Preliminary Technical Information PolarPTM Power MOSFET IXTR20P50P VDSS ID25 RDS(on) = - 500V = - 13A ≤ 490mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C -13 A IDM TC = 25°C, pulse width limited by TJM - 60 A IAR TC = 25°C - 20 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z z TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA t = 1min 2500 t = 1s 3000 V~ V~ Md Mounting force 20..120 / 4.5..27 N/lb. 5 g Weight Isolated Tab G = Gate S = Source D = Drain Features z z z z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated The rugged PolarPTM process Low QG Low Drain-to-Tab capacitance Low package inductance - easy to drive and to protect Applications z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 500 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = -10A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V - 4.5 z z z z High side switching Push-pull amplifiers DC Choppers Automatic test equipment Load-Switch Application Fuel Injection Systems V ±100 nA TJ = 125°C - 25 μA - 200 μA 490 mΩ DS99983(5/08) IXTR20P50P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = -10A, Note 1 11 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 18 S 5120 pF 525 pF 75 pF 26 ns 32 ns 80 ns 34 ns 103 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = -10A RG = 3Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = -10A Qgd 28 nC 38 nC ISOPLUS247 (IXTR) Outline 0.66 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 20 A ISM Repetitive, pulse width limited by TJM - 80 A VSD IF = -10A, VGS = 0V, Note 1 - 2.8 V trr QRM IRM IF = -10A, -di/dt = -150A/μs 406 8.93 - 44 VR = -100V, VGS = 0V ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR20P50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -20 -50 VGS = -10V - 7V -18 -16 -40 -14 -35 - 6V ID - Amperes ID - Amperes VGS = -10V - 7V -45 -12 -10 -8 -6 - 6V -30 -25 -20 -15 - 5V -4 -10 -2 -5 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 0 -6 -9 -15 -18 -21 -24 -27 Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = -10A vs. Junction Temperature -30 2.4 VGS = -10V - 7V -18 VGS = -10V 2.2 -16 RDS(on) - Normalized 2.0 - 6V -14 -12 -10 - 5V -8 -6 1.8 I D = - 20A I D = -10A 1.6 1.4 1.2 1.0 -4 0.8 -2 0.6 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = -10A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -14 2.4 -13 VGS = -10V 2.2 -12 TJ = 125ºC -11 2.0 -10 1.8 ID - Amperes RDS(on) - Normalized -12 VDS - Volts -20 ID - Amperes -3 VDS - Volts 1.6 1.4 -9 -8 -7 -6 -5 -4 1.2 -3 TJ = 25ºC -2 1.0 -1 0.8 0 0 -5 -10 -15 -20 -25 -30 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved -35 -40 -45 -50 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTR20P50P Fig. 8. Transconductance Fig. 7. Input Admittance -35 40 -30 35 TJ = - 40ºC 30 g f s - Siemens ID - Amperes -25 -20 -15 TJ = 125ºC 25ºC - 40ºC -10 25ºC 25 20 125ºC 15 10 -5 5 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 VGS - Volts -20 -25 -30 -35 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -10 -60 VDS = -250V -9 -50 I D = - 10A -8 I G = -1mA -7 VGS - Volts IS - Amperes -40 -30 -6 -5 -4 TJ = 125ºC -20 -3 TJ = 25ºC -2 -10 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 0 -3.5 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 -100.0 RDS(on) Limit 100µs 1,000 - 10.0 ID - Amperes Capacitance - PicoFarads Ciss Coss 100 1ms 10ms - 1.0 DC TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 10 0 -5 -10 -15 -20 -25 -30 100ms -35 -40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. - 0.1 - 10 - 100 VDS - Volts - 1000 IXTR20P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_20P50P(B7) 5-13-08