LRC L2SC4081RT3G General purpose transistors npn silicon Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC4081QT1G Series
FEATURE
ƽLow Cob,Cob=2pF(Typ.).
ƽEpitaxial planar type.
3
ƽPNP complement:L2SA1576A
ƽWe declare that the material of product compliance with RoHS requirements.
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC4081QT1G
BQ
3000/Tape&Reel
L2SC4081QT3G
BQ
10000/Tape&Reel
L2SC4081RT1G
BR
3000/Tape&Reel
L2SC4081RT3G
BR
10000/Tape&Reel
L2SC4081ST1G
BS
3000/Tape&Reel
L2SC4081ST3 G
BS
10000/Tape&Reel
SC-70/SOT– 323
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V
7.0
V
EBO
Collector Current — Continuous
IC
150
mAdc
Collector power dissipation
PC
0.15
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55 ~+150
°C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Min
Typ
Max
Unit
V
(BR)CEO
50
—
—
V
V
(BR)EBO
7
—
—
V
V
(BR)CBO
60
—
—
V
I CBO
—
—
0.1
µA
I EBO
—
—
0.1
µA
V CE(sat)
—
—
0.4
V
h FE
120
––
560
––
fT
—
180
––
MHz
C ob
—
2.0
3.5
pF
h FE values are classified as follows:
*
hFE
Q
R
S
120~270
180~390
270~560
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
50
I C, COLLECTOR CURRENT (mA)
10
1
25°C
– 55°C
50
T A = 100°
C
I C, COLLECTOR CURRENT (mA)
20
2
0.50mA
100
VCE= 6 V
0.5
T A = 25°C
80
60
40
20
0.2
0.1
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
0
–1.6
0.4
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
1.2
1.6
2.0
Fig.4 DC current gain vs. collector current ( )
10
I C, COLLECTOR CURRENT (mA)
0.8
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
500
h FE, DC CURRENT GAIN
8
6
4
2
200
100
50
20
0
0
4
8
12
16
10
20
0.2
0.5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
100
50
20
10
0.2
0.5
1
2
5
10
20
50
I C, COLLECTOR CURRENT (mA)
100
200
5
10
20
50
100
200
Fig.6 Collector-emitter saturation voltage vs.
collector current
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
h FE, DC CURRENT GAIN
200
2
I C, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
500
1
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
I C, COLLECTOR CURRENT (mA)
500
200
100
50
–1
–2
–5
–10
2
5
10
20
50
100
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
–20
–50
–100
I E, EMITTER CURRENT (mA)
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
f r , TRANSITION FREQUENCY(MHz)
Fig.9 Gain bandwidth product vs. emitter current
–0.5
1
I C, COLLECTOR CURRENT (mA)
20
10
5
2
1
0.2
0.5
1
2
5
10
20
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
Rev.O 4/5
50
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
SC-70 / SOT-323
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
0.016
0.010
0.087
0.053
0.055
0.095
1
XX
M
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev.O 5/5
Similar pages