DMP6350S 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits ID Max TA = +25°C RDS(ON) Max 350mΩ @ VGS = -10V -1.5A 550mΩ @ VGS = -4.5V -1.2A -60V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ideal for high-efficiency power management applications. Battery Charging Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Weight: 0.009 grams (Approximate) Portable Power Adaptors D D G S G S Top View Internal Schematic Top View Ordering Information (Note 4) Notes: Part Number Case Packaging DMP6350S-7 SOT23 3,000/Tape & Reel DMP6350S-13 SOT23 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMP6350S Document number: DS38474 Rev. 3 - 2 P35 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: D = 2016) M = Month (ex: 9 = September) YM P35 Mar 3 2017 E Apr 4 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D May 2016 © Diodes Incorporated DMP6350S Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Continuous Drain Current (Note 6), VGS = -10V Unit V V IDM Value -60 ±20 -1.5 -1.2 -6 Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.72 176 1.17 108 34 -55 to +150 Unit W °C/W W °C/W °C/W °C TA = +25°C TA = +70°C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) -1.0 - -3.0 350 550 V RDS(ON) -1.8 257 343 VSD - -0.8 -1.2 V VDS = VGS, ID = -250μA VGS = -10V, ID = -0.9A VGS = -4.5V, ID = -0.8A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd - 206 15 11 17 2.0 4.1 0.5 0.8 3.6 3.8 12.3 7.3 8.2 2.7 - pF pF pF Ω nC nC nC nC ns ns ns ns ns nC tD(ON) tR tD(OFF) tF tRR QRR mΩ Test Condition VDS = -30V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -0.9A VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω IS = -1.0A, di/dt = -100A/μs IS = -1.0A, di/dt = -100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP6350S Document number: DS38474 Rev. 3 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMP6350S 4.0 4 VDS = -5V 3.5 VGS = -4.5V 3.0 VGS = -4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -10.0V VGS = -3.5V 2.0 VGS = -3.0V 1.0 3 2.5 2 1.5 1 VGS = -2.5V TA = 85oC TA = 125oC TA = 25oC TA = 150oC 0.5 TA = -55oC 0.0 0 0 1 2 3 4 5 1 0.5 0.45 VGS = -4.5V 0.4 0.35 0.3 VGS = -10V 0.25 0.2 0 1 2 3 4 5 3 4 1 0.8 0.6 ID = -900mA 0.4 0.2 0 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0.6 2 VGS = -10V 150℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.5 125℃ 0.4 85℃ 0.3 25℃ 0.2 -55℃ 0.1 0 1 2 3 4 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP6350S Document number: DS38474 Rev. 3 - 2 3 of 7 www.diodes.com 1.8 VGS = -10V, ID = -900mA 1.6 1.4 1.2 VGS = -4.5V, ID = -800mA 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature May 2016 © Diodes Incorporated 0.7 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP6350S 0.6 0.5 VGS = -4.5V, ID = -800mA 0.4 0.3 0.2 VGS = -10V, ID = -900mA 0.1 0 -50 -25 0 25 50 75 100 125 2 ID = -1mA 1.8 ID = -250μA 1.6 1.4 1.2 1 150 -50 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 4 1000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) -25 3 2 TJ = 85oC TJ = 125oC TJ = 25oC 1 TJ = 150oC Ciss 100 Coss 10 Crss TJ = -55oC 1 0 0 0.3 0.6 0.9 1.2 0 1.5 5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 10 RDS(ON) Limited ID, DRAIN CURRENT (A) VGS (V) 8 6 4 VDS = -30V, ID = -0.9A PW =100µs 1 PW =1ms PW =100ms PW =1s 0.01 2 0 0.001 0 1 2 3 4 5 Document number: DS38474 Rev. 3 - 2 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= -10V 0.1 1 PW =10s DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMP6350S PW =10ms 0.1 4 of 7 www.diodes.com May 2016 © Diodes Incorporated DMP6350S r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t) = r(t) * RθJA RθJA = 173℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP6350S Document number: DS38474 Rev. 3 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DMP6350S Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions Value (in mm) C Y1 X C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 X1 DMP6350S Document number: DS38474 Rev. 3 - 2 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DMP6350S IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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