Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 1/ 8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE50N10BFP BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=7V, ID=10A 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol Outline TO-220FP MTE50N10BFP G：Gate D：Drain S：Source G D S Ordering Information Device MTE50N10BFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE50N10BFP CYStek Product Specification Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 2/ 8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.14mH, ID=24 Amps, VDD=50V (Note 2) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAS 100 ±20 24* 17* 5.5 4.4 96* 24 EAS 40 EAR 4.2 42 21 2.1 1.4 ID IDSM PD PDSM TL 300 TPKG 260 Tj, Tstg -55~+175 Unit V A mJ W °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 3.5 58 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTE50N10BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit 100 2.0 - 76 10 26.6 34.2 4.0 ±100 1 25 36 46 V mV/°C V S nA 19.1 4 9.7 13.2 27.2 20.6 14.4 646 118 104 - 0.92 28 32 24 96 1.2 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ Test Conditions VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=15A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=15A VGS =7V, ID=10A nC VDD=50V, ID=24A,VGS=10V ns VDD=50V, ID=15A, VGS=10V, RG=6Ω pF VGS=0V, VDS=30V, f=1MHz A V ns nC IS=15A, VGS=0V VGS=0V, IF=24A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE50N10BFP CYStek Product Specification Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 4/ 8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 80 ID, Drain Current (A) 70 60 BVDSS, Normalized Drain-Source Breakdown Voltage 10V 9V 50 40 8V 30 7V 20 6.5V VGS=6V 10 2 4 6 8 VDS, Drain-Source Voltage(V) 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 1.2 -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=7V VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.4 ID=15A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 800 600 400 200 2 VGS=10V, ID=15A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 26.6mΩ typ. 0 0 0 MTE50N10BFP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 5/ 8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 100 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Ta=25°C Pulsed 0.01 0.001 8 6 4 VDS=50V ID=24A 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 100 ID, Maximum Drain Current(A) 100μs 10 1ms 10ms 1 100ms DC TC=25°C, Tj=150°C VGS=10V, RθJC=3.5°C/W Single Pulse 0.1 8 12 16 Qg, Total Gate Charge(nC) 20 30 10 μs RDSON Limited 4 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 0 25 20 15 10 5 VGS=10V, RθJC=3.5°C/W 0 0.01 0.1 MTE50N10BFP 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 6/ 8 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 2000 80 1800 VDS=10V 70 60 1400 Power (W) ID, Drain Current(A) TJ(MAX) =150°C TC=25°C RθJC=3.5°C/W 1600 50 40 30 1200 1000 800 600 20 400 10 200 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3.5°C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTE50N10BFP 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE50N10BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 8/ 8 TO-220FP Dimension Marking: Device Name E50N10B Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE50N10BFP CYStek Product Specification