Vishay MOC8101-X017T Optocoupler, phototransistor output, no base connection Datasheet

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
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Vishay Semiconductors
Optocoupler, Phototransistor Output, no Base Connection
FEATURES
A
1
6 B
• Isolation test voltage, 5300 VRMS
C
2
5 C
• No base terminal connection for improved
common mode interface immunity
NC
3
4 E
• Long term stability
• Industry standard dual in line package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
i179009-1
DESCRIPTION
AGENCY APPROVALS
The MOC8101, MOC8102, MOC8103, MOC8104,
MOC8105 family optocoupler consisting of a gallium
arsenide infrared emitting diode optically coupled to a
silicon planar phototransistor detector in a plastic plug-in
DIP-6 package.
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• BSI IEC 60950; IEC 60065
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
• DIN EN 60747-5-5 (VDE 0884) available with option 1
The base terminal of the MOC8101, MOC8102, MOC8103,
MOC8104, MOC8105 is not connected, resulting in a
substantially improved common mode interference
immunity.
ORDERING INFORMATION
M
O
C
8
1
0
#
PART NUMBER
-
#
X
CTR
BIN
0
#
#
PACKAGE OPTION
DIP-#
Option 6
7.62 mm
10.16 mm
T
TAPE
AND
REEL
Option 7
> 0.7 mm
DIP-6
DIP-6, 400 mil, option 6
> 0.1 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
UL, CSA, BSI
Option 9
10 mA
50 to 80
73 to 117
108 to 173
160 to 256
65 to 133
MOC8101
MOC8102
MOC8103
MOC8104
MOC8105
-
MOC8102-X006
-
-
-
MOC8101-X009
MOC8102-X009
-
-
-
50 to 80
73 to 117
108 to 173
160 to 256
65 to 133
MOC8101-X001
-
MOC8103-X001
-
-
-
MOC8102-X016
-
MOC8104-X016
-
SMD-6, option 7
MOC8101-X017T
MOC8102-X017T
-
-
-
SMD-6, option 9
-
-
-
MOC8104-X019T
-
SMD-6, option 9
VDE, UL, CSA, BSI
DIP-6
DIP-6, 400 mil
Note
• Additional options may be possible, please contact sales office.
Rev. 1.6, 13-Sep-11
Document Number: 83660
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward continuous current
Surge forward current
Power dissipation
Derate linearly from 25°C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector current
Derate linearly from 25°C
Power dissipation
COUPLER
Isolation test voltage
TEST CONDITION
t  10 μs
SYMBOL
VALUE
UNIT
VR
IF
6.0
60
2.5
100
1.33
V
mA
A
mW
mW/°C
30
7.0
50
2.0
150
V
V
mA
mW/°C
mW
5300
 7.0
8.0 (2)
 7.0
8.0 (2)
VRMS
mm
mm
mm
mm
 0.4
mm
IFSM
Pdiss
BVCEO
BVECO
IC
Pdiss
VISO
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Derate linearly from 25 °C
Total power dissipation
Storage temperature
Operating temperature
Junction temperature
Soldering temperature (1)
CTI
175
RIO
Ptot
Tstg
Tamb
Tj
1012
3.33
250
- 55 to + 150
- 55 to + 100
100

mW/°C
mW
°C
°C
°C
Tsld
260
°C
VIO = 500 V
max. 10 s, dip soldering:
distance to seating plane  1.5 mm
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2) Applies to wide bending option 6.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector emitter dark current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance
COUPLER
Saturation voltage collector emitter
Coupling capacitance
TEST CONDITION
PART
IF = 10 mA
IR = 10 μA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
VCE = 5.0 V, f = 1.0 MHz
VCE = 10 V, Tamp = 25 °C
VCE = 10 V, Tamp = 100 °C
IC = 1.0 mA
IE = 100 A
IF = 5.0 mA
SYMBOL
VF
VBR
IR
CO
Rthja
MOC8101
MOC8102
CCE
ICEO1
ICEO1
BVCEO
BVECO
Rthja
VCEsat
CC
MIN.
TYP.
MAX.
UNIT
1.25
1.5
0.01
25
750
10
V
V
μA
pF
K/W
6.0
5.2
1.0
1.0
50
30
7.0
500
0.25
0.6
0.4
pF
nA
μA
V
V
K/W
V
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.6, 13-Sep-11
Document Number: 83660
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Current transfer ratio
VCE = 10 V, IF = 10 mA
PART
SYMBOL
MIN.
