NSC LMH6619MAENOPB Lmh6618 single/lmh6619 dual 130 mhz, 1.25 ma rrio operational amplifier Datasheet

LMH6618, LMH6619
www.ti.com
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers
Check for Samples: LMH6618, LMH6619
FEATURES
1
•
23
•
•
•
•
•
•
•
•
•
•
VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1,
Unless Otherwise Specified.
Operating Voltage Range 2.7V to 11V
Supply Current per Channel 1.25 mA
Small Signal Bandwidth 130 MHz
Input Offset Voltage (Limit at 25°C) ±0.75 mV
Slew Rate 55 V/µs
Settling Time to 0.1% 90 ns
Settling Time to 0.01% 120 ns
SFDR (f = 100 kHz, AV = +1, VOUT = 2 VPP) 100
dBc
0.1 dB Bandwidth (AV = +2) 15 MHz
Low Voltage Noise 10 nV/√Hz
•
•
Industrial Temperature Grade −40°C to +125°C
Rail-to-Rail Input and Output
APPLICATIONS
•
•
•
•
•
•
•
ADC Driver
DAC Buffer
Active Filters
High Speed Sensor Amplifier
Current Sense Amplifier
Portable Video
STB, TV Video Amplifier
DESCRIPTION
The LMH6618 (single, with shutdown) and LMH6619 (dual) are 130 MHz rail-to-rail input and output amplifiers
designed for ease of use in a wide range of applications requiring high speed, low supply current, low noise, and
the ability to drive complex ADC and video loads. The operating voltage range extends from 2.7V to 11V and the
supply current is typically 1.25 mA per channel at 5V. The LMH6618 and LMH6619 are members of the
PowerWise® family and have an exceptional power-to-performance ratio.
The amplifier’s voltage feedback design topology provides balanced inputs and high open loop gain for ease of
use and accuracy in applications such as active filter design. Offset voltage is typically 0.1 mV and settling time
to 0.01% is 120 ns which combined with an 100 dBc SFDR at 100 kHz makes the part suitable for use as an
input buffer for popular 8-bit, 10-bit, 12-bit and 14-bit mega-sample ADCs.
The input common mode range extends 200 mV beyond the supply rails. On a single 5V supply with a ground
terminated 150Ω load the output swings to within 37 mV of the ground rail, while a mid-rail terminated 1 kΩ load
will swing to 77 mV of either rail, providing true single supply operation and maximum signal dynamic range on
low power rails. The amplifier output will source and sink 35 mA and drive up to 30 pF loads without the need for
external compensation.
The LMH6618 has an active low disable pin which reduces the supply current to 72 µA and is offered in the
space saving 6-Pin SOT package. The LMH6619 is offered in the 8-Pin SOIC package. The LMH6618 and
LMH6619 are available with a −40°C to +125°C extended industrial temperature grade.
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerWise, WEBENCH are registered trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2012, Texas Instruments Incorporated
LMH6618, LMH6619
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
www.ti.com
Typical Application
IN
1 PF
549:
549:
150 pF
1.24 k:
+
V
+
+
V
1 nF
V
5V
0.1 PF
1 PF
0.01 PF
14.3 k:
0.1 PF
10 PF
C13
C11
-
C5
ADC121S101
+
5.6 PF
10 PF
C6
22:
LMH6618
GND
0.1 PF
390 pF
0.1 PF
14.3 k:
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
ESD Tolerance
(1)
(2)
Human Body Model
For input pins only
2000V
For all other pins
2000V
Machine Model
200V
Supply Voltage (VS = V+ – V−)
Junction Temperature
(1)
(2)
(3)
12V
(3)
150°C max
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
OPERATING RATINGS
(1)
Supply Voltage (VS = V+ – V−)
Ambient Temperature Range
2.7V to 11V
(2)
−40°C to +125°C
Package Thermal Resistance (θJA)
(1)
(2)
2
6-Pin SOT (DDC0006A)
231°C/W
8-Pin SOIC (D0008A)
160°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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Copyright © 2007–2012, Texas Instruments Incorporated
Product Folder Links: LMH6618 LMH6619
LMH6618, LMH6619
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SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
+3V ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, DISABLE = 3V, VCM = VO = V+/2, AV =
+1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol
Parameter
Condition
Min
(2)
Typ
(3)
Max
(2)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
120
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
56
MHz
GBW
Gain Bandwidth (LMH6618)
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
55
71
MHz
GBW
Gain Bandwidth (LMH6619)
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
55
63
MHz
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
13
AV = 2, RL = 150Ω, VOUT = 2 VPP
13
MHz
Peak
Peaking
AV = 1, CL = 5 pF
1.5
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP ,
RF = RG = 825Ω
15
MHz
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
%
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
deg
36
ns
46
V/μs
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT= 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
61
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
47
36
ns
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
dBc
en
Input Voltage Noise Density
f = 100 kHz
10
nV//√Hz
in
Input Current Noise Density
f = 100 kHz
1
pA//√Hz
CT
Crosstalk (LMH6619)
f = 5 MHz, VIN = 2 VPP
80
dB
VCM = 0.5V (pnp active)
VCM = 2.5V (npn active)
0.1
Input, DC Performance
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Temperature Drift
IB
Input Bias Current
(4)
±0.75
±1.3
mV
μV/°C
0.8
VCM = 0.5V (pnp active)
−1.4
−2.6
VCM = 2.5V (npn active)
+1.0
+1.8
±0.27
μA
μA
IOS
Input Offset Current
0.01
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
MΩ
CMVR
Common Mode Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −0.1V to 1.4V
78
96
VCM Stepped from 2.0V to 3.1V
81
107
RL = 1 kΩ to +2.7V or +0.3V
85
98
RL = 150Ω to +2.6V or +0.4V
76
82
AOL
(1)
(2)
(3)
(4)
Open Loop Voltage Gain
−0.2
3.2
V
dB
dB
