IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications Welding H Bridge Converters G Gate C Collector Features E Emitter Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Base part number Package Type IRGPS66160DPbF Super 247 Standard Pack Form Quantity Tube 25 Orderable Part Number IRGPS66160DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IFRM @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Diode Repetitive Peak Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 600 240 160 360 480 V A 80 480 ±20 750 375 -40 to +175 V W 300 (0.063 in. (1.6mm) from case) °C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.20 1.37 ––– 40 Units °C/W November 13, 2014 IRGPS66160DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 — Typ. — 0.54 — 1.65 — 1.95 — 2.0 Gate Threshold Voltage 4.0 — VGE(th) Threshold Voltage Temperature Coeff. — -16 VGE(th)/TJ gfe Forward Transconductance — 86 — 1.0 ICES Collector-to-Emitter Leakage Current — 2000 — — IGES Gate-to-Emitter Leakage Current — 1.80 Diode Forward Voltage Drop VF — 1.30 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 4.0mA (25°C-175°C) 1.95 IC = 120A, VGE = 15V, TJ = 25°C V — IC = 120A, VGE = 15V, TJ = 150°C — IC = 120A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 5.6mA — mV/°C VCE = VGE, IC = 5.6mA (25°C-175°C) — S VCE = 50V, IC = 120A, PW = 20µs 150 VGE = 0V, VCE = 600V µA — VGE = 0V, VCE = 600V, TJ = 175°C ±400 nA VGE = ±20V 2.60 IF = 24A V — IF = 24A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5 — — µs TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 420 95 34 — — — µJ ns A TJ = 175°C VCC = 400V, IF = 24A, VGE = 15V Rg = 4.7L=200µH, Ls=150nH Min. — — — — — — — — — — — — — — — — — — — — Typ. 220 60 90 4470 3430 7900 80 75 190 40 5360 4390 9750 80 130 260 90 7660 470 250 Max — — — — — — — — — — — — — — — — — — — — Units nC µJ ns µJ ns pF FULL SQUARE Conditions IC = 120A VGE = 15V VCC = 400V IC = 120A, VCC = 400V, VGE=15V RG = 4.7, L= 66µH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 120A, VCC = 400V, VGE=15V RG = 4.7, L= 66µH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 480A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V Notes: VCC = 80% (VCES), VGE = 20V, Rg = 4.7L=66µH. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 250 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 375W Load Current ( A ) 200 150 Square Wave: VCC 100 I 50 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 250 800 700 200 600 500 IC (A) Ptot (W) 150 100 400 300 200 50 100 0 0 25 50 75 100 125 150 175 25 50 75 TC (°C) 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 10µsec 100 100 IC (A) IC (A) 100µsec 1msec 10 DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com 1000 Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 480 480 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 400 320 ICE (A) ICE (A) 320 240 240 160 160 80 80 0 0 0 2 4 6 8 0 10 2 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 480 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V -40°C 25°C 175°C 400 320 IF (A) 320 240 240 160 160 80 80 0 0 2 4 6 8 0 10 0.0 1.0 2.0 V CE (V) 3.0 4.0 5.0 6.0 7.0 V F (V) Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 8 8 6 6 ICE = 60A ICE = 120A VCE (V) VCE (V) 8 V CE (V) 400 ICE = 240A 4 2 ICE = 60A ICE = 120A ICE = 240A 4 2 0 0 5 10 15 20 5 10 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 V CE (V) 480 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 400 www.irf.com 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 8 480 ICE = 60A ICE = 120A 6 TJ = 25°C TJ = 175°C 400 ICE = 240A ICE (A) VCE (V) 320 4 240 160 2 80 0 0 5 10 15 20 2 4 6 8 10 12 14 16 V GE (V) V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 30000 Swiching Time (ns) 25000 Energy (J) 20000 15000 EON 10000 5000 tdOFF tR tF 100 tdON EOFF 10 0 0 50 100 150 200 0 250 50 100 150 200 250 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; ; VCE = 400V, RG = 4.7 ; VGE = 15V 30000 Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; VCE = 400V, RG = 4.7; VGE = 15V 10000 25000 Swiching Time (ns) EOFF Energy (J) 20000 EON 15000 10000 tdOFF 1000 tdON tR tF 100 5000 0 10 0 5 20 40 60 80 100 0 20 40 60 80 100 Rg () RG () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 120A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 120A; VGE = 15V www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 40 40 RG = 4.7 30 30 IRR (A) IRR (A) RG = 10 RG = 22 20 20 10 RG = 50 0 10 10 20 30 40 0 50 10 20 30 40 IF (A) RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 50 4500 40 35 48A 3500 QRR (nC) IRR (A) 30 25 2500 4.7 10 22 50 24A 20 1500 12A 15 500 10 200 400 600 800 1000 1200 200 1400 600 diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C 20 RG = 4.7 RG = 10 800 Time (µs) 400 200 0 800 Isc 12 600 Tsc 8 400 4 200 0 10 20 30 40 50 0 9 10 11 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.irf.com Current (A) RG = 50 600 1000 16 RG = 22 Energy (µJ) 1400 Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 1000 6 1000 diF /dt (A/µs) 12 13 14 15 16 VGE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 16 Cies 10000 Capacitance (pF) VGE, Gate-to-Emitter Voltage (V) 100000 1000 Coes 100 Cres 14 VCES = 400V VCES = 300V 12 10 8 6 4 2 0 10 0 100 200 300 400 500 0 600 50 100 150 200 250 Q G, Total Gate Charge (nC) VCE (V) Fig. 25 - Typical Gate Charge vs. VGE ICE = 120A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Repetitive Peak Current (A) 200 160 D=0.1 120 D=0.2 80 D=0.3 40 0 100 125 150 175 Case Temperature (°C) Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature Thermal Response ( ZthJC ) 1 0.1 D = 0.50 0.20 0.10 R1 R1 0.05 0.01 J 0.02 0.01 J 1 R2 R2 R3 R3 R4 R4 C 1 2 2 3 3 4 C 4 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 i (sec) 0.00487 0.000014 0.05032 0.000114 0.09091 0.003734 0.05519 0.017034 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 J 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 4 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 i (sec) 0.02893 0.000034 0.43845 0.000326 0.60287 0.003626 0.30143 0.02205 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com Fig.C.T.6 - BVCES Filter Circuit © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF 180 600 500 150 500 400 120 400 tf 90 90% ICE 60 200 10% VCE 30 100 TEST CURRENT 300 60 10%ICE 30 10% VCE 0 -30 -0.2 0.3 0.8 0 Eon Loss -100 1.3 -0.7 -0.2 time(µs) -30 1.3 900 QRR 900 800 tRR 800 ICE 700 10 700 600 600 500 Vce (V) 0 IF (A) 0.8 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 30 -10 -20 0.3 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 20 90 90% ICE 200 0 -0.7 150 120 Eoff Loss -100 180 100 10% ICE 0 tr Peak IRR -30 500 VCE 400 400 300 300 200 200 100 100 0 -40 -0.20 0.00 0.20 0.40 0.60 0 -100 -100 -4.0 0.0 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 www.irf.com Ice (A) 300 ICE (A) VCE (V) 600 210 ICE (A) 700 VCE (V) 210 700 4.0 8.0 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF Super 247 Package Outline Dimensions are shown in millimeters (inches) Super 247 Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Super 247 package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF Qualification Information† Industrial Qualification Level Moisture Sensitivity Level RoHS Compliant Super 247 N/A Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/13/2014 Comments Added IFM Diode Maximum Forward Current = 480A with the note on page 1. Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014