Preliminary Technical Information High Voltage Power MOSFETs VDSS ID25 IXTA4N150HV IXTT4N150HV RDS(on) = 1500V = 4A Ω ≤ 6Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 4 A IDM TC = 25°C, Pulse Width Limited by TJM 12 A IA EAS TC = 25°C TC = 25°C 4 350 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 280 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 2.5 4.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight TO-263 TO-268 G S D (Tab) TO-268 G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z z z High Blocking Voltage High Voltage Package Fast Intrinsic Diode Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z z V 5.0 V ±100 nA TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density 10 μA 100 μA Applications z z z 6 Ω High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100534B(04/13) IXTA4N150HV IXTT4N150HV Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 2.8 Ciss Coss 4.6 S 1576 pF 105 pF 35 pF 19 ns 23 ns 42 ns 22 ns 44.5 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-263 (HV) Outline 7.7 nC 21.7 nC PIN: 1 - Gate 2 - Source 3 - Drain 0.45 °C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A IF = IS, VGS = 0V, Note 1 1.3 V IF = 2A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.9 μs 15.0 A 6.7 μC TO-268 (HV) Outline PIN: Note 1 - Gate 2 - Source 3 - Drain 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA4N150HV IXTT4N150HV Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Output Characteristics @ T J = 125ºC 5.0 3.5 VGS = 10V 7V 4.5 VGS = 10V 6V 3.0 4.0 6V 2.5 ID - Amperes ID - Amperes 3.5 3.0 2.5 2.0 1.5 2.0 5V 1.5 1.0 1.0 5V 0.5 0.5 4V 4V 0.0 0.0 0 4 8 12 16 20 24 0 28 5 10 15 20 35 Fig. 3. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Drain Current 40 2.6 VGS = 10V VGS = 10V 2.4 2.6 TJ = 125ºC 2.2 R DS(on) - Normalized 2.2 I D = 4A 1.8 I D = 2A 1.4 1.0 2.0 1.8 1.6 1.4 1.2 0.6 TJ = 25ºC 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0.0 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 ID - Amperes ID - Amperes 30 VDS - Volts 3.0 R DS(on) - Normalized 25 VDS - Volts 2.5 2.0 2.5 TJ = 125ºC 2.0 25ºC 1.5 1.5 1.0 1.0 0.5 0.5 - 40ºC 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 100 125 150 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 IXTA4N150HV IXTT4N150HV Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 9 14 8 12 TJ = - 40ºC 7 IS - Amperes g f s - Siemens 10 6 25ºC 5 4 125ºC 8 6 TJ = 125ºC 3 4 2 TJ = 25ºC 2 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.4 0.5 0.6 0.7 ID - Amperes 0.8 0.9 1.0 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10 10,000 f = 1 MHz VDS = 750V I D = 2A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 1,000 Ciss Coss 100 2 Crss 0 10 0 5 10 15 20 25 30 35 40 45 0 5 10 15 QG - NanoCoulombs 20 25 30 35 40 VDS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward-Bias Safe Operating Area 1.2 100 BVDSS 1.1 1.0 0.9 VGS(th) TC = 25ºC Single Pulse RDS(on) Limit 10 ID - Amperes BVDSS & VGS(th) - Normalized TJ = 150ºC 25µs 100µs 1 1ms 10ms 100ms 0.1 0.8 DC 0.01 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1000 VDS - Volts 10000 IXTA4N150HV IXTT4N150HV Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N150 (4A) 9-12-12-C