ON NLV14011UBDG Ub-suffix series cmos gate Datasheet

MC14001UB, MC14011UB
UB-Suffix Series
CMOS Gates
The UB Series logic gates are constructed with P and N channel
enhancement mode devices in a single monolithic structure
(Complementary MOS). Their primary use is where low power
dissipation and/or high noise immunity is desired. The UB set of
CMOS gates are inverting non−buffered functions.
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Features
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Linear and Oscillator Applications
• Capable of Driving Two Low−Power TTL Loads or One
SOIC−14
D SUFFIX
CASE 751A
Low−Power Schottky TTL Load Over the Rated Temperature Range
• Double Diode Protection on All Inputs
• Pin−for−Pin Replacements for Corresponding CD4000 Series UB
•
•
Suffix Devices
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
This Device is Pb−Free and is RoHS Compliant
1
Value
Unit
−0.5 to +18.0
V
−0.5 to VDD + 0.5
V
Input or Output Current
(DC or Transient) per Pin
± 10
mA
PD
Power Dissipation, per Package
(Note 1)
500
mW
VDD
Vin, Vout
Iin, Iout
Parameter
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
14
140xxUG
AWLYWW
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
MARKING DIAGRAM
xx
A
WL, L
YY, Y
WW, W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
TA
Ambient Temperature Range
−55 to +125
°C
Tstg
Storage Temperature Range
−65 to +150
°C
TL
Lead Temperature
(8−Second Soldering)
260
°C
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS ≤ (Vin or Vout) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either VSS or VDD). Unused outputs must be left open.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 10
1
Publication Order Number:
MC14001UB/D
MC14001UB, MC14011UB
LOGIC DIAGRAMS
MC14001UB
Quad 2−Input
NOR Gate
1
2
5
6
8
9
12
13
MC14011UB
Quad 2−Input
NAND Gate
1
3
3
2
5
4
4
6
8
10
10
9
12
11
11
13
VDD = PIN 14
VSS = PIN 7
FOR ALL DEVICES
PIN ASSIGNMENTS
MC14001UB
Quad 2−Input NOR Gate
MC14011UB
Quad 2−Input NAND Gate
IN 1A
1
14
VDD
IN 1A
1
14
VDD
IN 2A
2
13
IN 2D
IN 2A
2
13
IN 2D
OUTA
3
12
IN 1D
OUTA
3
12
IN 1D
OUTB
4
11
OUTD
OUTB
4
11
OUTD
IN 1B
5
10
OUTC
IN 1B
5
10
OUTC
IN 2B
6
9
IN 2C
IN 2B
6
9
IN 2C
VSS
7
8
IN 1C
VSS
7
8
IN 1C
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2
MC14001UB, MC14011UB
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
− 55_C
25_C
125_C
Min
Max
Min
Typ
(Note 2)
Max
Min
Max
Unit
Output Voltage
Vin = VDD or 0
“0” Level
VOL
5.0
10
15
−
−
−
0.05
0.05
0.05
−
−
−
0
0
0
0.05
0.05
0.05
−
−
−
0.05
0.05
0.05
Vdc
Vin = 0 or VDD
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
−
−
−
4.95
9.95
14.95
5.0
10
15
−
−
−
4.95
9.95
14.95
−
−
−
Vdc
“0” Level
VIL
5.0
10
15
−
−
−
1.0
2.0
2.5
−
−
−
2.25
4.50
6.75
1.0
2.0
2.5
−
−
−
1.0
2.0
2.5
5.0
10
15
4.0
8.0
12.5
−
−
−
4.0
8.0
12.5
2.75
5.50
8.25
−
−
−
4.0
8.0
12.5
−
−
−
5.0
5.0
10
15
–1.0
–0.25
–0.62
–1.8
−
−
−
−
–0.75
–0.2
–0.4
–1.5
–1.7
–0.36
–0.9
–3.5
−
−
−
−
–0.55
–0.14
–0.15
–1.0
−
−
−
−
IOL
5.0
10
15
0.64
1.6
4.2
−
−
−
0.51
1.1
3.4
0.88
2.25
8.8
−
−
−
0.36
0.7
2.4
−
−
−
mAdc
Input Current
Iin
15
−
±0.1
−
±0.00001
±0.1
−
±1.0
mAdc
Input Capacitance
(Vin = 0)
Cin
−
−
−
−
5.0
7.5
−
−
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
−
−
−
0.25
0.5
1.0
−
−
−
0.0005
0.0010
0.0015
0.25
0.5
1.0
−
−
−
7.5
15
30
mAdc
IT
5.0
10
15
Symbol
Characteristic
Input Voltage
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
(VO = 0.5 Vdc)
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
“1” Level
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
VIH
VDD
Vdc
Vdc
IOH
Source
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Sink
Total Supply Current (Notes 3, 4)
(Dynamic plus Quiescent,
Per Gate CL = 50 pF)
Vdc
mAdc
IT = (0.3 mA/kHz) f + IDD/N
IT = (0.6 mA/kHz) f + IDD/N
IT = (0.8 mA/kHz) f + IDD/N
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL − 50) Vfk
where: IT is in mH (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates
per package.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
Propagation Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 30 ns
tPLH, tPHL = (0.66 ns/pF) CL + 22 ns
tPLH, tPHL = (0.50 ns/pF) CL + 15 ns
VDD
Vdc
Min
Typ
(Note 6)