Boldface limits apply to temperature range of −40°C to 125°C
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright © 2007–2012, Texas Instruments Incorporated
Product Folder Links: LMH6618 LMH6619
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LMH6618, LMH6619
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+3V ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, DISABLE = 3V, VCM = VO = V+/2, AV =
+1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol
Parameter
Condition
Min
Typ
Max
RL = 1 kΩ to V+/2
50
56
62
RL =150Ω to V+/2
160
172
198
RL = 1 kΩ to V+/2
60
66
74
RL = 150Ω to V+/2
170
184
217
RL = 150Ω to V−
29
39
43
RL = 1 kΩ to V+/2
50
56
62
RL =150Ω to V+/2
160
172
198
RL = 1 kΩ to V+/2
62
68
76
RL =150Ω to V+/2
175
189
222
RL = 150Ω to V−
34
44
48
(2)
(3)
(2)
Units
Output DC Characteristics
VOUT
Output Voltage Swing High (LMH6618)
(Voltage from V+ Supply Rail)
Output Voltage Swing Low (LMH6618)
(Voltage from V− Supply Rail)
Output Voltage Swing High (LMH6619)
(Voltage from V+ Supply Rail)
Output Voltage Swing Low (LMH6619)
(Voltage from V− Supply Rail)
IOUT
Linear Output Current
VOUT = V+/2
ROUT
Output Resistance
f = 1 MHz
(5)
±25
mV from
either rail
mV from
either rail
±35
mA
0.17
Ω
Enable Pin Operation
Enable High Voltage Threshold
Enabled
Enable Pin High Current
VDISABLE = 3V
Enable Low Voltage Threshold
Disabled
Enable Pin Low Current
VDISABLE = 0V
2.0
V
0.04
µA
1.0
V
1
µA
ton
Turn-On Time
25
ns
toff
Turn-Off Time
90
ns
104
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
IS
Supply Current (LMH6618)
RL = ∞
1.2
1.5
1.7
Supply Current (LMH6619)
(per channel)
RL = ∞
1.2
1.5
1.75
Disable Shutdown Current
DISABLE = 0V
59
85
ISD
(5)
4
84
mA
μA
Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
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Copyright © 2007–2012, Texas Instruments Incorporated
Product Folder Links: LMH6618 LMH6619
LMH6618, LMH6619
www.ti.com
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
+5V ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, DISABLE = 5V, VCM = VO = V+/2, AV =
+1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
(1)
Typ
(2)
Max
(1)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
130
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
53
MHz
GBW
Gain Bandwidth (LMH6618)
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
64
MHz
GBW
Gain Bandwidth (LMH6619)
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
57
MHz
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
15
AV = 2, RL = 150Ω, VOUT = 2 VPP
15
MHz
Peak
Peaking
AV = 1, CL = 5 pF
0.5
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
RF = RG = 1 kΩ
15
MHz
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
%
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
deg
30
ns
55
V/μs
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
88
fC = 5 MHz, VO = 2 VPP, RL = 1 kΩ
61
44
ns
Distortion and Noise Performance
SFDR
Spurious Free Dynamic Range
dBc
en
Input Voltage Noise Density
f = 100 kHz
10
nV//√Hz
in
Input Current Noise Density
f = 100 kHz
1
pA//√Hz
CT
Crosstalk (LMH6619)
f = 5 MHz, VIN = 2 VPP
80
dB
VCM = 0.5V (pnp active)
VCM = 4.5V (npn active)
0.1
Input, DC Performance
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Temperature Drift
IB
Input Bias Current
(3)
±0.75
±1.3
0.8
mV
µV/°C
VCM = 0.5V (pnp active)
−1.5
−2.4
VCM = 4.5V (npn active)
+1.0
+1.9
±0.26
μA
μA
IOS
Input Offset Current
0.01
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
MΩ
CMVR
Common Mode Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −0.1V to 3.4V
81
98
VCM Stepped from 4.0V to 5.1V
84
108
RL = 1 kΩ to +4.6V or +0.4V
84
100
RL = 150Ω to +4.5V or +0.5V
78
83
AOL
(1)
(2)
(3)
Open Loop Voltage Gain
−0.2
5.2
V
dB
dB
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright © 2007–2012, Texas Instruments Incorporated
Product Folder Links: LMH6618 LMH6619
Submit Documentation Feedback
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LMH6618, LMH6619
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
www.ti.com
+5V ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, DISABLE = 5V, VCM = VO = V+/2, AV =
+1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
RL = 1 kΩ to V+/2
60
73
82
RL = 150Ω to V+/2
230
255
295
RL = 1 kΩ to V+/2
75
83
96
RL = 150Ω to V+/2
250
270
321
RL = 150Ω to V−
32
43
45
RL = 1 kΩ to V+/2
60
73
82
RL = 150Ω to V+/2
230
255
295
RL = 1 kΩ to V+/2
77
85
98
RL = 150Ω to V+/2
255
275
326
RL = 150Ω to V−
37
48
50
(1)
(2)
(1)
Units
Output DC Characteristics
VOUT
Output Voltage Swing High (LMH6618)
(Voltage from V+ Supply Rail)
Output Voltage Swing Low (LMH6618)
(Voltage from V− Supply Rail)
Output Voltage Swing High (LMH6619)
(Voltage from V+ Supply Rail)
Output Voltage Swing Low (LMH6619)
(Voltage from V− Supply Rail)
IOUT
Linear Output Current
VOUT = V+/2
ROUT
Output Resistance
f = 1 MHz
(4)
±25
mV from
either rail
mV from
either rail
±35
mA
0.17
Ω
Enable Pin Operation
Enable High Voltage Threshold
Enabled
Enable Pin High Current
VDISABLE = 5V
Enable Low Voltage Threshold
Disabled
Enable Pin Low Current
VDISABLE = 0V
3.0
V
1.2
µA
2.0
V
2.5
µA
ton
Turn-On Time
25
ns
toff
Turn-Off Time
90
ns
104
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
IS
Supply Current (LMH6618)
RL = ∞
1.25
1.5
1.7
Supply Current (LMH6619)
(per channel)
RL = ∞
1.3
1.5
1.75
Disable Shutdown Current
DISABLE = 0V
72
105
ISD
(4)
6
84
mA
μA
Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
Submit Documentation Feedback
Copyright © 2007–2012, Texas Instruments Incorporated
Product Folder Links: LMH6618 LMH6619
LMH6618, LMH6619
www.ti.com
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
±5V ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, DISABLE = 5V, VCM = VO = 0V, AV =
+1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
