SemiHow HFW12N60S 600v n-channel mosfet Datasheet

BVDSS = 600 V
RDS(on) typ ȍ
HFW12N60S
ID = 12 A
600V N-Channel MOSFET
D2-PAK
D
FEATURES
G
‰ Originative New Design
S
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 38 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
600
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25୅)
12
A
Drain Current
– Continuous (TC = 100୅)
7.4
A
IDM
Drain Current
– Pulsed
48
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
870
mJ
IAR
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25୅) *
3.13
W
Power Dissipation (TC = 25୅)
- Derate above 25୅
225
W
1.78
W/୅
-55 to +150
୅
300
୅
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
0.56
RșJA
Junction-to-Ambient*
--
40
RșJA
Junction-to-Ambient
--
62.5
Units
୅/W
* When mounted on the minimum pad size recommended (PCB Mount)
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HFW12N60S
July 2016
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.0 A
--
0.53
0.65
Ÿ
VGS = 0 V, ID = 250 ᒺ
600
--
--
V
ID = 250 ᒺ, Referenced to 25୅
--
0.5
--
V/୅
VDS = 600 V, VGS = 0 V
--
--
1
ᒺ
VDS = 480 V, TC = 125୅
--
--
10
ᒺ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
ᒹ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
ᒹ
--
1835
2385
ᓂ
--
185
240
ᓂ
--
16
21
ᓂ
--
30
70
ᓩ
--
85
180
ᓩ
--
140
280
ᓩ
--
90
190
ᓩ
--
38
49
nC
--
8
--
nC
--
13
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 12 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480V, ID = 12 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
12
ISM
Pulsed Source-Drain Diode Forward Current
--
--
48
VSD
Source-Drain Diode Forward Voltage
IS = 12.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
ᓩ
Qrr
Reverse Recovery Charge
IS = 12.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
4.9
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=11mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFW12N60S
Electrical Characteristics TC=25 qC
HFW12N60S
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
RDS(ON)[Ÿ@
Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
2500
2000
Coss
1500
1000
Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
500
12
VDS = 120V
VGS, Gate-Source Voltage [V]
3500
10
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 12.0A
0
10-1
100
101
0
0
4
8
12
16
20
24
28
32
36
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
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HFW12N60S
Typical Characteristics
(continued)
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.5
1.0
* Note:
1. VGS=10V
2. ID=6.0A
0.5
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature[oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
14
Operation in This Area
is Limited by R DS(on)
10 Ps
12
101
ID, Drain Current [A]
100 Ps
1 ms
10 ms
100 ms
DC
100
10-1
* Notes :
1. TC = 25 oC
10-2
100
10
8
6
4
2
2. TJ = 150 oC
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
102
D=0.5
10-1
0.2
* Notes :
1. ZTJC(t) = 0.56 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-2
0.02
0.01
PDM
single pulse
t1
10-5
10-4
10-3
10-2
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͧ͑͢͡
HFW12N60S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HFW12N60S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HFW12N60S
Package Dimension
kYTwhrG
O{vTY]ZPG
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