MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 Functional Schematic Features • • • • • • • • • High Voltage CMOS Technology Complementary Outputs Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Plastic SOIC-8 Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Reflow Compatible Description The MADR-009269-000100 is a single channel CMOS driver used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally 0 to +2.0V (relative to GND) to optimize the intermodulation products of FET control devices at low frequencies. For driving PIN Diode circuits, the outputs are nominally switched between +5V & -5V. Pin Configuration3 Ordering Information1 Pin No. Function 1 Output A 2 GND 3 VCC 4 C, Logic 5 VEE Part Number Package 6 VOPT MADR-009269-000100 Bulk Packaging 7 GND MADR-009269-000DIE Die 2 8 Output B MADR-009269-0001TR 1000 piece reel 1. Reference Application Note M513 for reel size information. 2. Die sales are available in waffle packs in increments of 100 pieces. 3. The bottom of the die should be isolated for part number MADR-009269-000DIE. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 Guaranteed Operating Ranges 4,5,8 Symbol Parameter Unit Min. Typ. Max. VCC Positive DC Supply Voltage V 4.5 5.0 5.5 VEE Negative DC Supply Voltage V -10.5 -5.0 -4.5 Optional DC Output Supply Voltage V 0 — VCC VOPT - VEE Negative Supply Voltage Range V 4.5 Note 6,7 16.0 VCC - VEE Positive to negative Supply Range V 9.0 10.0 16.0 TOPER Operating Temperature °C -40 +25 +85 IOH DC Output Current - High mA -50 — — IOL DC Output Current - Low mA — — 50 Trise, Tfall Maximum Input Rise or Fall Time ns — — 500 VOPT 6,7 4. Unused logic inputs must be tied to either GND or VCC. 5. All voltages are relative to GND. 6. VOPT is grounded in most cases when FETs are driven. To improve the intermodulation performance and the 1 dB compression point of GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current that is on the GaAs MMICs will increase when positive controls are applied. 7. When this driver is used to drive PIN diodes, VOPT is often set to +5.0V, with VEE set to -5.0V. 8. 0.01 uF decoupling capacitors are required on the power supply lines. Truth Table Handling Procedures Input Please observe the following precautions to avoid damage: Outputs C A B Logic “0” VEE VOPT Logic “1” VOPT VEE Static Sensitivity Silicon Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 DC Characteristics over Guaranteed Operating Range Symbol Parameter Test Conditions Units Min. Typ. Max. VIH Input High Voltage Guaranteed High Input Voltage V 2.0 — — VIL Input Low Voltage Guaranteed Low Input Voltage V — — 0.8 VOH Output High Voltage IOH = -1 mA V VOPT - 0.1 — — VOL Output Low Voltage IOL = 1 mA V — — VEE + 0.1 IIN Input Leakage Current VIN = VCC or GND, VEE = min, VCC = max, VOPT = min or max µA -1 — 1 RNFET Output Resistance NFET On (to VEE) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V, VOUT = -4.9V +25°C Ω — 30 — RPFET Output Resistance PFET On (to VOPT) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V, VOUT = 4.9V +25°C Ω — 30 — ICC Quiescent Supply Current VIN = VCC or GND, VEE = -10.5V, VCC = 5.5V, VOPT = 5.5V, No Output Load µA — 1 — ∆ ICC Additional Supply Current (per TTL Input pin) VCC= max, VIN = VCC -2.1V mA — 1 — IEE Quiescent Supply Current VIN = VCC or GND, VEE = -10.5V, VCC = 5.5V, VOPT = 5.5V, No Output Load µA — 1 — IOPT Quiescent Supply Current VIN = VCC or GND, VEE = -10.5V, VCC = 5.5V, VOPT = 5.5V, No Output Load µA — 1 — 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 AC Characteristics Over Guaranteed Operating Range9 Typical performance Symbol Parameter -40°C +85°C +85°C Unit TPLH Propagation Delay 20 22 25 ns TPHL