Thyristor SMD Type SCR Thyristor BT169 (KT169) 1.70 ■ Features 0.1 ● Repetitive peak off-state voltages :400V ● Average on-state current :0.5A ● RMS on-state current :0.8A 0.42 0.1 0.46 0.1 ● Non-repetitive peak on-state current :8A 1:GATE 2:ANODE 3:CATHODE ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Repetitive Forward and Reverse Blocking BT169-400 Voltages VDRM VRRM 400 V IT(AV) 0.5 IT(RMS) 0.8 Average on-state Current Forward Current RMS Non-Repetitive Peak on-state Current (t=10ms) Non-Repetitive Peak on-state Current (t=8.3ms) Circuit Fusing Considerations (t = 10ms) ITSM 8 A 9 2 It 0.32 A 2s dIT/dt 50 A/us IGM 1 A Peak Gate Voltage VGM 5 Peak Gate Voltage ─ Reverse VGRM 5 Peak Gate Power ─ Forward PGM 2 PGF(AV) 0.1 Thermal Resistance Junction to Ambient RthJA 150 Thermal Resistance Junction to Case RthJC 60 Repetitive Rate of rise of on-state Current after Triggering Peak Gate Current Average Gate Power ─ Forward Junction Temperature Storage Temperature Range TJ 125 Tstg -40 to 150 V W K/W ℃ www.kexin.com.cn 1 Thyristor SMD Type SCR Thyristor BT169 (KT169) ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) Parameter Symbol Peak Repetitive Forward and Reverse Blocking Voltages Test Conditions VDRM VRRM IDRM=IRRM50uA Typ. Max 400 ID,IR VDRM=VRRM(max);Tj=125℃; RGK=1kΩ 0.1 On-state Voltage VTM IT=1A 1.5 Gate Trigger Voltage VGT Gate Trigger Current (Continuous dc) IGT VD=12V, IT=10mA VD= VDRM(max), IT=10mA; Tj=125℃ 0.8 V 200 uA Latching Current IL VD=12V, IGT=0.5mA; RGK=1kΩ 6 Holding Current IH VD=12V, IGT=0.5mA; RGK=1kΩ 5 dVD/dt VDM=67% VDRM(max); Tj=125 ℃ exponential waveform; RGK=1kΩ 25 Gate Controlled turn-on time tgt ITM=2A; VD=VDRM(max),G=10mA; dIG/dt=0.1A/us 2 Circuit Commutated turn-off time tq VD=67% VDRM(max); Tj=125℃, TM=1.6A; VR=35V; dITM/dt=30A/us,dVD/dt=2V/us; RGK=1kΩ Type BT169-400 BT169-400A BT169-400B Range 0-200 10-30 30-60 Marking BT/C39 BT/C35 BT/C36 www.kexin.com.cn mA 0.2 VD=12V, IT=10mA ■ Classification of IGT (uA) Unit V Off-state Leakage Current Critical Rate of rise of off-state Voltage 2 Min mA V/us us 100 Thyristor SMD Type SCR Thyristor BT169 (KT169) ■ Typical Characterisitics Tc(max) / 。 C Ptot / W 0.8 conduction angle degrees 30 60 90 120 180 0.7 0.6 0.5 0.4 form factor a 4 2.8 2.2 1.9 1.57 a=1.57 77 83 1.9 95 101 4 107 0.2 113 0.1 119 0 0.1 0.2 0.3 0.4 IF(AV) / A 0.5 0.6 0.7 125 FIG.1 Maximum on-state dissipation, Ptot , versus average on-state current, I T(AV) , where a=form factor=I T(RMS) / IT(AV) 1000 IT ITSM / A ITSM 8 89 2.2 2.8 0.3 0 ITSM / A 10 T time Tj initial=25• • C max 6 4 2 0 1 10 100 1000 Number of half cycles at 50Hz FIG.4 Maximnum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50Hz. 2.0 IT(RMS) / A 1.5 100 IT 10 1 1.0 ITSM T 0.5 time Tj initial=25 。C max 100µs 10µs T/s 1ms 10ms FIG.2 Maximum permissible non-repetitive peak on-state current ITSM ,versus pulse width tp,for sinusoidal currents, t p <=10ms. IT(RMS) / A 1.0 83。C 0.8 0.1 1.0 10 surge duration / s FIG.5 Maximum permissible repetitive rms on-state current I T(RMS) , versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83 。 C VGT(Tj) 1.6 。 VGT(25 C) 1.4 1.2 0.6 1.0 0.4 0.8 0.2 0 -50 0 0.01 0.6 0 50 100 150 Tlead / C FIG.3 Maximum permissible rms current I T(RMS) , versus lead temperature, Tlead 0.4 -50 0 50 100 150 Tj / C FIG.6 Normalised gate trigger voltage V GT (Tj) /V GT( 25。C), versus junction temperature Tj www.kexin.com.cn 3 Thyristor SMD Type SCR Thyristor BT169 (KT169) ■ Typical Characterisitics IGT(Tj) 3.0 VGT(25 。C) 2.5 typ max 2 1.0 0.5 1 0 50 Tj / C 100 0 150 。 FIG.7 Normalised gate trigger current IGT(Tj)/IGT(25 C), versus junction temperature Tj 3.0 。 。CC - - - Vo=1.067V Rs=0.187 Ω 3 1.5 -50 Tj=125 Tj= 25 4 2.0 0 IT / A 5 IL(Tj) IL(25 。C) 0 1.5 2.0 FIG.10 Typical and maximum on-state characteristic. Zth j-lead (K/W) 100 2.5 1.0 VT / V 0.5 10 2.0 1 1.5 1.0 0.5 0 -50 0 50 Tj / C 100 150 FIG.8 Normalised latching current I L(Tj) /IL(25。C),versus junction temperature Tj, R GK= 1KΩ 3.0 PD 0.1 IH(Tj) 。 IH(25 C) 0.01 10us 0.1ms 1ms tp t 10ms tp / s 0.1s 1s 10s FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp. 1000 dVD/dt(V/us) 2.5 2.0 100 RGK=1KΩ 1.5 1.0 10 0.5 0 50 100 150 Tj / C FIG.9 Normalised holding current I H (Tj)/IH(25 。C),versus junction temperature Tj, R GK=1KΩ 4 -50 0 www.kexin.com.cn 1 0 0 Tj / C 50 150 FIG.12 Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.