(1)
Typ
(2)
Max
(1)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
140
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
53
MHz
GBW
Gain Bandwidth (LMH6618)
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
65
MHz
GBW
Gain Bandwidth (LMH6619)
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
58
MHz
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
16
AV = 2, RL = 150Ω, VOUT = 2 VPP
15
MHz
Peak
Peaking
AV = 1, CL = 5 pF
0.05
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
RF = RG = 1.21 kΩ
15
MHz
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
%
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
deg
30
ns
57
V/μs
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
88
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
70
45
ns
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
dBc
en
Input Voltage Noise Density
f = 100 kHz
10
nV/√Hz
in
Input Current Noise Density
f = 100 kHz
1
pA/√Hz
CT
Crosstalk (LMH6619)
f = 5 MHz, VIN = 2 VPP
80
dB
VCM = −4.5V (pnp active)
VCM = 4.5V (npn active)
0.1
Input DC Performance
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Temperature Drift
IB
Input Bias Current
(3)
±0.75
±1.3
0.9
mV
µV/°C
VCM = −4.5V (pnp active)
−1.5
−2.4
VCM = 4.5V (npn active)
+1.0
+1.9
±0.26
μA
μA
IOS
Input Offset Current
0.01
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
MΩ
CMVR
Common Mode Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −5.1V to 3.4V
84
100
VCM Stepped from 4.0V to 5.1V
83
108
RL = 1 kΩ to +4.6V or −4.6V
86
95
RL = 150Ω to +4.3V or −4.3V
79
84
AOL
(1)
(2)
(3)
Open Loop Voltage Gain
−5.2
5.2
V
dB
dB
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright © 2007–2012, Texas Instruments Incorporated
Product Folder Links: LMH6618 LMH6619
Submit Documentation Feedback
7
LMH6618, LMH6619
SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
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±5V ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, DISABLE = 5V, VCM = VO = 0V, AV =
+1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
RL = 1 kΩ to GND
100
111
126
RL = 150Ω to GND
430
457
526
RL = 1 kΩ to GND
110
121
136
RL = 150Ω to GND
440
474
559
RL = 150Ω to V−
35
51
52
RL = 1 kΩ to GND
100
111
126
RL = 150Ω to GND
430
457
526
RL = 1 kΩ to GND
115
126
141
RL = 150Ω to GND
450
484
569
RL = 150Ω to V−
45
61
62
(1)
(2)
(1)
Units
Output DC Characteristics
VOUT
Output Voltage Swing High (LMH6618)
(Voltage from V+ Supply Rail)
Output Voltage Swing Low (LMH6618)
(Voltage from V− Supply Rail)
Output Voltage Swing High (LMH6619)
(Voltage from V+ Supply Rail)
Output Voltage Swing Low (LMH6619)
(Voltage from V− Supply Rail)
IOUT
Linear Output Current
VOUT = V+/2
ROUT
Output Resistance
f = 1 MHz
(4)
±25
mV from
either rail
mV from
either rail
±35
mA
0.17
Ω
Enable Pin Operation
Enable High Voltage Threshold
Enabled
Enable Pin High Current
VDISABLE = +5V
Enable Low Voltage Threshold
Disabled
Enable Pin Low Current
VDISABLE = −5V
0.5
V
16
µA
−0.5
V
17
µA
ton
Turn-On Time
25
ns
toff
Turn-Off Time
90
ns
104
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
DC, VCM = −4.5V, VS = 2.7V to 11V
IS
Supply Current (LMH6618)
RL = ∞
1.35
1.6
1.9
Supply Current (LMH6619)
(per channel)
RL = ∞
1.45
1.65
2.0
Disable Shutdown Current
DISABLE = −5V
103
140
ISD
(4)
8
84
mA
μA
Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
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Connection Diagram
VOUT
V
-
1
6
2
5
DISABLE
-
+
+IN
+
V
3
4
-IN
Figure 1. 6-Pin SOT – Top View
(See Package Number DDC0006A)
OUT A
1
8
+
V
A
-IN A
+IN A
2
-
+
7
3
6
B
+
V
-
4
OUT B
-IN B
5
+IN B
Figure 2. 8-Pin SOIC – Top View
(See Package Number D0008A)
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TYPICAL PERFORMANCE CHARACTERISTICS
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Closed Loop Frequency Response for Various Supplies
Closed Loop Frequency Response for Various Supplies
3
3
+
V = +1.5V
0
-3
±5V
±1.5V
+
V = +5V
GAIN (dB)
GAIN (dB)
-
V = -2.5V
0
-6
±2.5V
-9
-12
-15
+
V = +2.5V
-
V = -1.5V
-
V = -5V
-3
A = +1
-6
VOUT = 0.2V
-18 RL = 1 k:
CL = 5 pF
-21
1
AV = +1
RL = 150:||3 pF
10
100
VOUT = 0.2V
-9
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 3.
Figure 4.
Closed Loop Frequency Response for Various Supplies
Closed Loop Frequency Response for Various Supplies
3
3
+
+
V = +1.5V
V = +1.5V
-
V = +5V
-3
+
V = +2.5V
-
V = -5V
-
V = -2.5V
-6
-9
-12
AV = +2
-15 RL = 1 k:
VOUT = 0.2V
-18
1
10
100
-
0
V = -1.5V
+
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
0
V = -1.5V
+
V = +5V
-
-3
V = -5V
+
-6 V = +2.5V
V = -2.5V
-9
-12
AV = +2
RF = RG = 2 k:
-15 RL = 150:
VOUT = 0.4V
-18
1
10
1000
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 5.
Figure 6.
Closed Loop Frequency Response for
Various Temperatures
Closed Loop Frequency Response for Various
Temperatures
3
3
-40°C
0
-40°C
0
-3
-3
85°C
-9
AV = +1
125°C
+
-12 V = +2.5V
V = -2.5V
-15
VOUT = 0.2 VPP
-18 RL = 1 k:
CL = 10 pF
-21
1
10
10
25°C
GAIN (dB)
GAIN (dB)
25°C
-6
100
1000
-6
85°C
-9
AV = +1
+
-12 V = +2.5V
V = -2.5V
-15
VOUT = 0.2 VPP
-18 RL = 150:
CL = 10 pF
-21
1
10
125°C
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 7.
Figure 8.
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SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Closed Loop Gain vs. Frequency for Various Gains
Large Signal Frequency Response
3
3
+
V = +5V
0
A=1
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
0
-3
A=2
A=5
-6
A = 10
-9
+
-12 V = +2.5V
V = -2.5V
-15
RL = 1 k:
-18 CL = 5 pF
VOUT = 0.2V
-21
1
10
100
-
V = -5V
+
-3
V = +2.5V
+
-
V = +1.5V
V = -2.5V
-
-6
V = -1.5V
-9
-12
AV = +2
RF = RG = 2 k:
-15 RL = 1 k:
VOUT = 2V
-18
1
10
1000
FREQUENCY (MHz)
100
1000
FREQUENCY (MHz)
Figure 9.
Figure 10.
