NTTFS4H07N Power MOSFET 25 V, 66 A, Single N−Channel, m8−FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 18.5 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 2.64 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 66 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 33.8 W Pulsed Drain Current (tp = 10 ms) IDM 216 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 32 Apk, L = 0.1 mH) (Note 3) EAS 51 mJ Drain to Source dV/dt dV/dt 7 V/ns TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C Maximum Junction Temperature VGS MAX RDS(on) TYP QGTOT 4.5 V 7.1 mW 5.7 nC 10 V 4.8 mW 12.4 nC PIN CONNECTIONS MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter www.onsemi.com m8−FL (3.3 x 3.3 mm) (Top View) (Bottom View) N−CHANNEL MOSFET D (5−8) G (4) S (1,2,3) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 6 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 21 A, EAS = 22 mJ. THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 47.3 3.7 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 3 1 Publication Order Number: NTTFS4H07N/D NTTFS4H07N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15.5 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.1 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.1 3.7 mV/°C VGS = 10 V ID = 30 A 3.8 4.8 VGS = 4.5 V ID = 15 A 5.8 7.1 gFS VDS = 12 V, ID = 15 A 49 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 34 Total Gate Charge QG(TOT) 5.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Gate Resistance 771 VGS = 0 V, f = 1 MHz, VDS = 12 V pF 525 2.9 VGS = 4.5 V, VDS = 12 V; ID = 30 A QGS QGD nC 2.5 1.26 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 12.4 RG TA = 25°C 1.0 nC 2 W SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 7.6 VGS = 4.5 V, VDS = 12 V, ID = 15 A, RG = 3.0 W tf 32 ns 11.7 2.13 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 5 tr 28.3 td(OFF) VGS = 10 V, VDS = 12 V, ID = 15 A, RG = 3.0 W tf ns 14.5 1.65 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.78 TJ = 125°C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 23.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 11.6 ns 11.8 8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFS4H07N TYPICAL CHARACTERISTICS 70 60 VGS = 3.6 V VDS = 5 V 60 VGS = 10 V to 4 V 50 VGS = 3.4 V 40 VGS = 3.2 V 30 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 70 3.8 V VGS = 3.0 V 20 TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 TJ = 125°C 30 20 TJ = 25°C 0 2.0 2.5 3.0 3.5 Figure 2. Transfer Characteristics 0.006 0.005 0.004 0.003 4 5 6 7 8 9 10 4.0 0.008 T = 25°C 0.007 VGS = 4.5 V 0.006 0.005 VGS = 10 V 0.004 0.003 0.002 10 30 20 40 60 50 70 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 1E−04 VGS = 0 V ID = 20 A VGS = 10 V TJ = 150°C 1E−05 TJ = 125°C IDSS, LEAKAGE (A) 1.4 1E−06 1.3 1.2 TJ = 85°C 1E−07 1.1 1E−08 1.0 0.9 0.8 0.7 −50 1.5 Figure 1. On−Region Characteristics 0.007 1.5 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 1.6 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.008 3 TJ = −55°C 0 3.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 40 10 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 50 TJ = 25°C 1E−09 1E−10 −25 0 25 50 75 100 125 150 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 25 NTTFS4H07N VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 1400 TJ = 25°C VGS = 0 V 1200 1000 800 Ciss 600 Coss 400 200 Crss 0 0 5 10 15 20 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 2 4 6 8 10 14 12 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 20 VGS = 0 V 18 IS, SOURCE CURRENT (A) t, TIME (ns) Qgs 4 Qg, TOTAL GATE CHARGE (nC) td(off) 100 tr tf td(on) 10 16 14 12 TJ = 125°C TJ = 25°C 10 8 6 4 2 0 1 1 10 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 50 ms 10 100 ms 1 ms 1 10 ms 0 V < VGS < 10 V RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDD = 15 V ID = 15 A VGS = 10 V 0.01 QT 8 25 1000 0.1 10 100 22 20 ID = 21 A 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 4 150 NTTFS4H07N TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% R(t) (°C/W) 10 2% 1% 1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 PULSE TIME (sec) Figure 13. Thermal Characteristics 80 1000 ID, DRAIN CURRENT (A) 70 GFS (S) 60 50 40 30 20 100 10 10 0 1 0 10 20 30 40 50 60 0.0000001 0.000001 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 5 NTTFS4H07N ORDERING INFORMATION Package Shipping† NTTFS4H07NTAG WDFN8 (Pb-Free) 1500 / Tape & Reel NTTFS4H07NTWG WDFN8 (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM 1 WDFN8 (m8FL) CASE 511AB H07N A Y WW G 1 S S S G H07N AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 6 NTTFS4H07N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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