IPB027N10N3 G ® "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & V 9H )(( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D )# Q * E1<96954 13 3 ? B49>7 D? $ 6? BD1B75D1@@<9 3 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 8B? >? EC B53 D 96931D 9? > Q" 1<? 75> 6B55 13 3 ? B49 >7 D? # Type #) ' ' ! Package E=%ID*.+%+ Marking (*/C)(C Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9 6954 Parameter Symbol Conditions ? >D 9>E? EC 4B 19> 3 EBB5>D I9 T 8 T T 8 Value *# )*( T Unit 6 )*( ) E<C54 4B19> 3 EBB5>D*# I 9$\aX_Q T 8 T ,0( F1<1>3 85 5>5B7I C9 >7<5 @E<C5 E 6H I 9 )((( Y@ !1D5 C? EB35 F? <D175 V =H q*( J ) ? G5B49CC9@1D9? > P `[` +(( K ( @5B1D9>7 1>4 CD? B 175 D5=@5B1DEB5 T V T _`S T 8 T # 3 <9=1D 93 3 1D57? BI #' # )# *# + 5F $ , - R =H " T 1>4 $ , , 55 697EB 5 @175 IPB027N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. % % (&- Thermal characteristics -85B=1<B5C9 CD1>3 5 :E>3 D9 ? > 3 1C5 R `T@8 -85B=1<B5C9 CD1>3 5 R `T@6 =9>9 =1<6? ? D@B9>D 3 = * 3 ? ? <9 >7 1B51+# :E>3 D 9? > 1=2 9 5>D A'K % % ,( )(( % % Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954 Static characteristics B19> C? EB35 2 B51;4? G> F? <D175 V "7G#9HH V =H . I 9 = !1D5 D8B5C8? <4 F? <D175 V =H"`T# V 9H4V =H I 9 V * *&/ +&- 05B? 71D5 F? <D175 4B 19> 3 EBB5>D I 9HH V 9H . V =H T V T . % (&) ) V 9H . V =H T V T . % )( )(( J r6 !1D5 C? EB35 <51;175 3 EBB5>D I =HH V =H . V 9H . % ) )(( Z6 B19> C? EB35 ? > CD1D5 B5C9CD1>3 5 R 9H"[Z# V =H . I 9 % *&+ *&/ Y" % *&0 ,&- % )&1 % " 1, )00 % H V =H . I 9 !1D5 B5C9CD 1>3 5 R= I^MZ_O[ZPaO`MZOQ g R_ +# 5F935 ? > == H == H == 5@? HI ) 3 ? >>53 D 9? > ) 9C F5B D931<9> CD 9<<19B + 5F gV 9Hg5*gI 9gR 9H"[Z#YMd I 9 + G9D8 3 =* ? >5 <1I5B @175 V=D 893; 3 ? @@5B1B 51 6? B4B 19> IPB027N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. % )))(( ),0(( \< % )1,( *-0( Dynamic characteristics #>@ED3 1@13 9D1>3 5 C U__ V =H . V 9H f & " J . ( ED@ED3 1@13 9 D1>3 5 C [__ + 5F5BC5 DB1>C65B3 1@13 9D1>3 5 C ^__ % .1 % -EB> ? > 45<1I D9=5 t P"[Z# % +, % + 9C5 D9 =5 t^ % -0 % -EB> ? 6645<1I D9=5 t P"[RR# % 0, % tR % *0 % !1D5 D? C? EB35 3 81B75 Q S_ % ,0 % !1D5 D? 4B19> 3 81B75 Q SP % */ % % ,* % 1<<D9 =5 V 99 . V =H . I 9 R = " Z_ !1D5 81BS5 81B13 D5B9 CD 93C,# V 99 . I 9 V =H D? . Z8 , G9D389 >7 3 81B75 Q _c !1D5 3 81B75 D? D 1< QS % )-- *(. !1D5 @<1D51E F? <D 175 V \XM`QMa % ,&+ % ( ED@ED3 81B75 Q [__ % *(- */+ Z8 % % )*( 6 % % ,0( % ) )&* J % 0. % Z_ % *+* % Z8 V 99 . V =H . J Reverse Diode 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB 5>D IH 9? 45 @E<C5 3 EBB 5>D I H$\aX_Q 9? 45 6? BG1B4 F? <D175 V H9 + 5F5BC5 B53 ? F5BI D9 =5 t ^^ + 5F5BC5 B53 ? F5BI 3 81B 75 Q ^^ ,# + 5F T 8 T V =H . I < T V T V G . I <4100 A Pi <'Pt VC , 55 697EB 5 6? B71D5 3 81B 75 @1B1=5D5B4569>9D 9? > @175 IPB027N10N3 G 2 Drain current P `[`4R"T 8# I 94R"T 8 V =H" 350 140 300 120 250 100 200 80 . I D [A] P tot [W] 1 Power dissipation 150 60 100 40 50 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9H T 8 T D 4( Z `T@84R"t \# @1B1=5D5B t \ @1B1=5D5B D 4t \'T 103 100 <9=9D 54 2 I ? > CD 1D5 ^Q_U_`MZOQ VC VC VC 102 (&- Z thJC [K/W] I D [A] =C =C 10 1 98 (&* 10 -1 (&) (&(- 100 (&(* (&() C9>7<5 @E<C5 10-1 10-1 10-2 100 101 102 103 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] + 5F 10-5 @175 IPB027N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9H T V T R 9H"[Z#4R"I 9 T V T @1B 1=5D5B V =H @1B1=5D5B V =H 300 5 . . . . 250 4 . . . R DS(on) [m ] I D [A] 200 150 3 . . . 2 . 100 1 50 0 0 ( 0 1 2 0 40 V DS [V] 80 120 160 120 160 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =H K V 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9 T V T 300 240 250 200 200 160 g fs [S] I D [A] @1B 1=5D5B T V 150 100 120 80 T 50 40 T 0 0 0 2 4 6 + 5F 0 40 80 I D [A] V GS [V] @175 IPB027N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T V I 9 V =H"`T#4R"T V V =H4V 9H V =H . @1B1=5D5B I9 6 4 3.5 5 3 V 2.5 V GS(th) [V] R DS(on) [m ] 4 3 `e\ V 2 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 11 Typ. capacitances C 4R"V 9H V =H . f 60 100 140 180 T j [°C] T j [°C] 12 Forward characteristics of reverse diode & " J I <4R"V H9# @1B1=5D5B TV 105 103 8U__ T 104 T 102 I F [A] C [pF] 8[__ 103 T T 101 8^__ 102 101 100 0 20 40 60 80 V DS [V] + 5F 0 0.5 1 1.5 2 V SD [V] @175 IPB027N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6J R =H " V =H4R"Q SM`Q I 9 @1B 1=5D5B T V"_`M^`# @1B1=5D5B V 99 1000 @E<C54 10 8 . 100 T . 6 V GS [V] I AS [A] T T . 4 10 2 1 0 1 10 100 1000 0 40 15 Drain-source breakdown voltage V 7G"9HH#4R"T V I 9 80 120 160 Q gate [nC] t AV [µs] 16 Gate charge waveforms = 110 V =H Qg V BR(DSS) [V] 105 100 V S _"`T# 95 Q S "`T# Q _c Q S_ 90 -60 -20 20 60 100 140 Q g ate Q SP 180 T j [°C] + 5F @175 IPB027N10N3 G PG-TO263-3: Outline + 5F @175 IPB027N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 5F @175