±0.1 dB Gain Flatness for Various Supplies
Small Signal Frequency Response with
Various Capacitive Load
0.3
±1.5V
0.1
±2.5V
0
±5V
GAIN (dB)
NORMALIZED GAIN (dB)
0.2
-0.1
-0.2
-0.3
0.01
0.10
1
10
100
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
CL = 30 pF
CL = 20 pF
CL = 10 pF
CL = 5 pF
CL = 0 pF
+
V = +5V
-
V = -5V
RL = 1 k:
VOUT = 0.2V
1
10
FREQUENCY (MHz)
1000
Figure 11.
Figure 12.
Small Signal Frequency Response with
Capacitive Load and Various RISO
HD2
vs.
Frequency and Supply Voltage
-20
11
+
V = +5V
9
-30
-
V = -5V
7
-40
DISTORTION (dBc)
VOUT = 0.2 VPP
5 C = 100 pF
L
GAIN (dB)
100
FREQUENCY (MHz)
RISO = 0
3
1
-1
RISO = 25
-3
RISO = 50
RISO = 100
-5
10
-
V = -1.5V
RF = 0:
A = +1
-60
+
V = +2.5V
-
V = -2.5V
-70
-80
+
V = +5V
-
-100
-9
1
+
V = +1.5V
RL = 1 k:
-90
RISO = 75
-7
-50
VOUT = 2 VPP
100
1000
-110
0.1
V = -5V
1
10
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 13.
Figure 14.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD3
vs.
Frequency and Supply Voltage
-20
V = +1.5V
-
RL = 1 k:
V = -1.5V
DISTORTION (dBc)
-50
-60
+
V = +2.5V
-70
-
V = -2.5V
-80
HD3, RL = 150:
-
RF = 0:
A = +1
-40
DISTORTION (dBc)
-20
VOUT = 2 VPP
-30 V+ = +2.5V
+
VOUT = 2 VPP
-30
HD2 and HD3
vs.
Frequency and Load
-40 V = -2.5V
RF = 0:
-50
A = +1
HD2, RL = 150:
-60
-70
-80
-90
-90
HD2, RL = 1 k:
+
V = +5V
-100
-100
-
HD3, RL = 1 k:
V = -5V
-110
0.1
1
-110
0.1
10
1
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 16.
HD2 and HD3
vs.
Common Mode Voltage
HD2 and HD3
vs.
Common Mode Voltage
HD2
-50
fIN = 1 MHz
+
V = +2.5V
-
-60
DISTORTION (dBc)
Figure 15.
V = -2.5V
-60
-80
-90
-100
-110
-120
0
1
2
V = +2.5V
3
4
5
-90
-100
-
6
7
8
9
10
-
3
4
5
6
7
8
Figure 17.
Figure 18.
HD2
vs.
Frequency and Gain
HD3
vs.
Frequency and Gain
-30
10
VOUT = 2 VPP
-40 V+ = +2.5V
-
-
V = -2.5V
-50
G = +10, HD2
DISTORTION (dBc)
RL = 1 k:
9
-30
VOUT = 2 VPP
-40 V+ = +2.5V
DISTORTION (dBc)
2
V = -2.5V
INPUT COMMON MODE VOLTAGE (V)
INPUT COMMON MODE VOLTAGE (V)
-50
1
V = +2.5V
-
V = -5V
V = -5V
0
+
+
V = +5V
-
-120
HD3
HD2
HD3
+
V = +5V
-110
V = -2.5V
V = -5V
V = -5V
RF = 0
A = +1
-80
+
-
-
RL = 1 k:
-70
HD3
HD3
+
V = +5V
VOUT = 1 VPP
-
V = -2.5V
RF = 0
A = +1
HD2
+
V = +5V
+
V = +2.5V
RL = 1 k:
-70
fIN = 100 kHz
HD2
VOUT = 1 VPP
DISTORTION (dBc)
-50
10
-60 RF = 2 k:
-70
-80
G = +1, HD2
-90
V = -2.5V
RL = 1 k:
-60 RF = 2 k:
G = +2, HD3
-70
G = +10, HD3
-80
-90
G = +1, HD3
-100
-100
G = +2, HD2
-110
0.1
12
1
10
-110
0.1
1
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 19.
Figure 20.
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SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD2
vs.
Output Swing
Open Loop Gain/Phase
120
120
100
PHASE
40
40
20
+
20
HD2 (dBc)
PHASE (°)
GAIN (dB)
60
GAIN
V = +2.5V
-
0 RL = 1 k:
CL = 5 pF
-20
1k
10k 100k
5 MHz
-60
-70
1 MHz
500 kHz
1M
10M
100M
-20
-90
-40
1G
-100
100 kHz
0
1
2
FREQUENCY (Hz)
-20
4
Figure 22.
HD3
vs.
Output Swing
HD2
vs.
Output Swing
+
-30
10 MHz
-40
5 MHz
+
V = +2.5V
HD2 (dBc)
-50
-60
-70
-80
5
-20
10 MHz
-
V = -2.5V
-40 AV = -1
-50 RL = 1 k:
HD3 (dBc)
3
VOUT (VPP)
Figure 21.
V = +2.5V
-30
10 MHz
-80
0
V = -2.5V
+
V = +2.5V
-40 V- = -2.5V
AV = -1
-50 RL = 1 k:
80
80
60
-30
100
-
AV = +2
RL = 1 k:
-70
1 MHz
-80
1 MHz
-90
V = -2.5V
5 MHz
-60
500 kHz
-90
500 kHz
-100
-100
100 kHz
100 kHz
-110
-110
0
1
2
3
4
5
0
1
2
3
VOUT (VPP)
VOUT (VPP)
Figure 23.
Figure 24.
HD2
vs.
Output Swing
HD3
vs.
Output Swing
4
5
-20
-20
10 MHz
-30
-30
10 MHz
-40
-40
-
-50
V = -2.5V
HD3 (dBc)
HD2 (dBc)
+
V = +2.5V
5 MHz
-50
AV = +2
-60
1 MHz
RL = 150:
-70
500 kHz
-80
+
V = -2.5V
-70
AV = +2
RL = 1 k:
1 MHz
-90
100 kHz
500 kHz
-100
100 kHz
-110
-110
0
1
2
-
-60
-80
-90
-100
V = +2.5V
5 MHz
3
4
5
0
1
2
3
VOUT (VPP)
VOUT (VPP)
Figure 25.
Figure 26.
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5
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD3
vs.
Output Swing
THD
vs.
