Powerex Power CM600HB-24A Single igbtmod a-series module 600 amperes/1200 volt Datasheet

CM600HB-24A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Single IGBTMOD™
A-Series Module
600 Amperes/1200 Volts
A
C
Y - THD (2 TYP.)
M
E
E
C
P
D
B
E
U
R
G
T
V - THD
(2 TYP.)
Q
X - DIA.
(4 TYP.)
G
L
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor in a single configuration with
a reverse connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
N
Z
J
J
S
K
H
F
W
E
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
C
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
N
0.69
17.5
A
4.33
110.0
B
3.15
80.0
P
0.61
15.5
0.51
13.0
C
3.66±0.008
93.0±0.25
Q
D
2.44±0.008
62.0±0.25
R
0.49
12.5
S
0.45
11.5
E
1.57
40.0
F
1.42 Max.
36.0 Max.
T
0.43
11.0
U
0.35
9.0
M8
G
1.14
29.0
H
1.00 Max.
25.5 Max
V
M8 Metric
0.28
J
0.94
24.5
W
K
0.94
24.5
X
0.256 Dia.
6.50 Dia.
M4 Metric
M4
0.12
L
0.83
21.0
Y
M
0.71
18.0
Z
01/10 Rev. 1
7.0
3.04
Applications:
£ DC Chopper
£ Inverter
£ UPS
£ Forklift
Ordering Information:
Example: Select the complete
part module number you
desire from the table below
-i.e. CM600HB-24A is a 1200V
(VCES), 600 Ampere Single
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
600
24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600HB-24A
Single IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Symbol
CM600HB-24A
Units
Tj
–40 to 150
°C
Junction Temperature
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
600
Amperes
Collector Current (DC, TC = 80°C)*4
Peak Collector Current (Pulse, Repetitive)*2
ICM
1200
Amperes
Maximum Collector Dissipation (TC = 25°C)*2,*4
PC
3670
Watts
1
Emitter Current (TC = 25°C)
IE*
600
Amperes
IEM*1
1200
Amperes
Mounting Torque, M8 Main Terminal
—
95
in-lb
Mounting Torque, M6 Mounting
—
26
in-lb
Mounting Torque, M4 G(E) Terminal
—
13
in-lb
Weight
—
560
Grams
VISO
2500
Volts
Peak Emitter Current (Pulse, Repetitive)*2
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
1.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C*3
—
2.1
3.0
Volts
Total Gate Charge
QG
Emitter-Collector Voltage
1
VEC*
IC = 600A, VGE = 15V, Tj = 125°C*3
—
2.4
—
Volts
VCC = 600V, IC = 600A, VGE = 15V
—
3000
—
nC
—
—
3.8
Volts
Min.
Typ.
Max.
Units
—
—
105
nf
—
—
9
nf
3
IE = 600A, VGE = 0V*
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
—
—
Inductive
Turn-on Delay Time
td(on)
—
—
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
2.0
660
nf
ns
tr
VCC = 600V, IC = 600A,
—
—
190
ns
td(off)
VGE1 = VGE2 = 15V, RG = 0.52Ω,
—
—
700
ns
tf
Inductive Load
—
—
350
ns
Diode Reverse Recovery Time
trr*1
Switching Operation,
—
—
250
ns
Diode Reverse Recovery Charge
Qrr*1
IE = 600A
—
19.0
—
µC
*1
*2
*3
*4
2
Symbol
Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600HB-24A
Single IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Units
—
—
0.034
°C/W
—
0.053
°C/W
—
0.02
—
°C/W
0.52
—
7.8
Ω
Rth(j-c)Q
Per IGBT*
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi*4
Rth(c-f)
Thermal Grease Applied*4,*5
External Gate Resistance
Max.
—
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Typ.
4
RG
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
15
900
12
600
11
300
10
9
0
2
4
6
8
1
300
0
600
900
IC = 1200A
6
IC = 600A
IC = 240A
4
2
0
1200
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
103
103
102
Tj = 25°C
Tj = 125°C
0
8
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
2
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
101
3
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
01/10 Rev. 1
102
101
Coes
Cres
100
td(off)
102
tr
VCC = 600V
VGE = 15V
RG = 0.52Ω
Tj = 125°C
Inductive Load
VGE = 0V
5
10-1
10-1
100
101
20
tf
td(on)
Cies
SWITCHING TIME, (ns)
0
10
4
Tj = 25°C
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE =
20V
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
101
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600HB-24A
Single IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
Irr
trr
101
101
103
102
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
4
0
900
1800
2700
3600
4500
ESW(on)
ESW(off)
100
101
102
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
100
101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
102
Err
101
100
101
VCC = 600V
VGE = 15V
RG = 0.52Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
10-3
8
101
COLLECTOR CURRENT, IC, (AMPERES)
101
10-1
10-2
VCC = 600V
12
VCC = 600V
VGE = 15V
RG = 0.52Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
GATE CHARGE, QG, (nC)
ESW(on)
ESW(off)
10-1
VCC = 400V
102
EMITTER CURRENT, IE, (AMPERES)
VCC = 600V
VGE = 15V
IC = 600A
Tj = 125°C
Inductive Load
C Snubber at Bus
10-3
16
0
103
102
100
IC = 600A
103
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
20
VCC = 600V
VGE = 15V
RG = 0.52Ω
Tj = 25°C
Inductive Load
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
REVERSE RECOVERY, Irr, trr, (ns)
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE CHARGE VS. VGE
Err
101
VCC = 600V
VGE = 15V
IC = 600A
Tj = 125°C
Inductive Load
C Snubber at Bus
100
10-1
100
101
GATE RESISTANCE, RG, ()
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.034°C/W
(IGBT)
Rth(j-c) =
0.051°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
4
01/10 Rev. 1
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