Comchip CDBDSC51200-G Silicon carbide power schottky diode Datasheet

Silicon Carbide Power Schottky Diode
CDBDSC51200-G
Reverse Voltage: 1200 V
Forward Current: 5 A
RoHS Device
D-PAK(TO-252)
0.098(2.50)
0.083(2.10)
0.268(6.80)
0.248(6.30)
Features
0.217(5.50)
0.024(0.60)
0.016(0.40)
0.201(5.10)
- Rated to 1200V at 5 Amps
4
- Zero reverse recovery current
0.244(6.20)
0.213(5.40)
- Zero forward recovery voltage
- Temperature independent switching behaviour.
1
- High temperature operation.
2
3
0.126(3.20)
0.094(2.40)
- High frequency operation.
0.039(1.00)
0.020(0.50)
0.090(2.29)
0.016(0.40)
0.187(4.74)
0.171(4.34)
Mechanical data
- Case: TO-252/D-PAK, molded plastic.
0.024(0.60)
0.016(0.40)
Dimensions in inches and (millimeters)
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
C(3)
C(1)
(2) A
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
Limits
Unit
Repetitive peak reverse voltage
Tj = 25°C
VRRM
1200
V
Surge peak reverse voltage
Tj = 25°C
VRSM
1200
V
DC bolcking voltage
Tj = 25°C
VDC
1200
V
Continuous forward current
Tj = 25°C
Tj = 135°C
Tj = 158°C
IF
8.5
5
A
Repetitive peak forward surge cruuent
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
IFRM
25
A
Non-repetitive peak forward surge current
Tc = 25°C, tp = 10ms
Half sine wave
IFSM
50
A
Power dissipation
Operating junction temperature range
Storage temperature range
109.5
TC = 25°C
TC = 110°C
Typical thermal resistance
18
Junction to case
PTOT
47
W
RθJC
1.37
°C/W
TJ
-55 ~ +175
°C
TSTG
-55 ~ +175
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Symbol
Conditions
IF = 5A, Tj = 25°C
Forward voltage
VR = 1200V, Tj = 25°C
IR
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
QC = ∫ C(V) dv
Total capacitive charge
Typ.
VF
IF = 5A, Tj = 175°C
Reverse current
Min.
QC
VR
Unit
Max.
1.45
1.7
2.05
2.5
20
100
50
200
V
μA
nC
36
0
475
VR = 0V, Tj = 25°C, f = 1MHZ
Total capacitance
VR = 400V, Tj = 25°C, f = 1MHZ
C
VR = 800V, Tj=25°C, f=1MHZ
510
34
44
33
40
pF
RATING AND CHARACTERISTIC CURVES (CDBDSC51200-G)
Fig.2 - Reverse Characteristics
0.035
°C
=1
2
TJ
=1
75
TJ
5
Reverse Current, IR (uA)
5°
C
7 5°
C
6
TJ=
2 5°
C
0.04
TJ=
Forward Current, IF (A)
Fig.1 - Forward Characteristics
7
4
3
2
1
TJ=175°C
=25°C
0.025
TJ=125°C
0.02
TJ=75°C
0.015
TJ=25°C
0.01
0.005
0
0
0
0.5
1.0
1.5
2.0
2.5
Capacitance Between Terminals, CJ (pF)
10
30
30 %
%
Du
ty
Duty
20
70% Duty
D.C.
0
50
1500
Fig.4 - Capacitance Characteristics
40
25
1000
Fig.3 - Current Derating
50
50% Duty
500
Reverse Voltage, VR (V)
60
10
0
Forward Voltage, VF (V)
70
Forward Current, IF (A)
0.03
75
100
125
150
175
500
400
300
200
100
0
0.01
Case Tempature, TC (°C)
0.1
1
10
100
1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
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Silicon Carbide Power Schottky Diode
Reel Taping Specification
d
P0
P1
E
Index hole
F
B
P
W
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
160mm (min)
Start
400mm (min)
Direction of Feed
TO-252/D-PAK
TO-252/D-PAK
SYMBOL
A
B
C
d
D
D1
D2
(mm)
6.96 ± 0.10
10.49 ± 0.10
2.79 ± 0.10
1.55 ± 0.05
330.00 ± 2.00
76.50 + 2.00
- 0.00
13.30 ± 1.00
(inch)
0.274 ± 0.004
0.413 ± 0.004
0.110 ± 0.004
0.061 ± 0.002
12.992 ± 0.079
3.012 + 0.079
- 0.00
0.524 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
7.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
16.00 ± 0.20
21.00 Max.
(inch)
0.069 ± 0.004
0.295 ± 0.004
0.315 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.630 ± 0.008
0.827 Max.
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Silicon Carbide Power Schottky Diode
Marking Code
Part Number
Marking Code
CDBDSC51200-G
ESIC05120SD
ESIC05120SD
Suggested PAD Layout
TO-252 / DPAK
SIZE
(mm)
(inch)
A
4.57
0.180
B
1.20
0.047
C
5.80
0.228
D
5.85
0.230
E
2.00
0.079
D
E
A
C
B
Standard Packaging
REEL PACK
Case Type
TO-252/D-PAK
REEL
REEL SIZE
( pcs )
(inch)
2,500
13
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