Max
5.0
10
15
−
−
−
180
90
65
360
180
130
5.0
10
15
−
−
−
100
50
40
200
100
80
5.0
10
15
−
−
−
90
50
40
180
100
80
ns
ns
tPLH, tPHL
ns
5. The formulas given are for the typical characteristics only at 25_C.
6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
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3
Unit
MC14001UB, MC14011UB
ORDERING INFORMATION
Package
Shipping†
MC14001UBDG
SOIC−14
(Pb−Free)
55 Units / Rail
NLV14001UBDG*
SOIC−14
(Pb−Free)
55 Units / Rail
MC14001UBDR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
NLV14001UBDR2G*
SOIC−14
(Pb−Free)
2500 / Tape & Reel
MC14011UBDG
SOIC−14
(Pb−Free)
55 Units / Rail
NLV14011UBDG*
SOIC−14
(Pb−Free)
55 Units / Rail
MC14011UBDR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
NLV14011UBDR2G*
SOIC−14
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
20 ns
VDD
INPUT
14
PULSE
GENERATOR
INPUT
OUTPUT
20 ns
VDD
90%
50%
10%
0V
tPLH
tPHL
*
CL
7
VSS
*All unused inputs of AND, NAND gates must be
connected to VDD.
All unused inputs of OR, NOR gates must be
connected to VSS.
tTHL
Figure 1. Switching Time Test Circuit and Waveforms
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4
VOH
90%
50%
10%
OUTPUT
INVERTING
VOL
tTLH
MC14001UB, MC14011UB
MC14001UB CIRCUIT SCHEMATIC
VDD
14
3
MC14011UB CIRCUIT SCHEMATIC
(1/4 of Device Shown)
10
14 VDD
1
8
2
9
3, 4, 10, 11
1, 6, 8, 13
2, 5, 9, 12
6
13
5
12
12
10
8.0
8.0
6.0
5.0 Vdc
15 Vdc
b a
a
4.0
b
4.0
10 Vdc
2.0
2.0
-4.0
VGS = -5.0 Vdc
a b
0
2.0 4.0 6.0 8.0 10 12 14 16
Vin, INPUT VOLTAGE (Vdc)
a
c
-10 Vdc
5.0 Vdc
4.0
10
c
b
a TA = -55°C
b TA = +25°C
c TA = +125°C
-8.0
b
a
6.0
Figure 3. Typical Voltage Transfer
Characteristics versus Temperature
a
-6.0
a TA = +125°C
b TA = -55°C
8.0
0
I D, DRAIN CURRENT (mAdc)
I D, DRAIN CURRENT (mAdc)
0
10 Vdc
10
2.0
Figure 2. Typical Voltage and
Current Transfer Characteristics
-2.0
12
0
2.0 4.0 6.0 8.0 10 12 14 16
Vin, INPUT VOLTAGE (Vdc)
0
VDD = 15 Vdc Unused input
connected to
b
VSS.
a
14
a
b
6.0
0
16
VDD = 15 Vdc TA = +25°C
Unused input
connected to
VSS.
a One input only
10 Vdc
b Both inputs
14
Vout , OUTPUT VOLTAGE (Vdc)
11
Vout , OUTPUT VOLTAGE (Vdc)
16
7
VSS
I D, DRAIN CURRENT (mAdc)
4
7 VSS
b
c
-15 Vdc
b
8.0
15 Vdc
b
c
a
VGS = 10 Vdc
b
c
6.0
a TA = -55°C
b TA = +25°C
c TA = +125°C
4.0
a
2.0
b
5.0 Vdc
c
-10
-10
a
-8.0
-6.0
-4.0
VDS, DRAIN VOLTAGE (Vdc)
a
0
-2.0
0
0
Figure 4. Typical Output Source Characteristics
2.0
4.0
6.0
VDS, DRAIN VOLTAGE (Vdc)
8.0
Figure 5. Typical Output Sink Characteristics
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5
10
MC14001UB, MC14011UB
PACKAGE DIMENSIONS
D
SOIC−14 NB
CASE 751A−03
ISSUE K
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
b
0.25
M
C A
S
B
S
e
DETAIL A
h
A
X 45 _
M
A1
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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6
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MC14001UB/D
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