Intersil FSYC9055R1 Radiation hardened, segr resistant p-channel power mosfet Datasheet

[ /Title
(FSYC
9055D,
FSYC
9055R)
/Subject
(Radiation
Hardened,
SEGR
Resistant
PChannel
Power
MOSFETs)
/Autho
r ()
/Keywords
(Radiation
Hardened,
SEGR
Resistant PChannel
Power
MOSFETs)
/Creator ()
/DOCI
FSYC9055D, FSYC9055R
UCT
CT
ROD PRODU
P
E
T
E
E
T
R
L
U
5
O
OBS SUBSTITSTYC905
F
E
,
55D
SIBL
POS STYC90
F
July 1999
Features
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
Description
• 59A, -60V, rDS(ON) = 0.027Ω
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14Neutrons/cm2g
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSYC9055D1
10K
TXV
FSYC9055D3
100K
Commercial
FSYC9055R1
100K
TXV
FSYC9055R3
100K
Space
FSYC9055R4
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
Symbol
D
Formerly available as type TA17750.
G
S
Package
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1999
1
File Number
4525.1
FSYC9055D, FSYC9055R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
FSYC9055D, FSYC9055R
-60
-60
UNITS
V
V
59
38
177
±20
A
A
A
V
162
65
1.30
177
59
177
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
VDS = -48V,
VGS = 0V
Gate to Source Leakage Current
IGSS
VGS = ±20V
Drain to Source On-State Voltage
VDS(ON)
Drain to Source On Resistance
rDS(ON)12
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
MIN
TYP
MAX
UNITS
-60
-
-
V
TC = -55oC
-
-
-7.0
V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
-2.0
-
-6.0
V
-1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
nA
-
-
200
-
-
-1.79
V
TC = 25oC
-
0.017
0.027
Ω
TC = 125oC
-
-
0.043
Ω
-
-
55
ns
-
-
35
ns
-
-
85
ns
-
-
35
ns
-
-
280
nC
-
140
160
nC
-
-
17
nC
VGS = -12V, ID = 59A
ID = 38A,
VGS = -12V
VDD = -30V, ID = 59A,
RL = 0.51Ω, VGS = -12V,
RGS = 2.35Ω
tf
Qg(TOT)
VGS = 0V to -20V
Gate Charge at 12V
Qg(12)
VGS = 0V to -12V
Threshold Gate Charge
Qg(TH)
VGS = 0V to -2V
Total Gate Charge
VDD = -30V,
ID = 59A
Gate Charge Source
Qgs
-
38
49
nC
Gate Charge Drain
Qgd
-
26
38
nC
-6
-
V
Plateau Voltage
V(PLATEAU)
ID = 59A, VDS = -15V
-
Input Capacitance
CISS
6100
-
pF
COSS
VDS = -25V, VGS = 0V,
f = 1MHz
-
Output Capacitance
-
2200
-
pF
Reverse Transfer Capacitance
CRSS
-
300
-
pF
Thermal Resistance Junction to Case
RθJC
-
-
0.77
oC/W
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 59A
ISD = 59A, dISD/dt = 100A/µs
2
MIN
TYP
MAX
UNITS
-0.6
-
-1.8
V
-
-
120
ns
FSYC9055D, FSYC9055R
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
TC = 25oC, Unless Otherwise Specified
MIN
MAX
UNITS
(Note 3)
SYMBOL
BVDSS
VGS = 0, ID = 1mA
-60
-
V
VGS(TH)
VGS = VDS, ID = 1mA
-2.0
-6.0
V
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Gate to Source Threshold Volts
(Note 3)
Gate to Body Leakage
(Notes 2, 3)
TEST CONDITIONS
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = -48V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = -12V, ID = 59A
-
-1.79
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = -12V, ID = 38A
-
0.027
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
SYMBOL
Single Event Effects Safe Operating
Area
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
SEESOA
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
Ni
26
43
20
-60
Br
37
36
10
-60
Br
37
36
15
-48
Br
37
36
20
-36
I
60
31
0
-60
I
60
31
5
-48
I
60
31
10
-36
I
60
31
15
-24
I
60
31
20
-12
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 31 µ
123-70
1E-3
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
VDS (V)
-50
LIMITING INDUCTANCE (HENRY)
-60
1
-40
-30
2
-20
3
-10
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
TEMP = 25oC
0
0
5
10
15
VGS (V)
20
1E-7
-10
25
-30
-100
-300
-1000
DRAIN SUPPLY (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3
FSYC9055D, FSYC9055R
Typical Performance Curves Unless Otherwise Specified
(Continued)
500
70
TC = 25oC
ID , DRAIN CURRENT (A)
60
ID , DRAIN (A)
50
40
30
20
100
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
0
-50
0
50
100
TC , CASE TEMPERATURE (oC)
100µs
1
-1
150
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
-10
-100
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
-200
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, VGS = 12V, ID = 38A
NORMALIZED rDS(ON)
2.0
QG
-12V
QGS
QGD
1.5
1.0
0.5
VG
0.0
-80
-40
0
40
80
120
CHARGE
FIGURE 5. BASIC CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
NORMALIZED
THERMAL RESPONSE (ZθJC)
10
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
0.001
10-5
160
TJ , JUNCTION TEMPERATURE (oC)
PDM
SINGLE PULSE
10-4
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
t1
t2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4
101
FSYC9055D, FSYC9055R
Typical Performance Curves Unless Otherwise Specified
(Continued)
IAS , AVALANCHE CURRENT (A)
300
STARTING TJ = 25oC
100
STARTING TJ = 150oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
BVDSS
L
tP
+
CURRENT I
TRANSFORMER AS
VDS
IAS
VDD
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
+
50Ω
-
tP
VDD
50V-150V
DUT
tAV
50Ω
VGS ≤ 20V
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
tON
VDD
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VDS
0V
10%
DUT
VGS = -12V
10%
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUI
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
FSYC9055D, FSYC9055R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±20V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
Drain to Source On Resistance
rDS(ON)
TC = 25oC at Rated ID
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±25 (Note 7)
µA
±20% (Note 8)
Ω
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
VGS = -30V, t = 250µs
VGS = -30V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
MAX
UNITS
VDS = -48V, t = 10ms
9.0
A
IAS
VGS(PEAK) = -15V, L = 0.1mH
177
A
Thermal Response
∆VSD
tH = 10ms; VH = -25V; IH = 4A
65
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = -20V; IH = 4A
(Heat Sink Required)
135
mV
Safe Operating Area
Unclamped Inductive Switching
SYMBOL
SOA
TEST CONDITIONS
6
FSYC9055D, FSYC9055R
Rad Hard Data Packages - Harris Power Transistors
TXV Equivalent
C. Preconditioning - Attributes Data Sheet
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
D. Group A
- Attributes Data Sheet
F. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
2. Rad Hard TXV Equivalent - Optional Data Package
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
G. Group D
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
7
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FSYC9055D, FSYC9055R
SMD-2
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
E
D
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.129
0.139
3.27
3.53
-
b
0.135
0.145
3.43
3.68
-
D
0.520
0.530
13.20
13.46
-
D1
0.435
0.445
11.05
11.30
-
D2
0.115
0.125
2.92
3.17
-
E
0.685
0.695
17.40
17.65
-
E1
0.470
0.480
11.94
12.19
-
E2
0.152
0.162
3.86
4.11
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: INCH.
3. Revision 2 dated 6-98.
A
E1
E2
2
D1
D2
3
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
8
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