DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID max TA = +25°C RDS(ON) max 30mΩ @ VGS = 10V 6.2A 42mΩ @ VGS = 4.5V 5.2A Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) ideal for high-efficiency power management applications. Body Control Electronics Power Management Functions DC-DC Converters D2 D1 U-DFN2020-6 S2 G2 D2 G1 D1 G2 D1 D2 S1 G1 S2 S1 Pin1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMN3032LFDB-7 DMN3032LFDB-13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 N5 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN3032LFDB Document number: DS35730 Rev. 3 - 2 Mar 3 N5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) YM NEW PRODUCT 30V 2017 E Apr 4 May 5 2018 F Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov Dec N D September 2015 © Diodes Incorporated DMN3032LFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V TA = +25C TA = +75C Value 30 ±20 6.2 5.0 2 25 12 10 ID IS IDM IAS EAS Unit V V A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) RJA Total Power Dissipation (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 1.0 127 75 1.7 72 43 9 -55 to +150 RJA RJC TJ, TSTG Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Zero Gate Voltage Drain Current TJ = +150°C (Note 9) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IDSS IGSS 30 - - 1.0 100 ±100 V μA μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 RDS(ON) - mΩ VSD - 2.0 30 42 1.2 V Static Drain-Source On-Resistance 1.5 25 30 0.75 VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.8A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 500 52 44 2.3 5.0 10.6 1.3 1.8 2.2 2.6 9.7 2.0 - pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3032LFDB Document number: DS35730 Rev. 3 - 2 2 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN3032LFDB 20 30.0 VGS=4.0V VGS=10.0V VDS=5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 18 VGS=3.5V 20.0 VGS=4.5V VGS=3.0V 15.0 10.0 VGS=2.5V 14 12 10 TA=150℃ 8 TA=125℃ 6 4 TA=85℃ 5.0 TA=25℃ 2 VGS=2.0V 0 1 2 3 TA=-55℃ 0 0.0 4 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.05 0.04 VGS=4.5V 0.03 VGS=10V 0.02 0.01 0 1 3 5 7 9 11 13 15 17 19 85℃ 0.025 25℃ 0.02 -55℃ 0.015 0.01 0.005 0 2 4 6 8 10 12 14 16 18 3.5 4 4.5 5 18 20 0.04 0.02 ID=2.8A 0 2 20 4 6 8 10 12 14 16 1.8 VGS=10V, ID=5.0A 1.6 1.4 1.2 VGS=4.5V, ID=3.0A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature Figure 5. Typical On-Resistance vs. Drain Current and Temperature Document number: DS35730 Rev. 3 - 2 3 0.06 ID, DRAIN CURRENT (A) DMN3032LFDB 2.5 ID=3.6A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 150℃ 0.04 0.03 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic VGS= 10V 125℃ 1.5 0.08 21 0.05 0.035 1 0.1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.045 0.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) NEW PRODUCT 25.0 3 of 6 www.diodes.com September 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 2 0.08 0.07 0.06 0.05 VGS=4.5V, ID=3.0A 0.04 0.03 VGS=10V, ID=5.0A 0.02 0.01 1.8 1.6 1.2 -25 0 25 50 75 100 125 ID=250A 1 0.8 0.6 0 -50 ID=1mA 1.4 -50 150 -25 0 25 50 75 100 20 150 1000 f=1MHz CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 16 VGS=0V, TA=150℃ 14 12 VGS=0V, TA=125℃ 10 8 VGS=0V, TA=85℃ 6 VGS=0V, TA=25℃ 4 VGS=0V, TA=-55℃ 2 Ciss 100 Coss Crss 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 100 10 RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMN3032LFDB 6 VDS=15V, ID=3.6A 4 10 PW =10s PW =1s 0.1 0.01 0 2 4 6 8 10 12 Document number: DS35730 Rev. 3 - 2 TJ(Max)=150℃ TA=25℃ PW =100ms Single Pulse PW =10ms DUT on 1*MRP board PW =1ms VGS=4.5V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMN3032LFDB DC 1 2 0 PW =100µs Figure 12. SOA, Safe Operation Area 4 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN3032LFDB 1 NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 D=0.02 0.01 D=0.01 D=0.01 D=0.005 RRθJA(t)=r(t) * RθJA θJA(t)=r(t) * RθJA RRθJA=124℃/W θJA=1204℃/W Duty DutyCycle, Cycle,D=t1 D=t1// t2 t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A3 A1 Seating Plane D D2 D2 R0.1 (Pin # E 50 1 ID) z1 E2 z1 k L z DMN3032LFDB Document number: DS35730 Rev. 3 - 2 U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.15 All Dimensions in mm e b 5 of 6 www.diodes.com September 2015 © Diodes Incorporated DMN3032LFDB Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 C Dimensions C G G1 X X1 X2 Y Y1 Y2 NEW PRODUCT X1(2x) Y2 Y1(2x) G G1 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN3032LFDB Document number: DS35730 Rev. 3 - 2 6 of 6 www.diodes.com September 2015 © Diodes Incorporated