MOC8101
CTR
50
TYP.
MAX.
UNIT
80
%
MOC8102
CTR
73
117
%
MOC8103
CTR
108
173
%
MOC8104
CTR
160
256
%
MOC8105
CTR
65
133
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBO
L
Turn-on time
VCC = 10 V, IC = 2.0 mA, RL = 100 
ton
3.0
μs
Turn-off time
VCC = 10 V, IC = 2.0 mA, RL = 100 
toff
2.3
μs
Rise time
VCC = 10 V, IC = 2.0 mA, RL = 100 
tr
2.0
μs
Fall time
VCC = 10 V, IC = 2.0 mA, RL = 100 
tf
2.0
μs
fco
250
kHz
Cut off frequency
MIN.
TYP.
MAX.
UNIT
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
25
1.7
MOC8104
IF = 10 mA
20
1.3
IC (mA)
VF (V)
1.5
TA = 55 °C
1.1
TA = 25 °C
15
MOC8103
MOC8105
10
MOC8102
MOC8101
5
0.9
TA = 100 °C
0.7
0
0.1
1
imoc8101_02
10
0
100
1
2
3
imoc8101_04
IF (mA)
Fig. 1 - Forward Voltage vs. Forward Current
4
5
6
7
8
9
10
VCE (V)
Fig. 3 - Collector Current vs. Collector Emitter Voltage
10
10
1
Normalized to IF = 10 mA
IC (mA)
IC (Normalized)
Normalized to TA = 25 °C
IF = 10 mA
VCE = 10 V
1
0.1
0.01
0.1
imoc8101_03
1
10
100
IF (mA)
Fig. 2 - Collector Current vs. LED Forward Current
Rev. 1.6, 13-Sep-11
0.1
- 60 - 40 - 20 0
imoc8101_05
20 40 60 80 100 120
TA (°C)
Fig. 4 - Collector Current vs. Ambient Temperature
Document Number: 83660
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
20
10 000
Normalized to VCE = 10 V
18
C - Capacitance (pF)
ICEO (Normalized)
f= 1 MHz
16
1000
100
VCE = 30 V
10
VCE = 10 V
1
14
CLED
12
10
8
CCE
6
4
2
0
0.1
0
20
40
60
80
0.01
100
TA (°C)
imoc8101_06
Fig. 5 - Collector Emitter Dark Current vs. Ambient Temperature
IC
1
10
100
Voltage (V)
Fig. 6 - Capacitance vs. Voltage
VCC = 10 V
IF
0.1
imoc8101_07
Input pulse
R L = 100 Ω
10 %
Input
Output
Output pulse
90 %
tr
t of f
t on
Test circuit
tf
Waveforms
imoc81010_01
Fig. 7 - Switching Time Test Circuit and Waveforms
Rev. 1.6, 13-Sep-11
Document Number: 83660
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3
2
1
4
5
6
Pin one ID
6.4 ± 0.1
ISO method A
8.6 ± 0.1
7.62 typ.
1.2 ± 0.1
1 min.
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.25 typ.
3° to 9°
0.5 ± 0.05
7.62 to 8.81
i178004
2.54 typ.
Option 6
Option 7
Option 9
10.36
9.96
7.62 typ.
9.53
10.03
7.8
7.4
7.62 ref.
0.7
4.6
4.1
0.102
0.249
8 min.
0.35
0.25
0.25 typ.
0.51
1.02
8.4 min.
15° max.
8 min.
10.16
10.92
Rev. 1.6, 13-Sep-11
10.3 max.
18450
Document Number: 83660
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DIP-6A
www.vishay.com
Vishay Semiconductors
DIP-6A
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
6.4 ± 0.1
ISO method A
8.6 ± 0.1
1 min.
7.62 typ.
1.2 ± 0.1
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.5 ± 0.05
3° to 9°
0.25 typ.
7.62 to 8.81
i178004
2.54 typ.
Note
The information in this document provides generic information but for specific information on a product the appropriate product datasheet
should be used.
Rev. 1.2, 24-Aug-15
Document Number: 83263
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
1
Document Number: 91000
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