MBR1035CA thru MBR10200CA ® CREAT BY ART Pb MBR1035CA thru MBR10200CA Pb Free Plating Product 10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes TO-220AB Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds, 0.25"(6.35mm) from case Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position:Any Mounting torque: 5 in. - lbs, max Weight: 2.0 gram approximately .054(1.39) .045(1.15) .177(4.5)MAX .038(0.96) .019(0.50) Mechanical Data .139(3.55) MIN .624(15.87) Metal silicon junction, majority carrier conduction .196(5.00) .163(4.16) .1(2.54) .548(13.93) .419(10.66) .387(9.85) .50(12.7)MIN Plastic material used carriers Underwriters Laboratory Classification 94V-0 .269(6.85) Unit : inch (mm) .226(5.75) Features .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "CT" Negative Common Anode Suffix "CA" Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage MBR Symbol 1035 CA VRRM 35 VRMS 24 MBR 1045 CA 45 MBR 1050 CA 50 MBR 1060 CA 60 MBR 1090 CA 90 MBR MBR MBR 10100 10150 10200 CA CA CA 100 150 200 31 35 42 63 70 105 140 V 45 50 60 90 100 150 200 V Units V Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM Maximum Instantaneous Forward Voltage at (Note 2) IF=5A, TA=25℃ IF=5A, TA=125℃ IF=10A, T A=25℃ IF=10A, T A=125℃ Maximum Instantaneous Reverse Current @ T A=25 ℃ at Rated DC Blocking Voltage @ T A=125 ℃ Voltage Rate of Change (Rated V R) Maximum Typical Thermal Resistance Operating Junction Temperature Range Storage Temperature Range VF IR dV/dt RθJC 35 1.0 0.5 A 0.70 0.80 0.85 0.88 0.57 0.65 0.75 0.78 0.80 0.90 0.95 0.98 0.67 0.75 0.85 0.88 2 5 0.1 15 10 10,000 V mA mA 1.5 V/us ℃/W TJ - 65 to + 150 ℃ TSTG - 65 to + 175 ℃ Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MBR1035CA thru MBR10200CA ® CREAT BY ART RATINGS AND CHARACTERISTIC CURVES (MBR1035CA thru MBR10200CA) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 180 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 6 5 4 3 2 RESISTIVE OR INDUCTIVELOAD 1 8.3ms Single Half Sine Wave JEDEC Method 150 120 90 60 30 0 0 0 50 100 150 0 1 10 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 100 FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL FORWARD CHARACTERISRICS 100 TA=25oC Pulse Width=300us 1% Duty Cycle 100 MBR1050CA-1060CA 10 MBR1035CA-1045CA MBR1090CA-10100CA 1 MBR10150CA-10200CA INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 1000 10 TA=125℃ 1 TA=75℃ 0.1 0.01 TA=25℃ 0.001 0.1 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) 1.2 0 1.4 40 60 80 100 120 140 FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG FIG. 5- TYPICAL JUNCTION CAPACITANCE 10000 100 TA=25℃ f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 1000 1 0.1 100 0.1 1 10 REVERSE VOLTAGE (V) Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. 100 0.01 0.1 1 10 100 T-PULSE DURATION. (sec) Page 2/2 http://www.thinkisemi.com/