Output Swing
-30
-20
-30
-40
+
V = +2.5V
5 MHz
-50
-50
-
5 MHz
V = -2.5V
THD (dBc)
HD3 (dBc)
10 MHz
-40
10 MHz
AV = +2
-60
RL = 150:
-70
1 MHz
+
V = +2.5V
-
-60
V = -2.5V
AV = -1
-70
RL = 1 k:
1 MHz
-80
500 kHz
-80
500 kHz
-90
-90
-100
100 kHz
100 kHz
-100
-110
0
1
2
3
4
0
5
1
2
3
4
5
OUTPUT SWING (VPP)
VOUT (VPP)
Figure 27.
Figure 28.
Settling Time
vs.
Input Step Amplitude
(Output Slew and Settle Time)
Input Noise
vs.
Frequency
1000
140
1000
+
SETTLING TIME (ns)
120
100 FALLING, 0.1%
80
60
RISING, 0.1%
40
AV = -1
VOLTAGE NOISE (nV/ Hz)
-
V = -2.5V
100
100
VOLTAGE NOISE
10
10
CURRENT NOISE (pA/ Hz)
V = +2.5V
+
20
V = +2.5V
-
V = -2.5V
0
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
CURRENT NOISE
100
1k
10k
100k
1M
1
10M
FREQUENCY (Hz)
OUTPUT SWING (VPP)
Figure 29.
Figure 30.
VOS
vs.
VOUT
VOS
vs.
VOUT
6.0
6.0
+
+
V = +2.5V
V = +2.5V
-
V = -2.5V
4.0
-
V = -2.5V
4.0
RL = 150:
RL = 1 k:
2.0
25°C
0
-2.0
14
-40°C
VOS (mV)
VOS (mV)
2.0
125°C
-40°C
25°C
0
-2.0
125°C
-4.0
-4.0
-6.0
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
-6.0
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
VOUT (V)
VOUT (V)
Figure 31.
Figure 32.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
VOS
vs.
VCM
VOS
vs.
VS (pnp)
0.3
0.3
-40°C
-40°C
0.2
0.2
0.1
VOS (mV)
VOS (mV)
0.1
25°C
0
-0.1
-0.2
125°C
-0.3
0
25°C
-
-0.1 V = -0.5V
+
VS = V - V
-0.2 VCM = 0V
-0.4
+
V = +2.5V
-0.5
-0.3
-
125°C
V = -2.5V
-0.6
-0.5
-0.4
0.5
1.5
2.5
3.5
4.5
5.5
2
3
4
5
6
7
8
9
10 11 12
VS (V)
VCM (V)
Figure 33.
Figure 34.
VOS
vs.
VS (npn)
VOS
vs.
IOUT
0.6
0.3
+
V = +2.5V
-40°C
0.2
-
0.4
0.1
-40°C
V = -2.5V
0.2
VOS (mV)
VOS (mV)
25°C
0
125°C
-0.1
-0.2
125°C
-
VS = V - V
-0.3
25°C
-0.2
-0.4
+
V = +0.5V
+
0
-0.6
VCM = 0V
-0.4
2
3
4
5
6
7
8
9
-0.8
-40 -30 -20 -10
10 11 12
10
IOUT (mA)
Figure 35.
Figure 36.
VOS Distribution (pnp and npn)
IB
vs.
VS (pnp)
9
20
30
40
-1.0
-
8
V = -0.5V
7
VS = V - V
+
-
VCM = 0V
6
25°C
IBIAS (PA)
RELATIVE FREQUENCY (%)
0
VS (V)
5
4
-1.5
-40°C
3
125°C
2
1
-0.
7
-0. 0
60
-0.
5
-0. 0
40
-0.
30
-0.
20
-0.
10
0
0.1
0
0.2
0
0.3
0
0.4
0
0.5
0
0.6
0
0.7
0
0
-2.0
0
2
4
6
8
10
12
VS (V)
VOS (mV)
Figure 37.
Figure 38.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
IB
vs.
VS (npn)
IS
vs.
VS
1.8
1.5
+
V = +0.5V
VS = V+ - V
1.6
VCM = 0V
1.4
125°C
25°C
1.2
125°C
IS (mA)
IBIAS (PA)
-
25°C
1.0
-40°C
1.0
0.8
-
0.6
V = -0.5V
-40°C
+
-
VS = V - V
0.4
VCM = 0.5V
0.5
0
2
4
8
6
10
0.2
0
12
2
4
VS (V)
150
Figure 39.
Figure 40.
VOUT
vs.
VS
VOUT
vs.
VS
600
VOLTAGE VOUT IS
+
RL = 1 k: to
25°C
200
VOUT (mV)
VOUT (mV)
MID-RAIL
0
125°C
50
RL = 150: to
MID-RAIL
0
-40°C
400
VOLTAGE VOUT IS
125°C
VOLTAGE VOUT IS
-
-
ABOVE V SUPPLY
2
4
6
8
10
600
12
ABOVE V SUPPLY
2
4
6
8
10
12
VS (V)
VS (V)
Figure 41.
Figure 42.
VOUT
vs.
VS
Closed Loop Output Impedance
vs.
Frequency AV = +1
1000
20
V = +2.5V
ABOVE V SUPPLY
V = -2.5V
RL = 150: to GND
-40°C
-
OUTPUT IMPEDANCE (:)
-
V = 0V
25
+
VOLTAGE VOUT IS
-
VOUT (mV)
25°C
200
100
150
12
BELOW V SUPPLY
400
50
-40°C
10
VOLTAGE VOUT IS
+
BELOW V SUPPLY
100
8
6
VS (V)
30
25°C
35
100
10
1
0.1
125°C
40
0
2
4
6
8
10
12
0.01
0.001
+
Figure 43.
16
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0.01
0.1
1
10
100
FREQUENCY (MHz)
V (V)
Figure 44.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
PSRR
vs.
Frequency
PSRR
vs.
Frequency
120
120
100
100
-PSRR
-PSRR
80
PSRR (dB)
PSRR (dB)
80
+PSRR
60
40
20
+PSRR
60
40
20
+
V = +2.5V
V = -2.5V
0
10 100 1k
+
V = +1.5V
-
-
V = -1.5V
10k 100k 1M
0
10
10M 100M
100
1k
10k 100k 1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 45.
Figure 46.
CMRR
vs.
Frequency
Crosstalk Rejection vs. Frequency (Output to Output)
100
110
+
+
V = +2.5V
-
V = -2.5V
CROSSTALK REJECTION (dB)
V = +2.5V
100
V = -2.5V
90
CMRR (dB)
10M 100M
80
70
60
50
-
VOUTCHA = 2 VPP
90
AVCHB = 2V/V
80
70
40
0.01
0.1
1
10
60
100k
100
1M
10M
100M
FREQUENCY (MHz)
FREQUENCY (Hz)
Figure 47.
