STMicroelectronics BYV52HR Aerospace 30 a - 200 v fast recovery rectifier Datasheet

BYV52HR
Aerospace 30 A - 200 V fast recovery rectifier
Features
■
Very small conduction losses
■
Negligible switching losses
■
High surge current capability
■
High avalanche energy capability
■
Hermetic package
■
Target radiation qualification:
– 150 krad (Si) low dose rate
– 3 Mrad high dose rate
■
Package mass: 10 g
■
ESCC qualified
TO-254
Figure 1.
Description
Packaged in an hermetic TO-254 this device is
intended for use in medium voltage, high
frequency switching mode power supplies, high
frequency DC to DC converters, and other
aerospace applications.
The complete ESCC specification for this device
is available from the European space agency web
site. ST guarantees full compliance of qualified
parts with such ESCC detailed specifications.
Table 1.
Device configuration
BYV52-200FSY1
BYV52-200FSYHRB
Terminal 1: Cathode
3
Terminal 2: No connection
Terminal 3: Anode
The case is not connected to any lead
1
Device summary(1)
Order code
BYV52-200FSY1
BYV52-200FSYHRB
ESCC detailed
Quality level
specification
Lead
finish
EPPL
Engineering
model
Gold
-
Flight part
Solder
dip
5103/030/01
IF(AV)
VRRM
Tj(max)
VF (max)
30 A
200 V
150 °C
1.15 V
Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
April 2010
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8
Characteristics
1
BYV52HR
Characteristics
Table 2.
Absolute maximum ratings
Symbol
IFSM
VRRM
IO
IF(RMS)
TOP
TJ
Characteristic
Value
Unit
400
A
200
V
Average output rectified current (50% duty cycle):
30
A
Forward rms current (per diode)
30
A
-55 to +150
°C
+150
°C
-55 to +150
°C
+260
°C
Forward surge current (per diode)(1)
(2)
Repetitive peak reverse voltage
(3)
Operating case temperature range
(4)
Junction temperature
range(4)
TSTG
Storage temperature
TSOL
Soldering temperature(5)
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. For Tcase ≥ +120°C, derate linearly to 0 A at +150°C.
4. For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100%
inert atmosphere.
5. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
Table 3.
Thermal resistance
Symbol
Rth (j-c)
Parameter
Junction to case
(1)
1. Package mounted on infinite heatsink.
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Value
Unit
0.9
°C/W
BYV52HR
Table 4.
Symbol
IR
VF1
Characteristics
s
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Characteristic
MIL-STD-750
test method
Reverse current
4016
Forward voltage
4011
(1)
VF2(1)
VBR
Limits
Test conditions
Units
Min.
Max.
DC method, VR = 200 V
-
25
µA
Pulse method, IF = 20 A
-
1.01
V
Pulse method, IF = 30 A
-
1.15
V
200
-
V
Breakdown voltage
4021
IR = 100 µA
C
Capacitance
4001
VR = 10 V, F = 1 MHz
-
400
pF
trr
Reverse recovery time
4031
IF = 1 A, VR = 30 V,
dIF/dt = -50 A/µs
-
55
ns
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
Zth(j-c)(2)
Calculate ΔVF(3)
°C/W
1. Pulse width ≤ 300µs, duty cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5.
Symbol
IR
VF2
(2)
Electrical measurements at high and low temperatures (per diode)
Characteristic
Reverse current
Forward voltage
MIL-STD-750
test method
4016
4011
Limits
Test conditions(1)
Units
Min.
Max.
Tcase = +125 (+0, -5) °C
DC method, VR = 200 V
-
15
mA
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
-
0.95
V
Tcase = +55 (+0, -5) °C
pulse method, IF = 20 A
-
1.15
V
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%
To evaluate the conduction losses use the following equation:
P = 0.74 x IF(AV) + 1.00 x IF2(RMS )
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Package information
2
BYV52HR
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 2.
Metal flange mount package (TO-254(a)), 3 lead dimension definitions
B
R1
D
E
H
ØF
C
G
A
3
2
1
N
ØM
R2
L
K
ØI
K
J
a. The terminal identification is specified by the device configuration. See Figure 1 for terminal connections
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BYV52HR
Package information
Table 6.
Metal flange mount package (TO-254), 3-lead dimension values
Dimension in millimetres
Dimlension in inches
Reference
Min.
Max.
Min.
Max.
A
13.59
13.84
0.535
0.545
B
13.59
13.84
0.535
0.545
C
20.07
20.32
0.790
0.800
D
6.3
6.7
0.248
0.264
E
1
3.9
0.039
0.154
ØF
3.5
3.9
0.138
0.154
G
16.89
17.4
0.665
0.685
H
ØI
(1)
6.86 BSC
0.89
0.270 BSC
1.14
0.035
0.045
J
3.81 BSC
0.150 BSC
K
3.81 BSC
0.150 BSC
L
12.95
14.5
ØM
0.510
3.05 Typ.
0.571
0.120 Typ.
N
-
0.71
-
0.028
R1(2)
-
1
-
0.039
(3)
1.65 Typ.
R2
0.065
1. 3 locations
2. Radius of heatsink flange corner - 4 locations
3. Radius of body corner - 4 locations
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Ordering information
BYV52HR
3
Ordering information
Table 7.
Ordering information(1)
Order code
BYV52-200FSY1
ESCC
Lead
detailed
Package
Comment
finish
specification
-
BYV52-200FSYHRB
5103/030/01
Mass EPPL Packing
BYV52200FSY1
+ BeO
Gold
TO-254
Marking
Single die
Solder
dip
Strip
pack
10 g
510303001 + BeO
Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
6/8
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BYV52HR
4
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
14-Apr-2010
1
Changes
First issue.
Doc ID 17395 Rev 1
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BYV52HR
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