MJB6488, MJB6491 Product Preview Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. http://onsemi.com • DC Current Gain Specified to 15 A − • • • hFE = 20 − 150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 80 Vdc (Min) Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model; 3B, >8000 V, Machine Model; C, >400 V 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 75 W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VCEO 80 Vdc Collector−Base Voltage VCB 90 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector−Emitter Voltage Collector Current − Continuous IC 15 Adc Base Current IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 75 0.6 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 1.8 0.014 W W/°C TJ, Tstg – 65 to + 150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RJC 1.67 °C/W Thermal Resistance, Junction−to−Ambient RJA 70 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. JB64xx D2PAK CASE 418B STYLE 1 xx A Y WW AYWW = 88 or 91 = Assembly Location = Year = Work Week ORDERING INFORMATION Package Shipping† MJB6488 D2PAK 50 Units / Rail 800 / Tape & Reel Device MJB6488T4 D2PAK MJB6491 D2PAK 50 Units / Rail MJB6491T4 D2PAK 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. P0 1 Publication Order Number: MJB6488/D MJB6488, MJB6491 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 80 − Vdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, VBE = 1.5 Vdc) VCEX 90 − Vdc Collector Cutoff Current (VCE = 40 Vdc, IB = 0) ICEO − 1.0 mAdc Collector Cutoff Current (VCE = 85 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C) ICEX − − 100 5.0 Adc mAdc (VBE = 5.0 Vdc, IC = 0) IEBO − 10 A (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) hFE 20 5.0 150 − − (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 15 Adc, IB = 5.0 Adc) VCE(sat) − − 1.3 3.5 Vdc (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) VBE(on) − − 1.3 3.5 Vdc (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) fT 5.0 − MHz (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 25 − − Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter On Voltage DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) Small−Signal Current Gain 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT = |hfe| • ftest. 5000 1000 C, CAPACITANCE (pF) 700 1000 500 tf NPN PNP 200 100 50 0.2 0.5 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C Cob 300 Cib 200 Cob 100 NPN PNP TJ = 25°C 70 1.0 2.0 5.0 IC, COLLECTOR CURRENT (A) 10 50 20 0.5 1.0 Figure 1. Turn−Off Time PD, POWER DISSIPATION (WATTS) t, TIME (ns) ts TA 4.0 TC 80 3.0 60 2.0 5.0 10 20 VR, REVERSE VOLTAGE (V) Figure 2. Capacitances TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 2 140 160 50 MJB6488, MJB6491 VCC + 30 V 25 s 1000 500 RC + 10 V tr SCOPE − 10 V 51 tr, tf 10 ns DUTY CYCLE = 1.0% t, TIME (ns) RB 0 D1 200 100 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR PNP, REVERSE ALL POLARITIES. TC = 25°C VCC = 30 V IC/IB = 10 20 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 10 0.2 0.5 2.0 1.0 5.0 IC, COLLECTOR CURRENT (A) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time Test Circuit 1.0 0.7 0.5 td @ VBE(off) 5.0 V NPN PNP 50 −4V 10 20 Figure 5. Turn−On Time D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZJC (t) = r(t) RJC RJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t, TIME (ms) Figure 6. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 10 100 s 5.0 500 s 2.0 1.0 ms TJ = 150°C 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 0.5 5.0 ms CURVES APPLY BELOW RATED VCEO 0.2 0.1 There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown dc 2.0 40 60 4.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) 80 Figure 7. Active−Region Safe Operating Area http://onsemi.com 3 MJB6488, MJB6491 NPN − MJB6488 PNP − MJB6491 500 500 TJ = 150°C 100 −55 °C 50 20 VCE = 2.0 V 10 5.0 0.2 0.5 TJ = 150°C 200 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25°C 100 −55 °C 50 20 10 1.0 2.0 5.0 IC, COLLECTOR CURRENT (A) 10 5.0 20 VCE = 2.0 V 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (A) 10 20 2.0 VCE , COLLECTOR−EMITTER VOLTAGE (V) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 8. DC Current Gain TJ = 25°C 1.8 1.6 1.4 1.2 1.0 IC = 1.0 A 0.8 4.0 A 8.0 A 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2.0 1.6 1.4 1.2 IC = 1.0 A 1.0 4.0 A 8.0 A 0.8 0.6 0.4 0.2 0 5.0 2000 5000 TJ = 25°C 1.8 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 9. Collector Saturation Region 2.8 2.8 TJ = 25°C 2.0 1.6 1.2 VBE(sat) = IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 TJ = 25°C 2.4 V, VOLTAGE (V) V, VOLTAGE (V) 2.4 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 VCE(sat) @ IC/IB = 10 2.0 5.0 10 0 20 0.2 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 4 10 20 MJB6488, MJB6491 PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE T B M M N R STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR P U L M W J G L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 mm inches MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB6488, MJB6491 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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