Figure 48.
Small Signal Step Response
Small Signal Step Response
50 mV/DIV
50 mV/DIV
30
0.0001 0.001
+
V = +2.5V
+
V = +1.5V
-
-
V = -1.5V
A = +1
V = -2.5V
A = +1
VOUT = 0.2V
VOUT = 0.2V
RL = 1 k:
RL = 1 k:
25 ns/DIV
25 ns/DIV
Figure 49.
Figure 50.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Small Signal Step Response
50 mV/DIV
50 mV/DIV
Small Signal Step Response
+
V = +5V
+
V = +2.5V
-
-
V = -2.5V
A = -1
VOUT = 0.2V
VOUT = 0.2V
RL = 1 k:
RL = 1 k:
25 ns/DIV
25 ns/DIV
Figure 51.
Figure 52.
Small Signal Step Response
Small Signal Step Response
+
V = +1.5V
50 mV/DIV
50 mV/DIV
V = -5V
A = +1
+
V = +5V
-
-
18
V = -1.5V
A = -1
V = -5V
A = -1
VOUT = 0.2V
VOUT = 0.2V
RL = 1 k:
RL = 1 k:
25 ns/DIV
25 ns/DIV
Figure 53.
Figure 54.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Small Signal Step Response
50 mV/DIV
50 mV/DIV
Small Signal Step Response
+
V = +2.5V
-
-
V = -2.5V
A = +2
V = -1.5V
A = +2
VOUT = 0.2V
VOUT = 0.2V
RL = 150:
RL = 150:
25 ns/DIV
25 ns/DIV
Figure 55.
Figure 56.
Small Signal Step Response
Large Signal Step Response
500 mV/DIV
50 mV/DIV
+
V = +1.5V
+
V = +5V
-
+
V = +2.5V
-
V = -5V
A = +2
V = -2.5V
A = +1
VOUT = 0.2V
VOUT = 2V
RL = 150:
RL = 1 k:
25 ns/DIV
50 ns/DIV
Figure 57.
Figure 58.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Large Signal Step Response
Overload Recovery Waveform
6
+
VOUT
V = +5V
-
V = -5V
A = +5
2
2V/DIV
500 mV/DIV
4
+
V = +2.5V
-
0
V = -2.5V
A = +2
-2
VOUT = 2V
-4
VIN
RL = 150:
-6
50 ns/DIV
100 ns/DIV
Figure 59.
Figure 60.
IS
vs.
VDISABLE
1600
125°C
+
V = +2.5V
1400
-
V = -2.5V
25°C
1200
-40°C
IS (PA)
1000
800
600
400
200
0
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
VDISABLE (V)
Figure 61.
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APPLICATION INFORMATION
The LMH6618 and LMH6619 are based on TI’s proprietary VIP10 dielectrically isolated bipolar process. This
device family architecture features the following:
• Complimentary bipolar devices with exceptionally high ft (∼8 GHz) even under low supply voltage (2.7V) and
low bias current.
• Common emitter push-push output stage. This architecture allows the output to reach within millivolts of either
supply rail.
• Consistent performance from any supply voltage (2.7V - 11V) with little variation with supply voltage for the most
important specifications (e.g. BW, SR, IOUT.)
• Significant power saving compared to competitive devices on the market with similar performance.
With 3V supplies and a common mode input voltage range that extends beyond either supply rail, the LMH6618
and LMH6619 are well suited to many low voltage/low power applications. Even with 3V supplies, the −3 dB BW
(at AV = +1) is typically 120 MHz.
The LMH6618 and LMH6619 are designed to avoid output phase reversal. With input over-drive, the output is
kept near the supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage).
Figure 62 shows the input and output voltage when the input voltage significantly exceeds the supply voltages.
4
V
+
VIN
3
2
1 V/DIV
1
0
-1
VOUT
-2
-3
-
V
-4
2 Ps/DIV
Figure 62. Input and Output Shown with CMVR Exceeded
If the input voltage range is exceeded by more than a diode drop beyond either rail, the internal ESD protection
diodes will start to conduct. The current flow in these ESD diodes should be externally limited.
The LMH6618 can be shutdown by connecting the DISABLE pin to a voltage 0.5V below the supply midpoint
which will reduce the supply current to typically less than 100 µA. The DISABLE pin is “active low” and should be
connected through a resistor to V+ for normal operation. Shutdown is guaranteed when the DISABLE pin is 0.5V
below the supply midpoint at any operating supply voltage and temperature.
In the shutdown mode, essentially all internal device biasing is turned off in order to minimize supply current flow
and the output goes into high impedance mode. During shutdown, the input stage has an equivalent circuit as
shown in Figure 63.
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RS
50:
INVERTING
INPUT
D4
D1
D3
D2
NON-INVERTING
INPUT
Figure 63. Input Equivalent Circuit During Shutdown
When the LMH6618 is shutdown, there may be current flow through the internal diodes shown, caused by input
potential, if present. This current may flow through the external feedback resistor and result in an apparent output
signal. In most shutdown applications the presence of this output is inconsequential. However, if the output is
“forced” by another device, the other device will need to conduct the current described in order to maintain the
output potential.
To keep the output at or near ground during shutdown when there is no other device to hold the output low, a
switch using a transistor can be used to shunt the output to ground.
SINGLE CHANNEL ADC DRIVER
The low noise and wide bandwidth make the LMH6618 an excellent choice for driving a 12-bit ADC. Figure 64
shows the schematic of the LMH6618 driving an ADC121S101. The ADC121S101 is a single channel 12-bit
ADC. The LMH6618 is set up in a 2nd order multiple-feedback configuration with a gain of −1. The −3 dB point is
at 500 kHz and the −0.01 dB point is at 100 kHz. The 22Ω resistor and 390 pF capacitor form an antialiasing
filter for the ADC121S101. The capacitor also stores and delivers charge to the switched capacitor input of the
ADC. The capacitive load on the LMH6618 created by the 390 pF capacitor is decreased by the 22Ω resistor.
Table 1 shows the performance data of the LMH6618 and the ADC121S101.