Propagation Delay 20 22 25 ns TTLH Output Transition Time (Rising Edge) 5 5 8 ns TTHL Output Transition Time (Falling Edge) 4 4 5 ns Tskew Delay Skew 2.5 2.5 2.5 ns PRF (max) 50% Duty Cycle DC — 10 MHz CIN Input Capacitance 5 5 5 pF 9. VCC = +4.5V, VEE = -4.5V, VOPT = 0V or +4.5V, CL = 25 pF, Trise, Tfall = 6 ns Switching Waveforms Tf Tr INPUT C VIN 1.3V 1.3V 10% 10% TPLH OUTPUT B LOGIC 0 TPHL TTLH TTHL 90% VOUT OUTPUT A LOGIC 1 90% 90% 50% 10% 90% 50% 10% TSKEW OUTPUT HIGH TSKEW OUTPUT LOW 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 Absolute Maximum Ratings11 Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage -0.5 7.0 V ICC Positive DC Supply Current (-0.5V ≤ VIN ≤ 0.8V; 2.0V ≤ VIN ≤ VCC + 0.5V; VCC - VIN ≤ 7.0V ) — 20 mA VEE Negative DC Supply Voltage -11.0 0.5 V -60 — mA -0.5 Note 13 V — 60 mA IEE VOPT IOPT Negative DC Supply Current (per Output) 12 Optional DC Output Supply Voltage Optional DC Output Supply Current (per Output) 12 VOPT - VEE Output to Negative Supply Voltage Range -0.5 18.0 V VCC - VEE Positive to Negative Supply Voltage Range -0.5 18.0 V VIN DC Input Voltage -0.5 Note 14 VCC +0.5 V VO DC Output Voltage VEE – 0.5 VOPT + 0.5 V Power Dissipation in Still Air — 500 mW TOPER Operating Temperature -55 125 °C TSTG Storage Temperature -65 150 °C ESD ESD Sensitivity 2.0 — kV PD 15 11. All voltages are referenced to GND. All inputs and outputs incorporate latch-up protection structures. 12. The maximum IEE and IOPT are specified under the condition of VCC = 5.5V, VEE = -5.5V, VOPT = 5.5V, and the total power dissipation is within 500 mW in still air. 13. The absolute maximum rating for VOPT is VCC + 0.5V, or +7.0V, whichever is less. 14. If VCC ≥ 6.5V, then the minimum for VIN is VCC - 7.0V. 15. Derate -7 mW/°C from 65°C to 85°C. Equivalent Output Circuit for A and B Outputs (50 mA load at 25°) 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 Typical Application for a SPDT Switch Description of Circuit The MADR-009269-000100 provides a pair of complementary outputs that are each capable of driving a maximum of ± 50 mA into a load. In addition, with proper capacitor selection (C3 & C4) used in parallel with the current setting resistor (R1 & R2), additional spiking current can be achieved. To achieve the Non-Inverting and Inverting complementary voltages, each output is switched between two internal FETs. The FETs are connected to VOPT for the positive output and VEE for the negative output. VOPT and VEE are adjustable for various configurations and have the following limitations: VEE can be no more negative than – 10.5 volts; VOPT can be no more positive than +5.5 volts AND VOPT must always be less than or equal to VCC. Increasing VOPT beyond VCC will prevent the device from switching states when commanded to by the logic input. The most common configuration is to drive VEE at –5.0 volts with VCC and VOPT tied together at +5.0 volts. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 Lead-Free, SOIC-8† † Reference Application Note M538 for lead-free solder reflow recommendations. 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADR-009269-000100 Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 Die Outline Pad Configuration16,17 Die Size: 1130 x 1290 µm (nominal) Pad No. X (µm) nominal Y (µm) nominal Pad Size (µm) XxY 0 0 0 Lower left edge of die 1 266.40 1092.35 94 x 132 2 157.50 903.70 85 x 85 3 200.40 663.65 85 x 85 4 365.30 200.45 85 x 85 5 684.35 157.50 85 x 85 6 972.50 230.50 85 x 85 7 972.50 451.45 85 x 85 8 863.60 1092.35 94 x 132 9 1130 1290 Upper right edge of die 16. All X,Y dimensions are at bond pad center. 17. Die thickness is 8.0 mils. 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.