Comchip Schottky Barrier Rectifiers SMD Diode Specialist MBR20D45FCT-G Thru. MBR20D200FCT-G Forward current: 20A Reverse voltage: 45 to 200V RoHS Device Features -Silicon epitaxial planar chip, metal silicon junction. -Guard ring for overvoltage protection. -Low stored charge, majority carrier conduction. -Low power loss, high efficiency -High current capability. -High surge capability. ITO-220AB 0.406(10.30) 0.382( 9.70) 0.130(3.30) 0.098(2.50) 0.272(6.90) 0.248(6.30) 0.606(15.40) 0.583(14.80) 0.134(3.40) 0.118(3.00) Mechanical data -Epoxy: UL94V-0 rated flame retardant. -Case: JEDEC ITO-220AB molded plastic body over passivated chip. -Leads: Axial leads, solderable per MIL-STD-202, method 208 guranteed. -Polarity: As marked -Weight: 1.70 grams 0.189(4.80) 0.165(4.20) 1 2 3 0.161(4.10)max 0.547(13.90) 0.512(13.00) 0.028(0.70) 0.020(0.50) 0.031(0.80) MAX 0.100(2.55) Circuit diagram Anode 1 Dimensions in inches and (millimeter) 2 Cathode Anode 3 Maximum Ratings and Electrical Characteristics Ratings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . MBR20D Symbol Parameter Units 45FCT-G 60FCT-G 80FCT-G 100FCT-G 150FCT-G 200FCT-G Max. Repetitive peak reverse voltage VRRM 45 60 80 100 150 200 V Max. RMS voltage VRMS 31.5 42 56 70 105 140 V Continuous reverse voltage VR 45 60 80 100 150 200 V Max. forward voltage VF 0.70 0.80 IF=10.0A, TA=25°C Operating Temperature 0.85 0.95 V -55 to +150 TJ Symbol °C MAX. Units IO 20.0 A IFSM 150 A VR =VRRM TA=25°C IR 0.1 mA VR =VRRM TA=125°C IR 10 mA Parameter Conditions Forward rectified current see Fig.1 Forward surge current 8.3ms single half sine-wave (JEDEC method) MIN. TYP. Reverse Current Thermal Resistance Storage temperature Junction to case 4.0 RθJC TSTG -65 °C/W +175 Company reserves the right to improve product design , functions and reliability without notice. °C REV: A Page 1 QW-BB060 Comchip Technology CO., LTD. Comchip Schottky Barrier Rectifiers SMD Diode Specialist Rating and characteristic curves (MBR20D45FCT-G Thru. MBR20D200FCT-G) Fig.2 - Maximum Non-Repetitive Surge Current Fig.1 - Forward Current Derating Curve 300 Peak Forward Surge Current, (A) Average Forward Current, (A) 20 15 10 5 Single phase half wave 60Hz resistive or inductive load JEDEC METHOD 200 150 100 50 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature, (°C) Number of Cycles at 60Hz Fig.3 - Typical Reverse Characteristics Fig.4 - Typical Forward Characteristics 10 100 TJ=125°C 1 Instantaneous Forward Current, (A) Instantaneous Reverse Current, (mA) Pulse Width 8.3ms Single Half-Sine-Wave 250 TJ=100°C 0.1 0.01 TJ=25°C 0.001 0 20 40 60 80 100 MBR20D 80FCT-G 10 MBR20D 100FCT-G MBR20D 60FCT-G 1.0 MBR20D 150FCT-G MBR20D 45FCT-G 0.1 0.1 Peraent of Rated Peak Reverse Voltage, (%) 0.3 MBR20D 200FCT-G 0.5 0.7 0.9 1.1 Instantaneous Forward Voltage,(V) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 2 QW-BB060 Comchip Technology CO., LTD. Schottky Barrier Rectifiers Comchip SMD Diode Specialist Marking Code Part Number Marking code MBR20D45FCT-G MBR20D45FCT MBR20D60FCT-G MBR20D60FCT MBR20D80FCT-G MBR20D80FCT MBR20D100FCT-G MBR20D100FCT MBR20D150FCT-G MBR20D150FCT MBR20D200FCT-G MBR20D200FCT Standard Packaging TUBE PACK Case Type ITO-220AB TUBE BOX ( pcs ) ( pcs ) 50 2,000 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-BB060 Comchip Technology CO., LTD.