IN
1 PF
549:
549:
150 pF
1.24 k:
+
V
+
+
V
1 nF
V
5V
1 PF
0.1 PF
0.01 PF
14.3 k:
0.1 PF
10 PF
C13
C11
-
C5
ADC121S101
+
5.6 PF
10 PF
C6
22:
LMH6618
GND
0.1 PF
390 pF
0.1 PF
14.3 k:
Figure 64. LMH6618 Driving an ADC121S101
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Table 1. Performance Data for the LMH6618 Driving an ADC121S101
Parameter
Measured Value
Signal Frequency
100 kHz
Signal Amplitude
4.5V
SINAD
71.5 dB
SNR
71.87 dB
THD
−82.4 dB
SFDR
90.97 dB
ENOB
11.6 bits
When the op amp and the ADC are using the same supply, it is important that both devices are well bypassed. A
0.1 µF ceramic capacitor and a 10 µF tantalum capacitor should be located as close as possible to each supply
pin. A sample layout is shown in Figure 65. The 0.1 µF capacitors (C13 and C6) and the 10 µF capacitors (C11
and C5) are located very close to the supply pins of the LMH6618 and the ADC121S101.
Figure 65. LMH6618 and ADC121S101 Layout
SINGLE TO DIFFERENTIAL ADC DRIVER
Figure 66 shows the LMH6619 used to drive a differential ADC with a single-ended input. The ADC121S625 is a
fully differential 12-bit ADC. Table 2 shows the performance data of the LMH6619 and the ADC121S625.
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+
V
V
560:
10 PF
+
0.1 PF
10 PF
-
33:
+
V
LMH6619
+
INPUT
220 pF
0.1 PF
560:
560:
10 PF
560:
+
V
560:
-
ADC121S625
33:
LMH6619
+
220 pF
560:
Figure 66. LMH6619 Driving an ADC121S625
Table 2. Performance Data for the LMH6619 Driving an ADC121S625
Parameter
Measured Value
Signal Frequency
10 kHz
Signal Amplitude
2.5V
SINAD
67.9 dB
SNR
68.29 dB
THD
−78.6 dB
SFDR
75.0 dB
ENOB
11.0 bits
DIFFERENTIAL ADC DRIVER
The circuit in Figure 64 can be used to drive both inputs of a differential ADC. Figure 67 shows the LMH6619
driving an ADC121S705. The ADC121S705 is a fully differential 12-bit ADC. Performance with this circuit is
similar to the circuit in Figure 64.
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1 PF
549:
549:
+IN
150 pF
1.24 k:
+
V
V
1 nF
+
0.1 PF
10 PF
+
V
14.3 k:
-
22:
LMH6619
0.1 PF
+
10 PF
390 pF
0.1 PF
5.6 PF
14.3 k:
ADC121S705
1 PF
549:
549:
22:
-IN
390 pF
150 pF
1.24 k:
+
V
V
1 nF
+
0.1 PF
14.3 k:
10 PF
LMH6619
+
0.1 PF
5.6 PF
14.3 k:
Figure 67. LMH6619 Driving an ADC121S705
DC LEVEL SHIFTING
Often a signal must be both amplified and level shifted while using a single supply for the op amp. The circuit in
Figure 68 can do both of these tasks. The procedure for specifying the resistor values is as follows.
1. Determine the input voltage.
2. Calculate the input voltage midpoint, VINMID = VINMIN + (VINMAX – VINMIN)/2.
3. Determine the output voltage needed.
4. Calculate the output voltage midpoint, VOUTMID = VOUTMIN + (VOUTMAX – VOUTMIN)/2.
5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/(VINMAX – VINMIN)
6. Calculate the amount the voltage needs to be shifted from input to output, ΔVOUT = VOUTMID – gain x VINMID.
7. Set the supply voltage to be used.
8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS.
9. Set RF.
10. Calculate R1, R1 = RF/gain.
11. Calculate R2, R2 = RF/(noise gain-gain).
12. Calculate RG, RG= RF/(noise gain – 1).
Check that both the VIN and VOUT are within the voltage ranges of the LMH6618.
The following example is for a VIN of 0V to 1V with a VOUT of 2V to 4V.
1. VIN = 0V to 1V
2. VINMID = 0V + (1V – 0V)/2 = 0.5V
3. VOUT = 2V to 4V
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4. VOUTMID = 2V + (4V – 2V)/2 = 3V
5. Gain = (4V – 2V)/(1V – 0V) = 2
6. ΔVOUT = 3V – 2 x 0.5V = 2
7. For the example the supply voltage will be +5V.
8. Noise gain = 2 + 2/5V = 2.4
9. RF = 2 kΩ
10. R1 = 2 kΩ/2 = 1 kΩ
11. R2 = 2 kΩ/(2.4-2) = 5 kΩ
12. RG = 2 kΩ/(2.4 – 1) = 1.43 kΩ
V
+
+
V
R2
R1
VIN
+
VOUT
LMH6618
-
RG
RF
Figure 68. DC Level Shifting
4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER
Figure 69 shows the LMH6619 used as the amplifier in a multiple feedback low pass filter. This filter is set up to
have a gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH® Active Filter
Designer found at webench.ti.com.
1.05 k:
1.02 k:
150 pF
62 pF
+
V
+
V
0.1 PF
1.05 k:
1 PF
523:
0.1 PF
-
INPUT
330 pF
1.02 k:
LMH6619
-
+
LMH6619
820 pF
0.1 PF
1 PF
510:
OUTPUT
+
1 PF
0.1 PF
1 PF
-
V
-
V
Figure 69. 4th Order Multiple Feedback Low-Pass Filter
CURRENT SENSE AMPLIFIER
With it’s rail-to-rail input and output capability, low VOS, and low IB the LMH6618 is an ideal choice for a current
sense amplifier application. Figure 70 shows the schematic of the LMH6618 set up in a low-side sense
configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can be calculated to be VOS x
(1 + RF/RG) or 0.75 mV x 20.6 = 15.5 mV. Voltage error due to IO is IO x RF or 0.26 µA x 1 kΩ = 0.26 mV. Hence
total voltage error is 15.5 mV + 0.26 mV or 15.7 mV which translates into a current error of 15.7 mV/(2 V/A) = 7.9
mA.
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+5V
0A to 1A
51:
+
1 k:
0.1:
LMH6618
51:
1 k:
Figure 70. Current Sense Amplifier
TRANSIMPEDANCE AMPLIFIER
By definition, a photodiode produces either a current or voltage output from exposure to a light source. A
Transimpedance Amplifier (TIA) is utilized to convert this low-level current to a usable voltage signal. The TIA
often will need to be compensated to insure proper operation.
