
0.95
0.9
0.85
4
4.5
5
5.5
6
0.8
–100
SUPPLY VOLTAGE (V)
–50
0
50
100
150
AMBIENT TEMPERATURE (°C)
0
0.0
1.0
2.0
3.0
4.0
OUTPUT VOLTAGE (V)
OUTPUT SOURCE CURRENT vs.
OUTPUT VOLTAGE
–100
–80
–60
–40
–20
0.0
0.0
1.0
2.0
3.0
4.0
5.0
OUTPUT VOLTAGE (V)
H010–8
6
CY27H010
Ordering Information[10]
Speed
(ns)
25
30
35
Ordering Code
Package
Name
Package Type
CY27H010–25JC
J65
32-Lead Plastic Leaded Chip Carrier
CY27H010–25ZC
Z32
32-Lead Thin Small Outline Package
CY27H010–30JC
J65
32-Lead Plastic Leaded Chip Carrier
CY27H010–30PC
P19
32-Lead (600-Mil) Molded DIP
CY27H010–30WC
W20
32-Lead (600-Mil) Windowed CerDIP
CY27H010–30ZC
Z32
32-Lead Thin Small Outline Package
CY27H010–35JC
J65
32-Lead Plastic Leaded Chip Carrier
CY27H010–35PC
P19
32-Lead (600-Mil) Molded DIP
CY27H010–35WC
W20
32-Lead (600-Mil) Windowed CerDIP
CY27H010–35ZC
Z32
32-Lead Thin Small Outline Package
CY27H010–35WMB
W20
32-Lead (600-Mil) Windowed CerDIP
CY27H010–35QMB
Q55
32-Pin Windowed Rectangular Leadless Chip Carrier
Operating
Range
Commercial
Commercial
Commercial
Military
Note:
10. Most of the above products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability.
MILITARY SPECIFICATIONS
Group A Subgroup Testing
DC Characteristics
Parameter
Subgroups
VOH
1, 2, 3
VOL
1, 2, 3
VIH
1, 2, 3
VIL
1, 2, 3
IIX
1, 2, 3
IOZ
1, 2, 3
ICC
1, 2, 3
ISB
1, 2, 3
Switching Characteristics
Parameter
Subgroups
tAA
7, 8, 9, 10, 11
tOE
7, 8, 9, 10, 11
tCE
7, 8, 9, 10, 11
Document #: 38–00171–D
7
CY27H010
Package Diagrams
32-Pin Windowed Rectangular Leadless Chip Carrier
32-Lead Plastic Leaded Chip Carrier J65
MIL-STD-1835 C-12
32-Lead (600-Mil) Molded DIP P19
8
CY27H010
Package Diagrams (continued)
32-Lead (600-Mil) Windowed CerDIP W20
32-Lead Thin Small Outline Package Z32
© Cypress Semiconductor Corporation, 1997. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
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