PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P S G D (TAB) D D (TAB) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 52 A IDM TC = 25°C, pulse width limited by TJM -130 A IAR TC = 25°C - 52 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. z 6.0 5.5 3.0 2.5 g g g g z TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247) G BVDSS VGS = 0V, ID = - 250μA -100 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ± 20V, VDS = 0V ±100 nA IDSS VDS = VDSS VGS = 0V -10 μA -150 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 V - 4.5 z z z z z z D (TAB) D = Drain TAB = Drain International standard packages Fast intrinsic diode Dynamic dV/dt Rated Avalanche Rated Rugged PolarPTM process Low QG and Rds(on) characterization Low Drain-to-Tab capacitance Low package inductance - easy to drive and to protect Applications: z z Hight side switching Push-pull amplifiers DC Choppers Current regulators Automatic test equipment Advantages: V 50 mΩ z z z z z © 2008 IXYS CORPORATION, All rights reserved S Features: z Characteristic Values Min. Typ. Max. D G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D (TAB) D S TO-3P (IXTQ) z TJ = 125°C - 100V - 52A Ω 50mΩ TO-220 (IXTP) S TJ TJM Tstg = = ≤ RDS(on) TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 Low gate charge results in simple drive requirement Improved Gate, Avalanche and dynamic dV/dt ruggedness High power density Fast switching Easy to parallel DS99912A(5/08) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 12 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 20 S 2845 pF 1015 pF 275 pF 22 ns 29 ns 38 ns 22 ns 60 nC 17 nC 23 nC 0.42 °C/W RthJC RthCS (TO-3P)(TO-247) 0.21 °C/W (TO-220) 0.50 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = - 26A, VGS = 0V, Note 1 trr QRM IRM IF = - 26A, -di/dt = -100A/μs VR = - 50V, VGS = 0V 120 0.53 - 8.9 - 52 A - 200 A - 3.5 V ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-263 (IXTA) Outline TO-247 (IXTH) Outline ∅P 1 2 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 TO-3P (IXTQ) Outline TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain © 2008 IXYS CORPORATION, All rights reserved 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -130 -55 VGS = -10V - 9V -50 VGS = -10V -110 -45 - 9V -90 - 8V -35 ID - Amperes ID - Amperes -40 -30 -25 - 7V -20 - 8V -70 - 7V -50 - 6V -15 -30 - 6V -10 - 5V -5 - 5V -10 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 0 -3 -6 -9 -12 -15 -18 -21 -24 -27 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = - 26A vs. Junction Temperature -55 2.2 VGS = -10V - 9V -50 -30 VGS = -10V 2.0 ID - Amperes -40 RDS(on) - Normalized -45 - 8V -35 -30 - 7V -25 -20 - 6V -15 1.8 I D = - 52A 1.6 I D = - 26A 1.4 1.2 1.0 0.8 -10 - 5V 0.6 -5 0 0.4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 26A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -55 2.6 2.4 -50 VGS = -10V -45 -40 TJ = 125ºC 2.0 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 -35 -30 -25 -20 1.4 -15 1.2 -10 TJ = 25ºC 1.0 -5 0.8 0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 ID - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 8. Transconductance Fig. 7. Input Admittance -70 32 -60 28 TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC 24 25ºC g f s - Siemens ID - Amperes -50 -40 -30 -20 20 125ºC 16 12 8 -10 4 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 0 -10 -20 -30 VGS - Volts -40 -50 -60 -70 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -10 -160 -140 -9 VDS = - 50V -8 I D = - 26A I G = -1mA -120 -100 VGS - Volts IS - Amperes -7 -80 -60 -6 -5 -4 -3 TJ = 125ºC -40 TJ = 25ºC -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -5.0 5 10 15 VSD - Volts 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 1,000 10,000 f = 1 MHz 100µs 25µs 1ms -100 10ms ID - Amperes Capacitance - PicoFarads RDS(on) Limit @ VGS = -15V Ciss Coss 1,000 - 10 Crss DC, 100ms TJ = 150ºC TC = 25ºC Single Pulse 100 0 -5 -10 -15 -20 -25 VDS - Volts © 2008 IXYS CORPORATION, All rights reserved -30 -35 -40 -1 - 10 - 100 VDS - Volts IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_52P10P(B5)3-25-08-B