CF
RF
VS
LMH6618
CPD
CIN
+
Figure 71. Photodiode Modeled with Capacitance Elements
Figure 71 shows the LMH6618 modeled with photodiode and the internal op amp capacitances. The LMH6618
allows circuit operation of a low intensity light due to its low input bias current by using larger values of gain (RF).
The total capacitance (CT) on the inverting terminal of the op amp includes the photodiode capacitance (CPD) and
the input capacitance of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of
the circuit. The noise gain of this circuit determines the stability and is defined by:
NG =
1 + sRF (CT + CF)
1 + sCFRF
(1)
1
1
Where, fZ #
and fP =
2SRFCF
2SRFCT
(2)
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OP AMP OPEN
LOOP GAIN
I-V GAIN (:)
GAIN (dB)
NOISE GAIN (NG)
1 + sRF (CT + CF)
1 + sRFCF
1+
CIN
CF
0 dB
FREQUENCY
fz #
1
2SRFCT
fP =
1
GBWP
2SRFCF
Figure 72. Bode Plot of Noise Gain Intersecting with Op Amp Open-Loop Gain
Figure 72 shows the bode plot of the noise gain intersecting the op amp open loop gain. With larger values of
gain, CT and RF create a zero in the transfer function. At higher frequencies the circuit can become unstable due
to excess phase shift around the loop.
A pole at fP in the noise gain function is created by placing a feedback capacitor (CF) across RF. The noise gain
slope is flattened by choosing an appropriate value of CF for optimum performance.
Theoretical expressions for calculating the optimum value of CF and the expected −3 dB bandwidth are:
CF =
CT
2SRF(GBWP)
(3)
GBWP
f-3 dB = 2SR C
F T
(4)
Equation 4 indicates that the −3 dB bandwidth of the TIA is inversely proportional to the feedback resistor.
Therefore, if the bandwidth is important then the best approach would be to have a moderate transimpedance
gain stage followed by a broadband voltage gain stage.
Table 3 shows the measurement results of the LMH6618 with different photodiodes having various capacitances
(CPD) and a feedback resistance (RF) of 1 kΩ.
Table 3. TIA (Figure 1) Compensation and Performance Results
28
CPD
CT
f −3 dB CAL
f −3 dB MEAS
Peaking
(pF)
(pF)
(pF)
(pF)
(MHz)
(MHz)
(dB)
22
24
7.7
5.6
23.7
20
0.9
47
49
10.9
10
16.6
15.2
0.8
100
102
15.8
15
11.5
10.8
0.9
222
224
23.4
18
7.81
8
2.9
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CF
CAL
CF
USED
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Figure 73 shows the frequency response for the various photodiodes in Table 3.
6
NORMALIZED I-V GAIN (dB)
3
0
CPD = 22 pF,
-3
CF = 10 pF
-6
-9
-12
CF = 5.6 pF
CPD = 47 pF,
CPD = 100 pF,
CF = 15 pF
-15
CPD = 222 pF,
CF = 18 pF
-18
100k
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 73. Frequency Response for Various Photodiode and Feedback Capacitors
When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op
amp noise voltage, feedback resistor thermal noise, input noise current, photodiode noise current) do not all
operate over the same frequency band. Therefore, when the noise at the output is calculated, this should be
taken into account. The op amp noise voltage will be gained up in the region between the noise gain’s zero and
pole (fZ and fP in Figure 72). The higher the values of RF and CT, the sooner the noise gain peaking starts and
therefore its contribution to the total output noise will be larger. It is obvious to note that it is advantageous to
minimize CIN by proper choice of op amp or by applying a reverse bias across the diode at the expense of
excess dark current and noise.
DIFFERENTIAL CABLE DRIVER FOR NTSC VIDEO
The LMH6618 and LMH6619 can be used to drive an NTSC video signal on a twisted-pair cable. Figure 74
shows the schematic of a differential cable driver for NTSC video. This circuit can be used to transmit the signal
from a camera over a twisted pair to a monitor or display located a distance. C1 and C2 are used to AC couple
the video signal into the LMH6619. The two amplifiers of the LMH6619 are set to a gain of 2 to compensate for
the 75Ω back termination resistors on the outputs. The LMH6618 is set to a gain of 1. Because of the DC bias
the output of the LMH6618 is AC coupled. Most monitors and displays will accept AC coupled inputs.
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+10V
C5
0.1 PF
+10V
C2
47 PF
J1
8
3
VIDEO
INPUT
GND
+
2
C8
0.1 PF
U1A
+
V
LMH6619
R5
10 k:
1
VOUT
-
R16
3.01 k:
R10
75:
C7
47 PF
R9
3.01 k:
GND
+10V
GND
GND
R4
10 k:
+ C6
10 PF
R13
3.01 k:
4
TWISTED-PAIR
R1
75:
C1
47 PF
+
GND
R7
3.01 k:
R8
3 k:
C3
20 PF
GND
R3
1.50 k:
R14
3.01 k:
3
5
-
+
V
LMH6618
+ V
2
GND
U2
1
C10
47 PF
J2
VIDEO
OUTPUT
GND
6
5
R2
3.3 k:
R12
150:
GND
+ C9
10 PF
U1B
LMH6619
V
4
+
C4
0.1 PF
7
R15
3.01 k: GND
R11
75:
VOUT
GND
GND
+10V
R6
10 k:
GND
GND
Figure 74. Differential Cable Driver
30
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PACKAGE OPTION ADDENDUM
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11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LMH6618MK/NOPB
ACTIVE
SOT
DDC
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
AE4A
LMH6618MKE/NOPB
ACTIVE
SOT
DDC
6
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
AE4A
LMH6618MKX/NOPB
ACTIVE
SOT
DDC
6
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
AE4A
LMH6619MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
LMH66
19MA
LMH6619MAE/NOPB
ACTIVE
SOIC
D
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
LMH66
19MA
LMH6619MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
LMH66
19MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LMH6619 :
• Automotive: LMH6619-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
LMH6618MK/NOPB
SOT
DDC
6
LMH6618MKE/NOPB
SOT
DDC
LMH6618MKX/NOPB
SOT
DDC
LMH6619MAE/NOPB
SOIC
LMH6619MAX/NOPB
SOIC
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
6
250
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
6
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
D
8
250
178.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMH6618MK/NOPB
SOT
DDC
6
1000
210.0
185.0
35.0
LMH6618MKE/NOPB
SOT
DDC
6
250
210.0
185.0
35.0
LMH6618MKX/NOPB
SOT
DDC
6
3000
210.0
185.0
35.0
LMH6619MAE/NOPB
SOIC
D
8
250
210.0
185.0
35.0
LMH6619MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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