Diodes DMN601K N-channel enhancement mode field effect transistor Datasheet

DMN601K
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
NEW PRODUCT
Features
•
•
•
•
•
•
•
•
Low On-Resistance: RDS(ON)
SOT-23
Low Gate Threshold Voltage
A
Low Input Capacitance
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
G
D
0.89
1.03
H
E
0.45
0.60
G
1.78
2.05
D
Fast Switching Speed
B
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
G TOP VIEW S
E
ESD Protected Up To 2kV
"Green" Device (Note 4)
D
K
Mechanical Data
•
•
•
•
•
•
•
•
C
M
H
2.80
3.00
Case: SOT-23
J
0.013
0.10
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
K
0.903
1.10
J
L
Drain
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish  Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
L
0.45
0.61
M
0.085
0.180
α
0°
8°
All Dimensions in mm
Gate
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
ESD protected up to 2kV
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
1.
2.
3.
4.
Symbol
Value
Units
VDSS
60
V
VGSS
±20
V
ID
300
800
mA
Pd
350
mW
RθJA
357
°C/W
Tj, TSTG
-65 to +150
°C
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10µS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30652 Rev. 2 - 2
1 of 4
www.diodes.com
DMN601K
 Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60


V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS


1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS


±10
µA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
1.6
2.5
V
VDS = 10V, ID = 1mA
RDS (ON)



2.0
3.0
Ω
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
|Yfs|
80


ms
VDS =10V, ID = 0.2A
Input Capacitance
Ciss


50
pF
Output Capacitance
Coss


25
pF
Reverse Transfer Capacitance
Crss


5.0
pF
OFF CHARACTERISTICS (Note 5)
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Notes:
1.00
VGS = 10V
8V
6V
5V
4V
3V
10V
VDS = 10V
Pulsed
8V
6V
1.0
ID, DRAIN CURRENT (A)
1.2
ID, DRAIN CURRENT (A)
VDS = 25V, VGS = 0V
f = 1.0MHz
5. Short duration test pulse used to minimize self-heating effect.
1.4
5V
0.8
4V
0.6
0.4
0.2
TA = 125°C
0.10
TA = 75°C
TA = 25°C
TA = -25°C
3V
0.01
0
0
1
2
1
5
4
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1.5
2
2.5
3
3.5
4.5
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
10
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
Electrical Characteristics
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 125°C
1.5
TA = 85°C
TA = 150°C
1
1
TA = -55°C
TA = 25°C
0.5
0
-50
-25
0
25
50
75
100
125
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
DS30652 Rev. 2 - 2
150
0.1
0.001
2 of 4
www.diodes.com
TA = 0°C
TA = -25°C
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
DMN601K
10
7
NEW PRODUCT
VGS = 5V
Pulsed
TA = 125°C
TA = 25°C
Pulsed
6
TA = 85°C
ID = 300mA
TA = 150°C
5
4
1
TA = -55°C
TA = 25°C
TA = 0°C
3
TA = -25°C
2
ID = 150mA
1
0.1
0
1
0.1
0.01
0.001
0
4
2
8
6
10
12
14
16
18
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
2.5
1
VGS = 10V
Pulsed
VGS = 0V
Pulsed
2
ID = 150mA
1.5
1
0.5
IDR, REVERSE DRAIN CURRENT (A)
ID = 300mA
TA = 125°C
TA = 150°C
0.1
TA = 85°C
TA = 25°C
TA = 0°C
0.01
TA = -25°C
TA = -55°C
0
0.001
-75 -50
-25
0
25
50
75
100 125 150
0.5
0
Tch, CHANNEL TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
VGS = 10V
TA= 25°C
Pulsed
0.1
0.01
VGS = 0V
0.001
0.5
0
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
DS30652 Rev. 2 - 2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
1
1
1
VGS = 10V
Pulsed
TA = 25°C
TA = 150°C
0.1
TA = -55°C
TA = 85°C
0.01
0.001
0.001
0.01
1
0.1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
3 of 4
www.diodes.com
DMN601K
Notes:
(Note 6)
Device
Packaging
Shipping
DMN601K-7
SOT-23
3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
YM
NEW PRODUCT
Ordering Information
K7K
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30652 Rev. 2 - 2
4 of 4
www.diodes.com
DMN601K
Similar pages